{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,3]],"date-time":"2026-04-03T05:32:43Z","timestamp":1775194363728,"version":"3.50.1"},"reference-count":83,"publisher":"MDPI AG","issue":"10","license":[{"start":{"date-parts":[[2010,9,28]],"date-time":"2010-09-28T00:00:00Z","timestamp":1285632000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe\/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.<\/jats:p>","DOI":"10.3390\/s101008797","type":"journal-article","created":{"date-parts":[[2010,9,28]],"date-time":"2010-09-28T09:07:13Z","timestamp":1285664833000},"page":"8797-8826","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":170,"title":["Metal-Insulator-Semiconductor Photodetectors"],"prefix":"10.3390","volume":"10","author":[{"given":"Chu-Hsuan","family":"Lin","sequence":"first","affiliation":[{"name":"Institute of Opto-Electronic Engineering, National Dong Hwa University, Hualien 97401, Taiwan"}]},{"given":"Chee Wee","family":"Liu","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, Graduate Institute of Electronics Engineering, and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan"}]}],"member":"1968","published-online":{"date-parts":[[2010,9,28]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"R33","DOI":"10.1088\/0268-1242\/18\/4\/201","article-title":"Wide-Bandgap Semiconductor Ultraviolet Photodetectors","volume":"18","author":"Monroy","year":"2003","journal-title":"Semicond. 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