{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T22:43:06Z","timestamp":1760222586377,"version":"build-2065373602"},"reference-count":16,"publisher":"MDPI AG","issue":"10","license":[{"start":{"date-parts":[[2010,10,12]],"date-time":"2010-10-12T00:00:00Z","timestamp":1286841600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>In this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET) is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO film. The Si NWs-FET is connected electrically to the photodiode in order to enhance the latter\u2019s photocurrent efficiency by adjusting the gate voltage of the FET. When the FET is switched on by biasing a gate voltage of \u22129 V, the photocurrent efficiency of the photodiode is three times higher than that when the FET is switched off by biasing a gate voltage of 0 V.<\/jats:p>","DOI":"10.3390\/s101009118","type":"journal-article","created":{"date-parts":[[2010,10,13]],"date-time":"2010-10-13T11:10:49Z","timestamp":1286968249000},"page":"9118-9126","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate"],"prefix":"10.3390","volume":"10","author":[{"given":"Kiyeol","family":"Kwak","sequence":"first","affiliation":[{"name":"Department of Electrical Engineering, Korea University, Seoul 136-713, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kyoungah","family":"Cho","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, Korea University, Seoul 136-713, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Sangsig","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, Korea University, Seoul 136-713, Korea"},{"name":"Department of Nano Semiconductor Engineering, Korea University, Seoul 136-713, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2010,10,12]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"030210:1","DOI":"10.1143\/JJAP.49.030210","article-title":"Optoelectronic Characteristics of HgSe Nanoparticle Film Spin-Coated on Flexible Plastic Substrates","volume":"49","author":"Jang","year":"2010","journal-title":"Jpn J Appl Phys"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"246","DOI":"10.1016\/j.matchemphys.2010.02.043","article-title":"Sintering Effect on the Optoelectronic Characteristics of HgSe Nanoparticle Film on Plastic Substrates","volume":"122","author":"Byun","year":"2010","journal-title":"Mater. 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