{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,29]],"date-time":"2025-11-29T16:13:11Z","timestamp":1764432791726,"version":"build-2065373602"},"reference-count":18,"publisher":"MDPI AG","issue":"5","license":[{"start":{"date-parts":[[2011,4,28]],"date-time":"2011-04-28T00:00:00Z","timestamp":1303948800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>A vapor cooling condensation system was used to deposit high quality intrinsic ZnO thin films and intrinsic ZnO nanorods as the sensing membrane of extended-gate field-effect-transistor (EGFET) glucose biosensors. The sensing sensitivity of the resulting glucose biosensors operated in the linear range was 13.4 \u03bcA mM\u22121 cm\u22122. To improve the sensing sensitivity of the ZnO-based glucose biosensors, the photoelectrochemical method was utilized to passivate the sidewall surfaces of the ZnO nanorods. The sensing sensitivity of the ZnO-based glucose biosensors with passivated ZnO nanorods was significantly improved to 20.33 \u03bcA mM\u22121 cm\u22122 under the same measurement conditions. The experimental results verified that the sensing sensitivity improvement was the result of the mitigation of the Fermi level pinning effect caused by the dangling bonds and the surface states induced on the sidewall surface of the ZnO nanorods.<\/jats:p>","DOI":"10.3390\/s110504648","type":"journal-article","created":{"date-parts":[[2011,4,28]],"date-time":"2011-04-28T10:20:20Z","timestamp":1303986020000},"page":"4648-4655","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":61,"title":["Investigation of a Photoelectrochemical Passivated ZnO-Based Glucose Biosensor"],"prefix":"10.3390","volume":"11","author":[{"given":"Ching-Ting","family":"Lee","sequence":"first","affiliation":[{"name":"Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 701, Tainan, Taiwan"}]},{"given":"Ying-Shuo","family":"Chiu","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 701, Tainan, Taiwan"}]},{"given":"Shu-Ching","family":"Ho","sequence":"additional","affiliation":[{"name":"Microsystems Technology Center, Industrial Technology Research Institute, Tainan, Taiwan"}]},{"given":"Yao-Jung","family":"Lee","sequence":"additional","affiliation":[{"name":"Microsystems Technology Center, Industrial Technology Research Institute, Tainan, Taiwan"}]}],"member":"1968","published-online":{"date-parts":[[2011,4,28]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"19","DOI":"10.1016\/S0254-0584(99)00184-4","article-title":"Study on extended gate field effect transistor with tin oxide sensing membrane","volume":"63","author":"Chi","year":"2000","journal-title":"Mater. 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