{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,17]],"date-time":"2026-03-17T08:58:17Z","timestamp":1773737897086,"version":"3.50.1"},"reference-count":42,"publisher":"MDPI AG","issue":"8","license":[{"start":{"date-parts":[[2011,8,18]],"date-time":"2011-08-18T00:00:00Z","timestamp":1313625600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>A Schottky diode has been designed and fabricated on an n-AlGaAs\/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni\/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V\/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device\u2019s good potential as a rectenna device with further improvement. The fabricated n-AlGaAs\/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.<\/jats:p>","DOI":"10.3390\/s110808127","type":"journal-article","created":{"date-parts":[[2011,8,18]],"date-time":"2011-08-18T11:29:37Z","timestamp":1313666977000},"page":"8127-8142","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":15,"title":["Dual-Functional On-Chip AlGaAs\/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications"],"prefix":"10.3390","volume":"11","author":[{"given":"Abdul Manaf","family":"Hashim","sequence":"first","affiliation":[{"name":"Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia"},{"name":"Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia"}]},{"given":"Farahiyah","family":"Mustafa","sequence":"additional","affiliation":[{"name":"Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia"}]},{"given":"Shaharin Fadzli Abd","family":"Rahman","sequence":"additional","affiliation":[{"name":"Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia"}]},{"given":"Abdul Rahim Abdul","family":"Rahman","sequence":"additional","affiliation":[{"name":"Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia"}]}],"member":"1968","published-online":{"date-parts":[[2011,8,18]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"913","DOI":"10.1016\/j.techfore.2005.06.001","article-title":"The growth dynamics of the internet and the long wave theory","volume":"72","author":"Devezas","year":"2005","journal-title":"Technol. 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