{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,23]],"date-time":"2026-03-23T11:46:27Z","timestamp":1774266387576,"version":"3.50.1"},"reference-count":17,"publisher":"MDPI AG","issue":"10","license":[{"start":{"date-parts":[[2011,9,27]],"date-time":"2011-09-27T00:00:00Z","timestamp":1317081600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Nanocrystalline SnOx (x = 1\u20132) thin films were prepared on glass substrates by a simple chemical bath deposition method. Triethanolamine was used as complexing agent to decrease time and temperature of deposition and shift the pH of the solution to the noncorrosive region. The films were characterized for composition, surface morphology, structure and optical properties. X-ray diffraction analysis confirms that SnOx thin films consist of a polycrystalline structure with an average grain size of 36 nm. Atomic force microscopy studies show a uniform grain distribution without pinholes. The elemental composition was evaluated by energy dispersive X-ray spectroscopy. The average O\/Sn atomic percentage ratio is 1.72. Band gap energy and optical transition were determined from optical absorbance data. The film was found to exhibit direct and indirect transitions in the visible spectrum with band gap values of about 3.9 and 3.7 eV, respectively. The optical transmittance in the visible region is 82%. The SnOx nanocrystals exhibit an ultraviolet emission band centered at 392 nm in the vicinity of the band edge, which is attributed to the well-known exciton transition in SnOx. Photosensitivity was detected in the positive region under illumination with white light.<\/jats:p>","DOI":"10.3390\/s111009207","type":"journal-article","created":{"date-parts":[[2011,9,27]],"date-time":"2011-09-27T20:09:10Z","timestamp":1317154150000},"page":"9207-9216","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":26,"title":["Synthesis of Nanocrystalline SnOx (x = 1\u20132) Thin Film Using a Chemical Bath Deposition Method with Improved Deposition Time, Temperature and pH"],"prefix":"10.3390","volume":"11","author":[{"given":"Saeideh","family":"Ebrahimiasl","sequence":"first","affiliation":[{"name":"Institute of Advanced Technology, University Putra Malaysia, 43400, UPM Serdang, Malaysia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wan Md. Zin Wan","family":"Yunus","sequence":"additional","affiliation":[{"name":"Department of Chemistry, University Putra Malaysia, 43400, UPM Serdang, Malaysia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Anuar","family":"Kassim","sequence":"additional","affiliation":[{"name":"Department of Chemistry, University Putra Malaysia, 43400, UPM Serdang, Malaysia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zulkarnain","family":"Zainal","sequence":"additional","affiliation":[{"name":"Institute of Advanced Technology, University Putra Malaysia, 43400, UPM Serdang, Malaysia"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2011,9,27]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"350","DOI":"10.1063\/1.1337640","article-title":"Electrical properties of Ta-doped SnO2 thin films prepared by chemical-vapor deposition method","volume":"78","author":"Lee","year":"2001","journal-title":"Appl. Phys. Lett"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"1688","DOI":"10.1063\/1.370948","article-title":"Characterization of treated indium-tin-oxide surfaces used in electroluminescent devices","volume":"86","author":"Mason","year":"1999","journal-title":"J. Appl. Phys"},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"1825","DOI":"10.1063\/1.1685015","article-title":"Transparent conducting films of Antimony doped tin oxide on glass","volume":"42","author":"Peaker","year":"1971","journal-title":"Rev. Sci. Instrum"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"29","DOI":"10.1016\/0250-6874(84)87004-3","article-title":"The tin oxide gas sensor and its application","volume":"5","author":"Watson","year":"1984","journal-title":"Sens. Actuat"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"R813","DOI":"10.1088\/0953-8984\/15\/20\/201","article-title":"Understanding the fundamental principles of metal oxide based gas sensors; the example of CO sensing with SnO2 sensors in the presence of humidity","volume":"15","author":"Barsan","year":"2003","journal-title":"J. Phys. Condens. Matter"},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"113","DOI":"10.1016\/S0378-7753(02)00531-1","article-title":"Nanorystalline tin oxides and nickel oxide film anodes for Li-ion batteries","volume":"114","author":"Nuli","year":"2003","journal-title":"J. Power Sources"},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"9","DOI":"10.1016\/S0257-8972(01)01618-8","article-title":"Chemical vapor deposition of SnO2 coatings on Ti plates for the preparation of electrocatalytic anodes","volume":"151\u2013152","author":"Duverneuil","year":"2002","journal-title":"J Surf Coat Technol"},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"8587","DOI":"10.1016\/j.tsf.2008.06.016","article-title":"Preparation and characterization of nanocrystalline tin oxide thin films deposited at room temperature","volume":"516","author":"Deshpande","year":"2008","journal-title":"J. Thin Solid Films"},{"key":"ref_9","doi-asserted-by":"crossref","unstructured":"Hodes, G, and Dekker, M (2002). Chemical Solution Deposition of Semiconductor Films, CRC Press.","DOI":"10.1201\/9780203909096"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"549","DOI":"10.1016\/j.cap.2007.10.001","article-title":"Controlled repeated chemical growth of SnO films for dye-sensitized solar cells","volume":"8","author":"Mane","year":"2008","journal-title":"Curr. Appl. Phys"},{"key":"ref_11","first-page":"1","article-title":"Chemical bath deposition of tin selenide thin films","volume":"9849","author":"Salem","year":"2003","journal-title":"Mater. Chem. Phys"},{"key":"ref_12","first-page":"1770","article-title":"Improved chemical deposition and thermal emittance of tin (iv) oxide (SnO2) thin films for photothermal conversion of solar energy and possible applications","volume":"5","author":"Igbinovia","year":"2010","journal-title":"Int. J. Phys. Sci"},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"850","DOI":"10.1016\/j.tsf.2009.07.102","article-title":"Room-temperature synthesis of tin oxide nano-electrodes in aqueous solutions","volume":"518","author":"Masuda","year":"2009","journal-title":"Thin Solid Films"},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"439","DOI":"10.1021\/jp807753t","article-title":"Energetic and electronic structure analysis of intrinsic defects in SnO2","volume":"113","author":"Godinho","year":"2008","journal-title":"J. Phys. Chem. C"},{"key":"ref_15","doi-asserted-by":"crossref","unstructured":"\u00d6zgur, \u00dc, Alivov, YI, Liu, C, Teke, A, Reshchikov, MA, Do\u011fan, S, Avrutin, V, Cho, S-J, and Morko\u00e7, H (2005). A comprehensive review of ZnO materials and devices. J Appl Phys.","DOI":"10.1063\/1.1992666"},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"3358","DOI":"10.1063\/1.1723696","article-title":"Low-temperature orientation-selective growth and ultraviolet emission of single-crystal ZnO nanowires","volume":"84","author":"Kim","year":"2004","journal-title":"J. Appl. Phys. Lett"},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"2739","DOI":"10.1063\/1.1697633","article-title":"Microcavity lasing behavior of oriented hexagonal ZnO nanowhiskers grown by hydrothermal","volume":"84","author":"Qiu","year":"2004","journal-title":"J. Appl. Phys. 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