{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T04:38:38Z","timestamp":1760243918575,"version":"build-2065373602"},"reference-count":38,"publisher":"MDPI AG","issue":"11","license":[{"start":{"date-parts":[[2011,11,8]],"date-time":"2011-11-08T00:00:00Z","timestamp":1320710400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>In recent years, epitaxial growth of self-assembled quantum dots has offered a way to incorporate new properties into existing solid state devices. Although the droplet heteroepitaxy method is relatively complex, it is quite relaxed with respect to the material combinations that can be used. This offers great flexibility in the systems that can be achieved. In this paper we review the structure and composition of a number of quantum dot systems grown by the droplet heteroepitaxy method, emphasizing the insights that these experiments provide with respect to the growth process. Detailed structural and composition information has been obtained using surface X-ray diffraction analyzed by the COBRA phase retrieval method. A number of interesting phenomena have been observed: penetration of the dots into the substrate (\u201cnano-drilling\u201d) is often encountered; interdiffusion and intermixing already start when the group III droplets are deposited, and structure and composition may be very different from the one initially intended.<\/jats:p>","DOI":"10.3390\/s111110624","type":"journal-article","created":{"date-parts":[[2011,11,8]],"date-time":"2011-11-08T11:36:19Z","timestamp":1320752179000},"page":"10624-10637","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":4,"title":["Surface X-Ray Diffraction Results on the III-V Droplet Heteroepitaxy Growth Process for Quantum Dots: Recent Understanding and Open Questions"],"prefix":"10.3390","volume":"11","author":[{"given":"Eyal","family":"Cohen","sequence":"first","affiliation":[{"name":"Applied Physics Department, The Hebrew University, Jerusalem 91904, Israel"}]},{"given":"Naomi","family":"Elfassy","sequence":"additional","affiliation":[{"name":"Applied Physics Department, The Hebrew University, Jerusalem 91904, Israel"}]},{"given":"Guy","family":"Koplovitz","sequence":"additional","affiliation":[{"name":"Applied Physics Department, The Hebrew University, Jerusalem 91904, Israel"}]},{"given":"Shira","family":"Yochelis","sequence":"additional","affiliation":[{"name":"Applied Physics Department, The Hebrew University, Jerusalem 91904, Israel"}]},{"given":"Sergey","family":"Shusterman","sequence":"additional","affiliation":[{"name":"Solid State Physics, Electro-optics Division, Soreq NRC, Yavne 81800, Israel"}]},{"given":"Divine P.","family":"Kumah","sequence":"additional","affiliation":[{"name":"Applied Physics Program, University of Michigan, 1011 North University Avenue, Ann Arbor, MI 48109, USA"}]},{"given":"Yizhak","family":"Yacoby","sequence":"additional","affiliation":[{"name":"Racah Institue of Physics, The Hebrew University, Jerusalem 91904, Israel"}]},{"given":"Roy","family":"Clarke","sequence":"additional","affiliation":[{"name":"Applied Physics Program, University of Michigan, 1011 North University Avenue, Ann Arbor, MI 48109, USA"}]},{"given":"Yossi","family":"Paltiel","sequence":"additional","affiliation":[{"name":"Applied Physics Department, The Hebrew University, Jerusalem 91904, Israel"}]}],"member":"1968","published-online":{"date-parts":[[2011,11,8]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"1506","DOI":"10.1126\/science.1068153","article-title":"Efficient near-infrared polymer nanocrystat light-emitting diodes","volume":"295","author":"Tessler","year":"2002","journal-title":"Science"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"1350","DOI":"10.1126\/science.274.5291.1350","article-title":"Red-emitting semiconductor quantum dot lasers","volume":"274","author":"Fafard","year":"1996","journal-title":"Science"},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"5647","DOI":"10.1103\/PhysRevLett.85.5647","article-title":"Quantum information processing with semiconductor macroatoms","volume":"85","author":"Biolatti","year":"2000","journal-title":"Phys. Rev. Lett"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"1043","DOI":"10.1038\/nature07129","article-title":"Coherent manipulation of single spins in semiconductors","volume":"453","author":"Hanson","year":"2008","journal-title":"Nature"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"2268","DOI":"10.1063\/1.1339210","article-title":"Quantum dot solar cells","volume":"89","author":"Aroutiounian","year":"2001","journal-title":"J. Appl. Phys"},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"338","DOI":"10.1038\/35104607","article-title":"Photoelectrochemical cells","volume":"414","author":"Gratzel","year":"2001","journal-title":"Nature"},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"2385","DOI":"10.1021\/ja056494n","article-title":"Quantum dot solar cells. Harvesting light energy with CdSe nanocrystals molecularly linked to mesoscopic TiO2 films","volume":"128","author":"Robel","year":"2006","journal-title":"J. Am. Chem. Soc"},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"963","DOI":"10.1063\/1.122053","article-title":"Growth and characterization of InGaAs\/InGaP quantum dots for midinfrared photoconductive detector","volume":"73","author":"Kim","year":"1998","journal-title":"Appl. Phys. Lett"},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"131112:1","DOI":"10.1063\/1.2719160","article-title":"High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature","volume":"90","author":"Lim","year":"2007","journal-title":"Appl. Phys. Lett"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"335","DOI":"10.1016\/S0370-1573(02)00009-1","article-title":"Self-organization of nanostructures in semiconductor heteroepitaxy","volume":"365","author":"Teichert","year":"2002","journal-title":"Phys. Rep"},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"725","DOI":"10.1103\/RevModPhys.76.725","article-title":"Structural properties of self-organized semiconductor nanostructures","volume":"76","author":"Stangl","year":"2004","journal-title":"Rev. Mod. Phys"},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"5678","DOI":"10.1103\/PhysRevB.59.5678","article-title":"Electronic structures of [110]-faceted self-assembled pyramidal InAs\/GaAs quantum dots","volume":"59","author":"Wang","year":"1999","journal-title":"Phys. Rev. B"},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"1708","DOI":"10.1063\/1.1504162","article-title":"Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy","volume":"81","author":"Bruls","year":"2002","journal-title":"Appl. Phys. Lett"},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"11969","DOI":"10.1103\/PhysRevB.52.11969","article-title":"InAs\/GaAs pyramidal quantum dots\u2014Strain distribution, optical phonons, and electronic-structure","volume":"52","author":"Grundmann","year":"1995","journal-title":"Phys. Rev. B"},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"15981","DOI":"10.1103\/PhysRevB.58.R15981","article-title":"Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying","volume":"58","author":"Joyce","year":"1998","journal-title":"Phys. Rev. B"},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"688","DOI":"10.1016\/0022-0248(91)91064-H","article-title":"New MBE growth method for InSb quantum-well boxes","volume":"111","author":"Koguchi","year":"1991","journal-title":"J. Cryst. Growth"},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"1198","DOI":"10.1016\/S0022-0248(99)00034-2","article-title":"Ga-droplet-induced formation of GaAs nano-islands by chemical beam epitaxy","volume":"201","author":"Ro","year":"1999","journal-title":"J. Cryst. Growth"},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"2346","DOI":"10.1063\/1.1793343","article-title":"Droplet heteroepitaxy of GaN quantum dots by metal-organic chemical vapor deposition","volume":"85","author":"Gherasimova","year":"2004","journal-title":"Appl. Phys. Lett"},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"L1009","DOI":"10.1143\/JJAP.38.L1009","article-title":"New self-organized growth method for InGaAs quantum dots on GaAs(001) using droplet epitaxy","volume":"38","author":"Mano","year":"1999","journal-title":"Jpn. J. Appl. Phys. 2"},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"4580","DOI":"10.1143\/JJAP.39.4580","article-title":"InAs quantum dots growth by modified droplet epitaxy using sulfur termination","volume":"39","author":"Mano","year":"2000","journal-title":"Jpn. J. Appl. Phys. 1"},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"229","DOI":"10.1016\/j.infrared.2009.05.004","article-title":"Narrow gap nano-dots growth by droplets heteroepitaxial mode","volume":"52","author":"Shusterman","year":"2009","journal-title":"Infrared Phys. Technol"},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"425","DOI":"10.1021\/nl048192+","article-title":"Self-assembly of concentric quantum double rings","volume":"5","author":"Mano","year":"2005","journal-title":"Nano Lett"},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"117","DOI":"10.1016\/j.physrep.2010.12.001","article-title":"Compositional mapping of semiconductor quantum dots and rings","volume":"500","author":"Biasiol","year":"2011","journal-title":"Phys. Rep"},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"243115:1","DOI":"10.1063\/1.3599063","article-title":"Structure of droplet-epitaxy-grown InAs\/GaAs quantum dots","volume":"98","author":"Cohen","year":"2011","journal-title":"Appl. Phys. Lett"},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"835","DOI":"10.1038\/nnano.2009.271","article-title":"Atomic-scale mapping of quantum dots formed by droplet epitaxy","volume":"4","author":"Kumah","year":"2009","journal-title":"Nat. Nanotechnol"},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"363","DOI":"10.1016\/j.jcrysgro.2006.03.042","article-title":"High-density nanometer-scale InSb dots formation using droplets heteroepitaxial growth by MOVPE","volume":"291","author":"Shusterman","year":"2006","journal-title":"J. Cryst. Growth"},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"3929","DOI":"10.1088\/0953-8984\/12\/17\/301","article-title":"Direct structure determination of systems with two-dimensional periodicity","volume":"12","author":"Yacoby","year":"2000","journal-title":"J. Phys.Condens. Mat"},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"99","DOI":"10.1038\/nmat735","article-title":"Direct determination of epitaxial interface structure in Gd2O3 passivation of GaAs","volume":"1","author":"Yacoby","year":"2002","journal-title":"Nat. Mater"},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"081910:1","DOI":"10.1063\/1.2975835","article-title":"Resonant coherent Bragg rod analysis of strained epitaxial heterostructures","volume":"93","author":"Kumah","year":"2008","journal-title":"Appl. Phys. Lett"},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"021903:1","DOI":"10.1063\/1.3535984","article-title":"Correlating structure, strain, and morphology of self-assembled InAs quantum dots on GaAs","volume":"98","author":"Kumah","year":"2011","journal-title":"Appl. Phys. Lett"},{"key":"ref_31","first-page":"113120:1","article-title":"Nanoholes fabricated by self-assembled gallium nanodrill on GaAs(100)","volume":"90","author":"Wang","year":"2007","journal-title":"Appl. Phys. Lett"},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"3981","DOI":"10.1063\/1.1751221","article-title":"GaInAs\/GaAs quantum-well growth assisted by sb surfactant: Toward 1.3 \u03bcm emission","volume":"84","author":"Harmand","year":"2004","journal-title":"Appl. Phys. Lett"},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"2541","DOI":"10.1063\/1.121412","article-title":"Improvement of Ge self-organized quantum dots by use of Sb surfactant","volume":"72","author":"Peng","year":"1998","journal-title":"Appl. Phys. Lett"},{"key":"ref_34","doi-asserted-by":"crossref","first-page":"66003:1","DOI":"10.1209\/0295-5075\/88\/66003","article-title":"Two-dimensional imaging of III-V quantum dots confinement potential","volume":"88","author":"Shusterman","year":"2009","journal-title":"Europhys. Lett"},{"key":"ref_35","first-page":"205424:1","article-title":"Stresses and first-order dislocation energetics in equilibrium Stranski-Krastanow islands","volume":"6320","author":"Spencer","year":"2001","journal-title":"Phys. Rev. B"},{"key":"ref_36","doi-asserted-by":"crossref","first-page":"3717","DOI":"10.1063\/1.1811796","article-title":"Composition profiling of InAs\/GaAs quantum dots","volume":"85","author":"Patriarche","year":"2004","journal-title":"Appl. Phys. Lett"},{"key":"ref_37","doi-asserted-by":"crossref","first-page":"2089","DOI":"10.1021\/nl071031w","article-title":"Nanoscale mapping of strain and composition in quantum dots using kelvin probe force microscopy","volume":"7","author":"Shusterman","year":"2007","journal-title":"Nano Lett"},{"key":"ref_38","doi-asserted-by":"crossref","first-page":"485","DOI":"10.1088\/0957-4484\/12\/4\/321","article-title":"Electrostatic force microscopy: Principles and some applications to semiconductors","volume":"12","author":"Girard","year":"2001","journal-title":"Nanotechnology"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/11\/11\/10624\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T21:57:57Z","timestamp":1760219877000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/11\/11\/10624"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2011,11,8]]},"references-count":38,"journal-issue":{"issue":"11","published-online":{"date-parts":[[2011,11]]}},"alternative-id":["s111110624"],"URL":"https:\/\/doi.org\/10.3390\/s111110624","relation":{},"ISSN":["1424-8220"],"issn-type":[{"type":"electronic","value":"1424-8220"}],"subject":[],"published":{"date-parts":[[2011,11,8]]}}}