{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,19]],"date-time":"2025-10-19T18:22:00Z","timestamp":1760898120136,"version":"build-2065373602"},"reference-count":22,"publisher":"MDPI AG","issue":"2","license":[{"start":{"date-parts":[[2012,1,31]],"date-time":"2012-01-31T00:00:00Z","timestamp":1327968000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>To increase the responsivity is one of the vital issues for a photodetector. By employing ZnO as a representative material of ultraviolet photodetectors and Si as a representative material of visible photodetectors, an impact ionization process, in which additional carriers can be generated in an insulating layer at a relatively large electric field, has been employed to increase the responsivity of a semiconductor photodetector. It is found that the responsivity of the photodetectors can be enhanced by tens of times via this impact ionization process. The results reported in this paper provide a general route to enhance the responsivity of a photodetector, thus may represent a step towards high-performance photodetectors.<\/jats:p>","DOI":"10.3390\/s120201280","type":"journal-article","created":{"date-parts":[[2012,1,31]],"date-time":"2012-01-31T11:06:27Z","timestamp":1328007987000},"page":"1280-1287","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":24,"title":["Enhanced Responsivity of Photodetectors Realized via Impact Ionization"],"prefix":"10.3390","volume":"12","author":[{"given":"Ji","family":"Yu","sequence":"first","affiliation":[{"name":"State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China"},{"name":"Graduate University of the Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chong-Xin","family":"Shan","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Qian","family":"Qiao","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China"},{"name":"Graduate University of the Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiu-Hua","family":"Xie","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China"},{"name":"Graduate University of the Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shuang-Peng","family":"Wang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhen-Zhong","family":"Zhang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"De-Zhen","family":"Shen","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2012,1,31]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"180","DOI":"10.1038\/nature04855","article-title":"Ultrasensitive Solution-Cast Quantum Dot Photodetectors","volume":"442","author":"Konstantatos","year":"2006","journal-title":"Nature"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"8604","DOI":"10.3390\/s100908604","article-title":"ZnO-Based Ultraviolet Photodetectors","volume":"10","author":"Liu","year":"2010","journal-title":"Sensors"},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"1665","DOI":"10.1126\/science.1176706","article-title":"High-Detectivity Polymer Photodetectors with Spectral Response from 300 nm to 1450 nm","volume":"325","author":"Gong","year":"2009","journal-title":"Science"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"8797","DOI":"10.3390\/s101008797","article-title":"Metal-Insulator-Semiconductor Photodetectors","volume":"10","author":"Liu","year":"2010","journal-title":"Sensors"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"6504","DOI":"10.3390\/s90806504","article-title":"A Comprehensive Review of One-Dimensional Metal-Oxide Nanostructure Photodetectors","volume":"9","author":"Zhai","year":"2009","journal-title":"Sensors"},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"3979","DOI":"10.1002\/adma.200602670","article-title":"Plastic Near-Infrared Photodetectors Utilizing Low Band Gap Polymer","volume":"19","author":"Yao","year":"2007","journal-title":"Adv. Mater"},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"2489","DOI":"10.1002\/adma.200401622","article-title":"Highly Efficient Visible-Blind Organic Ultraviolet Photodetectors","volume":"17","author":"Lin","year":"2005","journal-title":"Adv. Mater"},{"key":"ref_8","doi-asserted-by":"crossref","unstructured":"Sze, S.M., and Ng, K.K. (2007). Physics of Semiconductor Devices, Wiley. [3rd ed.].","DOI":"10.1002\/0470068329"},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"167","DOI":"10.1002\/adfm.201001328","article-title":"Organic and Inorganic Blocking Layers for Solution-Processed Colloidal PbSe Nanocrystal Infrared Photodetectors","volume":"21","author":"Sarasqueta","year":"2011","journal-title":"Adv. Funct. Mater"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"251102:1","DOI":"10.1063\/1.3527974","article-title":"High Responsivity Ultraviolet Photodetector Realized via a Carrier-Trapping Process","volume":"97","author":"Liu","year":"2010","journal-title":"Appl. Phys. Lett"},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"1877","DOI":"10.1002\/adma.200903623","article-title":"Low-Threshold Electrically Pumped Random Lasers","volume":"22","author":"Zhu","year":"2010","journal-title":"Adv. Mater"},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"2848","DOI":"10.1039\/c0jm04233a","article-title":"Low-Threshold Electrically Pumped Ultraviolet Laser Diode","volume":"21","author":"Zhu","year":"2011","journal-title":"J. Mater. Chem"},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"251109:1","DOI":"10.1063\/1.2826543","article-title":"Electrically Pumped ZnO Film Ultraviolet Random Lasers on Silicon Substrate","volume":"91","author":"Ma","year":"2007","journal-title":"Appl. Phys. Lett"},{"key":"ref_14","first-page":"111112:1","article-title":"Fairly Pure Ultraviolet Electroluminescence from ZnO-Based Light-Emitting Devices","volume":"89","author":"Chen","year":"2006","journal-title":"Appl. Phys. Lett"},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"251115:1","DOI":"10.1063\/1.2751106","article-title":"347 nm Ultraviolet Electroluminescence from MgxZn1\u2212xO-Based Light Emitting Devices","volume":"90","author":"Chen","year":"2007","journal-title":"Appl. Phys. Lett"},{"key":"ref_16","first-page":"045102:1","article-title":"Metal-Insulator-Semiconductor-Insulator-Metal Structured Titanium Dioxide Ultraviolet Photodetector","volume":"43","author":"Wang","year":"2010","journal-title":"J. Phys. D: Appl. Phys"},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"H415","DOI":"10.1149\/1.3614415","article-title":"Photocurrent Enhancement in Nanocrystalline-ZnO\/Si Heterojunction Metal-Semiconductor-Metal Photodetectors","volume":"14","author":"Yen","year":"2011","journal-title":"Electrochem. Solid-State Lett"},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"7169","DOI":"10.1021\/jp101083n","article-title":"Metal-Oxide-Semiconductor-Structured MgZnO Ultraviolet Photodetector with High Internal Gain","volume":"114","author":"Zhu","year":"2010","journal-title":"J. Phys. Chem. C"},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"073113:1","DOI":"10.1063\/1.2993978","article-title":"Investigation of Correlation between the Microstructure and Electrical Properties of Sol-Gel Derived ZnO Based Thin Films","volume":"104","author":"Zhu","year":"2008","journal-title":"J. Appl. Phys"},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"907","DOI":"10.1109\/TPEL.2003.810840","article-title":"An Assessment of Wide Bandgap Semiconductors for Power Devices","volume":"18","author":"Hudgins","year":"2003","journal-title":"IEEE Trans. Power Electron"},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"103502:1","DOI":"10.1063\/1.3562326","article-title":"High-Performance Metal-Semiconductor-Metal InGaN Photodetectors Using Caf2 as the Insulator","volume":"98","author":"Sang","year":"2011","journal-title":"Appl. Phys. Lett"},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"121117:1","DOI":"10.1063\/1.3567943","article-title":"Improved Performance of GaN Metal-Semiconductor-Metal Ultraviolet Detectors by Depositing SiO2 Nanoparticles on a GaN Surface","volume":"98","author":"Sun","year":"2011","journal-title":"Appl. Phys. Lett"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/12\/2\/1280\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T21:48:40Z","timestamp":1760219320000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/12\/2\/1280"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2012,1,31]]},"references-count":22,"journal-issue":{"issue":"2","published-online":{"date-parts":[[2012,2]]}},"alternative-id":["s120201280"],"URL":"https:\/\/doi.org\/10.3390\/s120201280","relation":{},"ISSN":["1424-8220"],"issn-type":[{"type":"electronic","value":"1424-8220"}],"subject":[],"published":{"date-parts":[[2012,1,31]]}}}