{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T04:34:45Z","timestamp":1760243685606,"version":"build-2065373602"},"reference-count":21,"publisher":"MDPI AG","issue":"8","license":[{"start":{"date-parts":[[2012,7,25]],"date-time":"2012-07-25T00:00:00Z","timestamp":1343174400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Modern \u201csmart\u201d CMOS sensors have penetrated into various applications, such as surveillance systems, bio-medical applications, digital cameras, cellular phones and many others. Reducing the power of these sensors continuously challenges designers. In this paper, a low power global shutter CMOS image sensor with Wide Dynamic Range (WDR) ability is presented. This sensor features several power reduction techniques, including a dual voltage supply, a selective power down, transistors with different threshold voltages, a non-rationed logic, and a low voltage static memory. A combination of all these approaches has enabled the design of the low voltage \u201csmart\u201d image sensor, which is capable of reaching a remarkable dynamic range, while consuming very low power. The proposed power-saving solutions have allowed the maintenance of the standard architecture of the sensor, reducing both the time and the cost of the design. In order to maintain the image quality, a relation between the sensor performance and power has been analyzed and a mathematical model, describing the sensor Signal to Noise Ratio (SNR) and Dynamic Range (DR) as a function of the power supplies, is proposed. The described sensor was implemented in a 0.18 um CMOS process and successfully tested in the laboratory. An SNR of 48 dB and DR of 96 dB were achieved with a power dissipation of 4.5 nW per pixel.<\/jats:p>","DOI":"10.3390\/s120810067","type":"journal-article","created":{"date-parts":[[2012,7,25]],"date-time":"2012-07-25T11:40:38Z","timestamp":1343216438000},"page":"10067-10085","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":6,"title":["Low-Voltage 96 dB Snapshot CMOS Image Sensor with 4.5 nW Power Dissipation per Pixel"],"prefix":"10.3390","volume":"12","author":[{"given":"Arthur","family":"Spivak","sequence":"first","affiliation":[{"name":"The VLSI Systems Center, LPCAS, Ben-Gurion University, P.O.B. 653, Be\u2019er-Sheva 84105, Israel"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Adam","family":"Teman","sequence":"additional","affiliation":[{"name":"The VLSI Systems Center, LPCAS, Ben-Gurion University, P.O.B. 653, Be\u2019er-Sheva 84105, Israel"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Alexander","family":"Belenky","sequence":"additional","affiliation":[{"name":"The VLSI Systems Center, LPCAS, Ben-Gurion University, P.O.B. 653, Be\u2019er-Sheva 84105, Israel"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Orly","family":"Yadid-Pecht","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, University of Calgary, Calgary, AB 13060, Canada"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Alexander","family":"Fish","sequence":"additional","affiliation":[{"name":"The VLSI Systems Center, LPCAS, Ben-Gurion University, P.O.B. 653, Be\u2019er-Sheva 84105, Israel"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2012,7,25]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Fish, A., and Yadid-Pecht, O. (2008, January 18\u201321). Low-Power Smart CMOS Image Sensors. Seattle, WA, USA.","DOI":"10.1109\/ISCAS.2008.4541691"},{"key":"ref_2","doi-asserted-by":"crossref","unstructured":"Chae, Y., Cheon, J., Lim, S., Lee, D., Kwon, M., Yoo, K., Jung, W., Lee, D.-H., Ham, S., and Han, G. (2010, January 7\u201311). A 2.1Mpixel 120frame\/s CMOS Image Sensor with Column-parallel \u0394\u03a3 ADC Architecture. San Francisco, CA, USA.","DOI":"10.1109\/ISSCC.2010.5433974"},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"759","DOI":"10.1109\/JSSC.2010.2040231","article-title":"A 0.5 V sub-microwatt CMOS image sensor with pulse-width modulation read-out","volume":"45","author":"Hanson","year":"2010","journal-title":"J. IEEE Solid-State Circuit."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"222","DOI":"10.1109\/TED.2009.2035194","article-title":"Sub-1-V CMOS image sensor using time-based readout circuit","volume":"57","author":"Cho","year":"2010","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"737","DOI":"10.1109\/JSEN.2011.2158818","article-title":"Low power, high dynamic range CMOS image sensor employing pixel-level oversampling \u03a3\u0394 analog-to-digital conversion","volume":"12","author":"Ignjatovic","year":"2012","journal-title":"IEEE Sens. J."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"103","DOI":"10.1109\/JSEN.2008.2011073","article-title":"A snapshot CMOS image sensor with extended dynamic range","volume":"9","author":"Belenky","year":"2009","journal-title":"IEEE Sens. J."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"393","DOI":"10.1109\/TED.2008.2011846","article-title":"A High-Speed CMOS image sensor with column-parallel two-step single-slope ADCs","volume":"56","author":"Lim","year":"2009","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"2586","DOI":"10.1109\/TED.2009.2030591","article-title":"A 1-mW CMOS temporal-difference AER sensor for wireless sensor networks","volume":"56","author":"Dongsoo","year":"2009","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"2044","DOI":"10.1109\/JSEN.2009.2033198","article-title":"Low-Power and wide-bandwidth cyclic ADC with capacitor and opamp reuse techniques for CMOS image sensor application","volume":"9","author":"Lin","year":"2009","journal-title":"IEEE Sens. J."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"398","DOI":"10.1109\/LED.2002.1015213","article-title":"A low-voltage CMOS Complementary Active Pixel Sensor (CAPS) fabricated using a 0.25 \u03bcm CMOS technology","volume":"23","author":"Xu","year":"2002","journal-title":"IEEE Electron. Device Lett."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"1210","DOI":"10.1109\/TCSII.2006.882858","article-title":"CMOS Image Sensors with Self-Powered Generation Capability","volume":"53","author":"Fish","year":"2006","journal-title":"IEEE Trans. Circuit. Syst-II: Express Briefs"},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"720","DOI":"10.1109\/JSEN.2011.2138128","article-title":"An 84 pW\/Frame per pixel current-mode CMOS image sensor with energy harvesting capability","volume":"12","author":"Tang","year":"2012","journal-title":"IEEE Sens. J."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"1425","DOI":"10.1109\/JSSC.2003.811984","article-title":"In-pixel autoexposure CMOS APS","volume":"38","author":"Belenky","year":"2003","journal-title":"IEEE J. Solid-State Circuit."},{"key":"ref_14","doi-asserted-by":"crossref","unstructured":"Wang, A., Calhoun, H.B., and Chandrakasan, A. (2006). Sub-Threshold Design for Ultra Low-Power Systems, Springer.","DOI":"10.1145\/1165573.1165661"},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"680","DOI":"10.1109\/JSSC.2006.891726","article-title":"A 256-kb 65-nm sub-threshold SRAM design for ultra-low-voltage operation","volume":"42","author":"Calhoun","year":"2007","journal-title":"IEEE J. Solid State Circuit."},{"key":"ref_16","doi-asserted-by":"crossref","unstructured":"Kim, T.-H., Liu, J., and Kim, C.H. (2007, January 16\u201319). An 8T Subthreshold SRAM Cell Utilizing Reverse Short Channel Effect for Write Margin and Read Performance Improvement. San Jose, CA, USA.","DOI":"10.1109\/CICC.2007.4405723"},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"141","DOI":"10.1109\/JSSC.2007.908005","article-title":"A 256 kb 65 nm 8T subthreshold SRAM employing sense-amplifier redundancy","volume":"43","author":"Verma","year":"2008","journal-title":"IEEE J. Solid-State Circuit."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"821","DOI":"10.1109\/TVLSI.2007.899239","article-title":"Utilizing Reverse Short-Channel Effect for Optimal Subthreshold Circuit Design","volume":"15","author":"Kim","year":"2007","journal-title":"IEEE Trans. Very Large Scale Integr."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"1650","DOI":"10.1109\/4.726553","article-title":"A 1.8-ns access, 550-MHz, 4.5-Mb CMOS SRAM","volume":"33","author":"Nambu","year":"1998","journal-title":"IEEE J. Solid-State Circuit."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"2446","DOI":"10.1109\/TED.2009.2030599","article-title":"Wide-Dynamic-Range CMOS image sensors-comparative performance analysis","volume":"56","author":"Spivak","year":"2009","journal-title":"IEEE Trans. Electron. Devices"},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"2561","DOI":"10.1109\/TCSI.2008.920094","article-title":"A CMOS image sensor for multi-level focal plane image decomposition","volume":"55","author":"Lin","year":"2008","journal-title":"IEEE Trans. Circuit. Syst."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/12\/8\/10067\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T21:51:27Z","timestamp":1760219487000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/12\/8\/10067"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2012,7,25]]},"references-count":21,"journal-issue":{"issue":"8","published-online":{"date-parts":[[2012,8]]}},"alternative-id":["s120810067"],"URL":"https:\/\/doi.org\/10.3390\/s120810067","relation":{},"ISSN":["1424-8220"],"issn-type":[{"type":"electronic","value":"1424-8220"}],"subject":[],"published":{"date-parts":[[2012,7,25]]}}}