{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T04:30:33Z","timestamp":1760243433692,"version":"build-2065373602"},"reference-count":14,"publisher":"MDPI AG","issue":"2","license":[{"start":{"date-parts":[[2013,2,18]],"date-time":"2013-02-18T00:00:00Z","timestamp":1361145600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Low temperature growth of GaAs (LT-GaAs) near 200 \u00b0C results in a recombination lifetime of nearly 1 ps, compared with approximately 1 ns for regular temperature ~600 \u00b0C grown GaAs (RT-GaAs), making it suitable for ultra high speed detection applications. However, LT-GaAs detectors usually suffer from low responsivity due to low carrier mobility. Here we report electro-optic sampling time response measurements of a detector that employs an AlGaAs heterojunction, a thin layer of LT-GaAs, a channel of RT-GaAs, and a vertical electric field that together facilitate collection of optically generated electrons while suppressing collection of lower mobility holes. Consequently, these devices have detection efficiency near that of RT-GaAs yet provide pulse widths nearly an order of magnitude faster\u2014~6 ps for a cathode-anode separation of 1.3 \u03bcm and ~12 ps for distances more than 3 \u03bcm.<\/jats:p>","DOI":"10.3390\/s130202475","type":"journal-article","created":{"date-parts":[[2013,2,19]],"date-time":"2013-02-19T11:11:16Z","timestamp":1361272276000},"page":"2475-2483","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":9,"title":["Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer"],"prefix":"10.3390","volume":"13","author":[{"given":"Marc","family":"Currie","sequence":"first","affiliation":[{"name":"Optical Sciences Division, U.S. Naval Research Laboratory, Washington, DC 20375, USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Pouya","family":"Dianat","sequence":"additional","affiliation":[{"name":"Electrical and Computer Engineering Department, Drexel University, Philadelphia, PA 19104, USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Anna","family":"Persano","sequence":"additional","affiliation":[{"name":"IMM-CNR, Unit of Lecce, Via Monteroni, I-73100 Lecce, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Maria","family":"Martucci","sequence":"additional","affiliation":[{"name":"IMM-CNR, Unit of Lecce, Via Monteroni, I-73100 Lecce, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Fabio","family":"Quaranta","sequence":"additional","affiliation":[{"name":"IMM-CNR, Unit of Lecce, Via Monteroni, I-73100 Lecce, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Adriano","family":"Cola","sequence":"additional","affiliation":[{"name":"IMM-CNR, Unit of Lecce, Via Monteroni, I-73100 Lecce, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bahram","family":"Nabet","sequence":"additional","affiliation":[{"name":"Electrical and Computer Engineering Department, Drexel University, Philadelphia, PA 19104, USA"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2013,2,18]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"910","DOI":"10.1109\/22.989974","article-title":"Terahertz technology","volume":"50","author":"Siegel","year":"2002","journal-title":"IEEE Trans. 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