{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T04:35:17Z","timestamp":1760243717876,"version":"build-2065373602"},"reference-count":18,"publisher":"MDPI AG","issue":"12","license":[{"start":{"date-parts":[[2013,12,4]],"date-time":"2013-12-04T00:00:00Z","timestamp":1386115200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>This work introduces a novel architecture for increasing the sensitivity of bulk mode gyroscopes. It is based on adding parallel plate comb drives to the points of maximum vibration amplitude, and tuning the stiffness of the combs. This increases the drive strength and results in a significant sensitivity improvement. The architecture is targeted for technologies with ~100 nm transducer gaps in order to achieve very high performance devices. In this work, this sensitivity enhancement concept was implemented in SOIMUMPs, a commercial relatively large gap technology. Prototypes were measured to operate at frequencies of ~1.5 MHz, with quality factors of ~33,000, at a 10 mTorr vacuum level. Measurements using discrete electronics show a rate sensitivity of 0.31 \u03bcV\/\u00b0\/s, corresponding to a capacitance sensitivity of 0.43 aF\/\u00b0\/s\/electrode, two orders of magnitude higher than a similar design without combs, fabricated in the same technology.<\/jats:p>","DOI":"10.3390\/s131216641","type":"journal-article","created":{"date-parts":[[2013,12,4]],"date-time":"2013-12-04T12:02:38Z","timestamp":1386158558000},"page":"16641-16656","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":10,"title":["A Novel Comb Architecture for Enhancing the Sensitivity of Bulk Mode Gyroscopes"],"prefix":"10.3390","volume":"13","author":[{"given":"Mohannad","family":"Elsayed","sequence":"first","affiliation":[{"name":"Department of Electrical and Computer Engineering, McGill University, Montr\u00e9al,  Qu\u00e9bec H3A 0E9, Canada"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Frederic","family":"Nabki","sequence":"additional","affiliation":[{"name":"Department of Computer Science, Universit\u00e9 du Qu\u00e9bec \u00e0 Montr\u00e9al, Montr\u00e9al, Qu\u00e9bec H3C 3P8, Canada"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Mourad","family":"El-Gamal","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, McGill University, Montr\u00e9al,  Qu\u00e9bec H3A 0E9, Canada"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2013,12,4]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Johari, H., and Ayazi, F. 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Beirut, Lebanon."},{"key":"ref_9","doi-asserted-by":"crossref","unstructured":"Nabki, F., Dusatko, T., Vengallatore, S., and El-Gamal, M. (2008, January 1\u20135). Low-Temperature (<300 \u00b0C) Low-Stress Silicon Carbide Surface Micromachining Fabrication Technology. Hilton Head Island, CA, USA.","DOI":"10.31438\/trf.hh2008.57"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"720","DOI":"10.1109\/JMEMS.2011.2111355","article-title":"Low stress CMOS-compatible silicon carbide surface-micromachining technology\u0333\u2014Part I: Process development and characterization","volume":"20","author":"Nabki","year":"2011","journal-title":"J. Microelectromech. Syst."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"730","DOI":"10.1109\/JMEMS.2011.2115130","article-title":"Low stress CMOS-compatible silicon carbide surface-micromachining technology\u0333\u2014Part II: Beam resonators for MEMS above IC","volume":"20","author":"Nabki","year":"2011","journal-title":"J. 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[4th ed.]."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"130","DOI":"10.1016\/j.sna.2007.04.023","article-title":"Characteristics of commercially available silicon-on-insulator MEMS material","volume":"138","author":"Miller","year":"2007","journal-title":"J. Sens. Actuatators"},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"229","DOI":"10.1109\/JMEMS.2009.2039697","article-title":"What is the Young's modulus of silicon?","volume":"19","author":"Hopcroft","year":"2010","journal-title":"J. Microelectromech. Syst."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"345","DOI":"10.1007\/s10470-013-0186-8","article-title":"A low cross-sensitivity dual-axis silicon-on-insulator accelerometer integrated as a system in package with digital output","volume":"77","author":"Alfaifi","year":"2013","journal-title":"Integr. 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