{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T04:34:34Z","timestamp":1760243674286,"version":"build-2065373602"},"reference-count":19,"publisher":"MDPI AG","issue":"12","license":[{"start":{"date-parts":[[2013,12,6]],"date-time":"2013-12-06T00:00:00Z","timestamp":1386288000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/3.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>In this paper, we report the realization and characterization of a condensation sensor based on indium nitride (InN) layers deposited by magnetron sputtering on glass and flexible plastic substrates, having fast response and using potentially low cost fabrication technology. The InN devices work as open gate thin film sensitive transistors. Condensed water droplets, formed on the open gate region of the sensors, deplete the electron accumulation layer on the surface of InN film, thus decreasing the current of the sensor. The current increases back to its initial value when water droplets evaporate from the exposed InN film surface. The response time is as low as 2 s.<\/jats:p>","DOI":"10.3390\/s131216940","type":"journal-article","created":{"date-parts":[[2013,12,6]],"date-time":"2013-12-06T12:12:35Z","timestamp":1386331955000},"page":"16940-16949","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["InN Based Water Condensation Sensors on Glass and Flexible Plastic Substrates"],"prefix":"10.3390","volume":"13","author":[{"given":"Viorel","family":"Dumitru","sequence":"first","affiliation":[{"name":"Honeywell Romania S.R.L, Sensors & Wireless Laboratory Bucharest, Calea Floreasca 169A, Building A, Bucharest 014459, Romania"}]},{"given":"Stefan","family":"Costea","sequence":"additional","affiliation":[{"name":"Honeywell Romania S.R.L, Sensors & Wireless Laboratory Bucharest, Calea Floreasca 169A, Building A, Bucharest 014459, Romania"}]},{"given":"Mihai","family":"Brezeanu","sequence":"additional","affiliation":[{"name":"Honeywell Romania S.R.L, Sensors & Wireless Laboratory Bucharest, Calea Floreasca 169A, Building A, Bucharest 014459, Romania"}]},{"given":"George","family":"Stan","sequence":"additional","affiliation":[{"name":"National Institute of Materials Physics, Atomistilor 105 bis, Magurele 077125, Romania"}]},{"given":"Cristina","family":"Besleaga","sequence":"additional","affiliation":[{"name":"National Institute of Materials Physics, Atomistilor 105 bis, Magurele 077125, Romania"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1914-4210","authenticated-orcid":false,"given":"Aurelian","family":"Galca","sequence":"additional","affiliation":[{"name":"National Institute of Materials Physics, Atomistilor 105 bis, Magurele 077125, Romania"}]},{"given":"Gabriela","family":"Ionescu","sequence":"additional","affiliation":[{"name":"Petroleum-Gas University of Ploiesti, Blvd. Bucuresti no 39, Ploie\u015fti 100680, Romania"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0389-0868","authenticated-orcid":false,"given":"Octavian","family":"Ionescu","sequence":"additional","affiliation":[{"name":"Petroleum-Gas University of Ploiesti, Blvd. Bucuresti no 39, Ploie\u015fti 100680, Romania"}]}],"member":"1968","published-online":{"date-parts":[[2013,12,6]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"1480","DOI":"10.1002\/pssc.200881516","article-title":"Transport characteristics of indium nitride (InN) films grown by plasma assisted molecular beam epitaxy (PAMBE)","volume":"6","author":"Aidam","year":"2009","journal-title":"Phys. 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