{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,1]],"date-time":"2026-03-01T00:31:18Z","timestamp":1772325078578,"version":"3.50.1"},"reference-count":34,"publisher":"MDPI AG","issue":"3","license":[{"start":{"date-parts":[[2015,3,23]],"date-time":"2015-03-23T00:00:00Z","timestamp":1427068800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"National Natural Science Found of China for Distinguished Young Scholars","award":["50925727"],"award-info":[{"award-number":["50925727"]}]},{"name":"National Defense Science and Technology Project of China","award":["C1120110004, 9140A27020211DZ5102"],"award-info":[{"award-number":["C1120110004, 9140A27020211DZ5102"]}]},{"name":"Key Grant Project of Chinese Ministry of Education","award":["313018"],"award-info":[{"award-number":["313018"]}]},{"name":"Key Science and Technology Project of Anhui Province of China","award":["1301022036"],"award-info":[{"award-number":["1301022036"]}]},{"name":"Jiangxi Province Science Foundation for Youths","award":["20142BAB217008"],"award-info":[{"award-number":["20142BAB217008"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>This paper presents a novel monolithic pressure sensor tag for passive wireless applications. The proposed pressure sensor tag is based on an ultra-high frequency RFID system. The pressure sensor element is implemented in the 0.18 \u00b5m CMOS process and the membrane gap is formed by sacrificial layer release, resulting in a sensitivity of 1.2 fF\/kPa within the range from 0 to 600 kPa. A three-stage rectifier adopts a chain of auxiliary floating rectifier cells to boost the gate voltage of the switching transistors, resulting in a power conversion efficiency of 53% at the low input power of \u221220 dBm. The capacitive sensor interface, using phase-locked loop archietcture, employs fully-digital blocks, which results in a 7.4 bits resolution and 0.8 \u00b5W power dissipation at 0.8 V supply voltage. The proposed passive wireless pressure sensor tag costs a total 3.2 \u00b5W power dissipation.<\/jats:p>","DOI":"10.3390\/s150306872","type":"journal-article","created":{"date-parts":[[2015,3,23]],"date-time":"2015-03-23T12:17:00Z","timestamp":1427113020000},"page":"6872-6884","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":18,"title":["A CMOS Pressure Sensor Tag Chip for Passive  Wireless Applications"],"prefix":"10.3390","volume":"15","author":[{"given":"Fangming","family":"Deng","sequence":"first","affiliation":[{"name":"School of Electrical and Electronic Engineering, East China Jiao Tong University, Nanchang 330013, China"},{"name":"School of Electrical Engineering and Automation, Hefei University of Technology, Hefei 230009, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yigang","family":"He","sequence":"additional","affiliation":[{"name":"School of Electrical Engineering and Automation, Hefei University of Technology, Hefei 230009, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bing","family":"Li","sequence":"additional","affiliation":[{"name":"School of Electrical Engineering and Automation, Hefei University of Technology, Hefei 230009, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Lei","family":"Zuo","sequence":"additional","affiliation":[{"name":"School of Electrical Engineering and Automation, Hefei University of Technology, Hefei 230009, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiang","family":"Wu","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering, East China Jiao Tong University, Nanchang 330013, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhihui","family":"Fu","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering, East China Jiao Tong University, Nanchang 330013, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2015,3,23]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Cheng, C.L., Chang, H.C., Chang, H.C., Tuan, Y.T., and Fang, W. (2014, January 26\u201330). Mechanical force-displancement transduction structure for performance enhancement of CMOS-MEMS pressure sensor. Proceedings of the 27th International Conference on MEMS, San Francisco, CA, USA.","DOI":"10.1109\/MEMSYS.2014.6765751"},{"key":"ref_2","unstructured":"Nie, M., Huang, Q.A., Qin, M., and Li, W.H. (2010, January 16\u201319). A capacitive pressure sensor using hybrid silicon-glass structure for hermetic wafer level packaging. Proceedings of the 11th International Conference on Electronic Packaging Technology and High Density Packaging, Xi\u2019an, China."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"055007","DOI":"10.1088\/0960-1317\/23\/5\/055007","article-title":"CMOS MEMS capacitive absolute pressure sensor","volume":"23","author":"Narducci","year":"2013","journal-title":"J. Micromech. Microeng."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"9","DOI":"10.1016\/j.sna.2011.12.018","article-title":"CMOS compatible polycrystalline silicon-germanium based pressure sensors","volume":"188","author":"Gonzalez","year":"2012","journal-title":"Sens. Actuators A Phys."},{"key":"ref_5","doi-asserted-by":"crossref","unstructured":"Zhang, Y., Howver, R., Gogoi, B., and Yazdi, N. (2011, January 5\u20139). A high-sensitive ultrin-thin MEMS capacitive pressure sensor. Proceedings of the 16th International Solid-State Sensors, Actuators and Microsystems Conference, Beijing, China.","DOI":"10.1109\/TRANSDUCERS.2011.5969151"},{"key":"ref_6","first-page":"4101","article-title":"Analysis and measurments of path loss effects for ultra high frequency radio-frequency identification in real environments","volume":"62","author":"Zuo","year":"2013","journal-title":"Acta Phys. Sin."},{"key":"ref_7","first-page":"4202","article-title":"Analysis and measurement for passive tag modulation performance of backscatter link","volume":"60","author":"Li","year":"2011","journal-title":"Acta Phys. Sin."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"49","DOI":"10.1109\/LMWC.2012.2234092","article-title":"Enhanced UHF RFID sensor tag","volume":"23","author":"Catarinucci","year":"2013","journal-title":"IEEE Microw. Wirel. Compon. Lett."},{"key":"ref_9","first-page":"337","article-title":"A passive RFID tag embedded temperature sensor with improved process spreads immunity for a \u221230 \u00b0C to 60 \u00b0C sensing range","volume":"61","author":"Wang","year":"2014","journal-title":"IEEE Circiuts Syst. Mag."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"343","DOI":"10.1007\/s10470-013-0046-6","article-title":"Nano watt CMOS temperature sensor","volume":"75","author":"Sahafi","year":"2013","journal-title":"Analog. Integr. Circuits Signal Process."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"1500","DOI":"10.1109\/TCSI.2007.897768","article-title":"An ultra-low-power long range battery\/passive RFID tag for UHF and microwave bands with a current consumption of 700 nA at 1.5 V","volume":"54","author":"Pillai","year":"2007","journal-title":"IEEE Trans. Circuits Syst. I"},{"key":"ref_12","doi-asserted-by":"crossref","unstructured":"Kapucu, K., Panades, J.L.M., and Dehollain, C. (2013, January 3\u20137). Design of a passive UHF RFID tag for capacitive sensor applications. Proceedings of the 9th Conference on Ph.D. Research in Microelectronics and Electronics, Villach, Austria.","DOI":"10.1109\/PRIME.2013.6603157"},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"1504","DOI":"10.1016\/j.mejo.2009.01.013","article-title":"A compact low-power UHF RFID tag","volume":"40","author":"Ashry","year":"2009","journal-title":"Microelectron. J."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"10158","DOI":"10.3390\/s91210158","article-title":"Capacitive micro pressure sensor integrated with a ring oscillator circuit on chip","volume":"9","author":"Dai","year":"2009","journal-title":"Sensors"},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"51","DOI":"10.1016\/j.mejo.2009.12.003","article-title":"New design of RF rectifier for passive UHF RFID transponders","volume":"41","author":"Liu","year":"2010","journal-title":"Microelectron. J."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"1602","DOI":"10.1109\/JSSC.2003.817249","article-title":"Fully integrated passive UHF RFID transponder IC with 16.7-\u03bcW minimum RF input power","volume":"38","author":"Karthaus","year":"2003","journal-title":"IEEE J. Solid Sate Circuits Soc."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"354","DOI":"10.1109\/JSSC.2008.2010991","article-title":"A RF to DC Voltage Conversion Model for Multi-Stage Rectifiers in UHF RFID Transponders","volume":"44","author":"Barnett","year":"2009","journal-title":"IEEE J. Solid Sate Circuits Soc."},{"key":"ref_18","doi-asserted-by":"crossref","unstructured":"Theilmann, P.T., Presti, C.D., Kelly, D., and Asbeck, P.M. (2010, January 23\u201325). Near zero turn-on voltage high-efficiency UHF RFID rectifier in silicon-on-sapphire CMOS. Proceeding of the 2010 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Anaheim, CA, USA.","DOI":"10.1109\/RFIC.2010.5477409"},{"key":"ref_19","doi-asserted-by":"crossref","unstructured":"Raben, H., Borg, J., and Johansson, J. (2012, January 3\u20135). An active MOS diode with Vth-cancellation for RFID rectifiers. Proceeding of the 2012 IEEE International Conference on RFID, Orlando, FL, USA.","DOI":"10.1109\/RFID.2012.6193056"},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"178","DOI":"10.1109\/JSSC.2009.2034440","article-title":"A 5.2 mw self-configured wearable body sensor network controller and a 12 W wirelessly powered sensor for a continuous health monitoring system","volume":"45","author":"Yoo","year":"2010","journal-title":"IEEE J. Solid Sate Circuits Soc."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"1749","DOI":"10.1109\/TCSI.2010.2103172","article-title":"An integrated power-efficient active rectifier with offset-controlled high speed comparators for inductively powered applications","volume":"58","author":"Lee","year":"2011","journal-title":"IEEE Trans. Circuits Syst. I"},{"key":"ref_22","doi-asserted-by":"crossref","unstructured":"Bakhtiar, A.S, Jalali, M.S, and Mirabbasi, S. (2010, January 14\u201316). A high-efficiency CMOS rectifier for low-power RFID tags. Proceeding of the 2010 IEEE International Conference on RFID, Orlando, FL, USA.","DOI":"10.1109\/RFID.2010.5467271"},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"3011","DOI":"10.1109\/JSSC.2009.2028955","article-title":"High-efficiency differential-drive CMOS rectifier for UHF RFIDs","volume":"44","author":"Kotani","year":"2009","journal-title":"IEEE J. Solid Sate Circuits Soc."},{"key":"ref_24","doi-asserted-by":"crossref","unstructured":"Kamalinejad, P., Keikhosravy, K., Mirabbasi, S., and Leung, V. (2013, January 3\u20135). An efficiency enhancement technique for CMOS rectifiers with low start-up voltage for UHF RFID tags. Proceedings of the 2013 International Green Computing Conference (IGCC), Dallas, TX, USA.","DOI":"10.1109\/IGCC.2013.6604483"},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"3193","DOI":"10.1109\/JSSC.2009.2031059","article-title":"An efficiency enhancement technique for CMOS rectifiers with low start-up voltage for UHF RFID tags","volume":"44","author":"Paavola","year":"2009","journal-title":"IEEE J. Solid Sate Circuits Soc."},{"key":"ref_26","first-page":"90","article-title":"A delta\u2013sigma interface circuit for capacitive sensors with an automatically calibrated zero point","volume":"58","author":"Shin","year":"2011","journal-title":"IEEE Trans. Circuits Syst. II"},{"key":"ref_27","doi-asserted-by":"crossref","unstructured":"Xia, S., Makinwa, K., and Nihtianov, S. (2012, January 19\u201323). A capacitance-to-digital converter for displacement sensing with 17 b resolution and 20 \u03bcs conversion time. Proceeding of the 2012 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), San Francisco, CA, USA.","DOI":"10.1109\/ISSCC.2012.6176973"},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"2469","DOI":"10.1109\/JSSC.2013.2275661","article-title":"A 1.2-V 8.3-nJ CMOS Humidity Sensor for RFID Applications","volume":"48","author":"Tan","year":"2013","journal-title":"IEEE J. Solid State Circuits Soc."},{"key":"ref_29","doi-asserted-by":"crossref","unstructured":"Nguyen, T.T., and Hafliger, P. (2013, January 1\u20132). An energy efficient inverter based readout circuit for capacitive sensor. Proceeding of the Biomedical Circuits and Systems Conference (BioCAS), Rotterdam, The Netherlands.","DOI":"10.1109\/BioCAS.2013.6679705"},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"447","DOI":"10.1109\/TIM.2011.2161929","article-title":"A capacitance-ratio-modulated current front-end circuit with pulsewidth modulation output for a capacitive sensor interface","volume":"61","author":"Sheu","year":"2012","journal-title":"IEEE Trans. Instrum. Measur."},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"1703","DOI":"10.1109\/JSSC.2012.2191212","article-title":"An energy-efficient 15-bit capacitive-sensor interface based on period modulation","volume":"47","author":"Tan","year":"2012","journal-title":"IEEE J. Solid Sate Circuits Soc."},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"1419","DOI":"10.1109\/TCSI.2012.2220461","article-title":"A low-power interface for capacitive sensors with PWM output and intrinsic low pass characteristic","volume":"60","author":"Nizza","year":"2013","journal-title":"IEEE Trans. Circuits Syst. I"},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"220","DOI":"10.1016\/j.sna.2011.04.047","article-title":"A novel PLL-based frequency-to-digital conversion mechanism for sensor interfaces","volume":"172","author":"Danneels","year":"2011","journal-title":"Sens. Actuators A Phys."},{"key":"ref_34","doi-asserted-by":"crossref","first-page":"125104","DOI":"10.1088\/0957-0233\/25\/12\/125104","article-title":"A CMOS pressure sensor with integrated interface for passive RFID applications","volume":"25","author":"Deng","year":"2014","journal-title":"Measur. Sci. Technol."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/15\/3\/6872\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T20:43:48Z","timestamp":1760215428000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/15\/3\/6872"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,3,23]]},"references-count":34,"journal-issue":{"issue":"3","published-online":{"date-parts":[[2015,3]]}},"alternative-id":["s150306872"],"URL":"https:\/\/doi.org\/10.3390\/s150306872","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2015,3,23]]}}}