{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,19]],"date-time":"2026-06-19T14:44:07Z","timestamp":1781880247842,"version":"3.54.5"},"reference-count":23,"publisher":"MDPI AG","issue":"5","license":[{"start":{"date-parts":[[2015,4,29]],"date-time":"2015-04-29T00:00:00Z","timestamp":1430265600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100012166","name":"National Basic Research Program of China","doi-asserted-by":"publisher","award":["2014CB744600"],"award-info":[{"award-number":["2014CB744600"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]},{"name":"National Sciences Foundation of China","award":["61431019 and 61372054"],"award-info":[{"award-number":["61431019 and 61372054"]}]},{"DOI":"10.13039\/501100009592","name":"Beijing municipal science and technology commission","doi-asserted-by":"publisher","award":["D11110100160000"],"award-info":[{"award-number":["D11110100160000"]}],"id":[{"id":"10.13039\/501100009592","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Resonant pressure microsensors are widely used in the fields of aerospace exploration and atmospheric pressure monitoring due to their advantages of quasi-digital output and long-term stability, which, however, requires the use of additional temperature sensors for temperature compensation. This paper presents a resonant pressure microsensor capable of self-temperature compensation without the need for additional temperature sensors. Two doubly-clamped \u201cH\u201d type resonant beams were arranged on the pressure diaphragm, which functions as a differential output in response to pressure changes. Based on calibration of a group of intrinsic resonant frequencies at different pressure and temperature values, the functions with inputs of two resonant frequencies and outputs of temperature and pressure under measurement were obtained and thus the disturbance of temperature variations on resonant frequency shifts was properly addressed. Before compensation, the maximal errors of the measured pressure values were over 1.5% while after compensation, the errors were less than 0.01% of the full pressure scale (temperature range of \u221240 \u00b0C to 70 \u00b0C and pressure range of 50 kPa to 110 kPa).<\/jats:p>","DOI":"10.3390\/s150510048","type":"journal-article","created":{"date-parts":[[2015,4,29]],"date-time":"2015-04-29T11:02:35Z","timestamp":1430305355000},"page":"10048-10058","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":39,"title":["A Resonant Pressure Microsensor Capable of  Self-Temperature Compensation"],"prefix":"10.3390","volume":"15","author":[{"given":"Yinan","family":"Li","sequence":"first","affiliation":[{"name":"State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China"},{"name":"University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Junbo","family":"Wang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhenyu","family":"Luo","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China"},{"name":"University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Deyong","family":"Chen","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4612-3279","authenticated-orcid":false,"given":"Jian","family":"Chen","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2015,4,29]]},"reference":[{"key":"ref_1","first-page":"180","article-title":"Fabrication of a novel resonant pressure sensor based on SOI wafer","volume":"25","author":"Ma","year":"2012","journal-title":"Chin. J. Sens. Actuators"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"147","DOI":"10.1016\/S0924-4247(00)00385-X","article-title":"CMOS-compatible capacitive high-temperature pressure sensors","volume":"85","author":"Kasten","year":"2000","journal-title":"Sens. Actuators A Phys."},{"key":"ref_3","first-page":"74","article-title":"An LTCC-based capacitive pressure sensor with a digital output","volume":"40","author":"Santo","year":"2010","journal-title":"Inf. MIDEM"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"343","DOI":"10.1016\/j.microrel.2005.04.008","article-title":"Temperature compensation of piezoresistive micro-machined porous silicon pressure sensor by ann","volume":"46","author":"Pramanik","year":"2006","journal-title":"Microelectron. Reliab."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"47","DOI":"10.1016\/j.phpro.2011.10.008","article-title":"The thermal drift characteristics of piezoresistive pressure sensor","volume":"21","author":"Otmani","year":"2011","journal-title":"Phys. Procedia"},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"469","DOI":"10.1016\/S1359-0286(98)80009-0","article-title":"Materials for high-temperature piezoelectric transducers","volume":"3","author":"Damjanovic","year":"1998","journal-title":"Curr. Opin. Solid State Mater. Sci."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"157","DOI":"10.1007\/s11581-008-0284-2","article-title":"Electromechanical properties and defect chemistry of high-temperature piezoelectric materials","volume":"15","author":"Schulz","year":"2009","journal-title":"Ionics"},{"key":"ref_8","doi-asserted-by":"crossref","unstructured":"Beeby, S.P., Ensell, G., Kraft, M., and White, N.M. (2004). MEMS Mechanical Sensors, Artech House. [1st ed.].","DOI":"10.1108\/sr.2004.24.3.319.2"},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"369","DOI":"10.1049\/ip-d.1988.0056","article-title":"Miniature silicon resonant pressure sensor","volume":"135","author":"Greenwood","year":"1988","journal-title":"IEE Proc. D Control Theory Appl."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"82","DOI":"10.1016\/0924-4247(93)80017-B","article-title":"High accuracy pressure measurement with a silicon resonant sensor","volume":"37","author":"Greenwood","year":"1993","journal-title":"Sens. Actuators A Phys."},{"key":"ref_11","first-page":"63","article-title":"Brief discussion on temperature compensation technology of sensor","volume":"6","author":"Du","year":"2009","journal-title":"Electron. Des. Eng."},{"key":"ref_12","first-page":"16","article-title":"Temperature compensation of pressure sensor","volume":"8","author":"Li","year":"2000","journal-title":"Sen. World"},{"key":"ref_13","first-page":"375","article-title":"Comparing the different arithmetic methods for the offset drift compensation of pressure sensor","volume":"9","author":"Su","year":"2004","journal-title":"J. Transduct. Technol."},{"key":"ref_14","first-page":"1127","article-title":"Research of sensor nonlinear compensation","volume":"10","author":"Ji","year":"2000","journal-title":"Machinery"},{"key":"ref_15","first-page":"1","article-title":"Normalizing the polynomial-match for a non-linear function in sensors and solid electronics","volume":"1","author":"Sun","year":"2004","journal-title":"J. Electron Devices"},{"key":"ref_16","first-page":"2235","article-title":"Pressure sensor temperature compensation based on least squares support vector machine","volume":"12","author":"Liang","year":"2007","journal-title":"Chin. J. Sci. Instrum."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"2870","DOI":"10.3788\/OPE.20132111.2870","article-title":"Self-temperature compensation for high quality factor micro-machined gyroscope","volume":"11","author":"Yang","year":"2013","journal-title":"Opt. Precis. Eng."},{"key":"ref_18","doi-asserted-by":"crossref","unstructured":"Wang, J.C., Xia, X.Y., Zou, H.S., Song, F., and Li, X.X. (2013, January 16\u201320). Piezoresistive pressure sensor with dual-unit configuration for on-chip self-compensation and suppression of temperature drift. Proceedings of the 2013 Transducers & Eurosensors XXVII: 17th International Conference on Solid-State Sensors, Actuators and Microsystems, Barcelona, Spain.","DOI":"10.1109\/Transducers.2013.6627129"},{"key":"ref_19","first-page":"12","article-title":"Temperature characteristics of quartz resonant force sensors and self-temperature-compensation","volume":"8","author":"Wang","year":"1997","journal-title":"J. Tsinghua Univ. (Sci. Technol.)"},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"24244","DOI":"10.3390\/s141224244","article-title":"A High-Q resonant pressure micro sensor with through-glass electrical interconnections based on wafer-level MEMS vacuum packaging","volume":"14","author":"Luo","year":"2014","journal-title":"Sensors"},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"1490","DOI":"10.1016\/j.proeng.2010.09.399","article-title":"Design and experiment of a laterally driven micromachined resonant pressure sensor for barometers","volume":"5","author":"Chen","year":"2010","journal-title":"Procedia Eng."},{"key":"ref_22","doi-asserted-by":"crossref","unstructured":"Luo, Z., Chen, D., and Wang, J. (2014, January 13\u201316). Resonant pressure sensor with through-glass electrical interconnect based on SOI wafer technology. Proceedings of the 2014 9th IEEE International Conference on Nano\/Micro Engineered and Molecular Systems (NEMS), Waikiki Beach, HI, USA.","DOI":"10.1109\/NEMS.2014.6908800"},{"key":"ref_23","unstructured":"Chen, D. (2002). Research on Micromachined Resonant Beam Pressure Sensors. [Ph.D. Thesis, University of Chinese Academy of Sciences]."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/15\/5\/10048\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T20:45:32Z","timestamp":1760215532000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/15\/5\/10048"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,4,29]]},"references-count":23,"journal-issue":{"issue":"5","published-online":{"date-parts":[[2015,5]]}},"alternative-id":["s150510048"],"URL":"https:\/\/doi.org\/10.3390\/s150510048","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2015,4,29]]}}}