{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T04:24:09Z","timestamp":1760243049091,"version":"build-2065373602"},"reference-count":45,"publisher":"MDPI AG","issue":"5","license":[{"start":{"date-parts":[[2015,5,22]],"date-time":"2015-05-22T00:00:00Z","timestamp":1432252800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Inexpensive high-resolution silicon (Si) X-ray detectors are required for on-site surveys of traces of hazardous elements in food and soil by measuring the energies and counts of X-ray fluorescence photons radially emitted from these elements. Gated silicon drift detectors (GSDDs) are much cheaper to fabricate than commercial silicon drift detectors (SDDs). However, previous GSDDs were fabricated from \\(10\\)-k\\(\\Omega \\cdot\\)cm Si wafers, which are more expensive than \\(2\\)-k\\(\\Omega \\cdot\\)cm Si wafers used in commercial SDDs. To fabricate cheaper portable X-ray fluorescence instruments, we investigate GSDDs formed from \\(2\\)-k\\(\\Omega \\cdot\\)cm Si wafers. The thicknesses of commercial SDDs are up to \\(0.5\\) mm, which can detect photons with energies up to \\(27\\) keV, whereas we describe GSDDs that can detect photons with energies of up to \\(35\\) keV. We simulate the electric potential distributions in GSDDs with Si thicknesses of \\(0.5\\) and \\(1\\) mm at a single high reverse bias. GSDDs with one gate pattern using any resistivity Si wafer can work well for changing the reverse bias that is inversely proportional to the resistivity of the Si wafer.<\/jats:p>","DOI":"10.3390\/s150512022","type":"journal-article","created":{"date-parts":[[2015,5,26]],"date-time":"2015-05-26T04:16:36Z","timestamp":1432613796000},"page":"12022-12033","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["Gated Silicon Drift Detector Fabricated from a Low-Cost Silicon Wafer"],"prefix":"10.3390","volume":"15","author":[{"given":"Hideharu","family":"Matsuura","sequence":"first","affiliation":[{"name":"Department of Electrical and Electronic Engineering, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shungo","family":"Sakurai","sequence":"additional","affiliation":[{"name":"Department of Electrical and Electronic Engineering, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yuya","family":"Oda","sequence":"additional","affiliation":[{"name":"Department of Electrical and Electronic Engineering, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shinya","family":"Fukushima","sequence":"additional","affiliation":[{"name":"Department of Electrical and Electronic Engineering, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shohei","family":"Ishikawa","sequence":"additional","affiliation":[{"name":"Department of Electrical and Electronic Engineering, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Akinobu","family":"Takeshita","sequence":"additional","affiliation":[{"name":"Department of Electrical and Electronic Engineering, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Atsuki","family":"Hidaka","sequence":"additional","affiliation":[{"name":"Department of Electrical and Electronic Engineering, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2015,5,22]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"608","DOI":"10.1016\/0167-5087(84)90113-3","article-title":"Semiconductor drift chamber\u2014An application of a novel charge transport scheme","volume":"225","author":"Gatti","year":"1984","journal-title":"Nucl. Instrum. Methods"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"203","DOI":"10.1109\/23.34435","article-title":"Spiral silicon drift detectors","volume":"36","author":"Rehak","year":"1989","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"619","DOI":"10.1109\/23.159676","article-title":"Large area cylindrical silicn drift detector","volume":"39","author":"Chen","year":"1992","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"271","DOI":"10.1016\/0168-9002(93)90281-L","article-title":"New silicon drift detector design fot diminishing lateral diffusion","volume":"335","author":"Hijzen","year":"1993","journal-title":"Nucl. Instrum. Methods Phys. Res."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"1704","DOI":"10.1109\/23.322776","article-title":"Room temperature X-ray spectroscopy with a silicon diode detector and an ultra low noise preamplifier","volume":"41","author":"Bertuccio","year":"1994","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"12","DOI":"10.1109\/23.364875","article-title":"Room temperature, high-resolution X-ray spectroscopy with silicon drift chambers","volume":"42","author":"Pinotti","year":"1995","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"1497","DOI":"10.1109\/23.467947","article-title":"Designing a linear silicon drift detector","volume":"42","author":"Gramegna","year":"1995","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"346","DOI":"10.1016\/0168-9002(96)00210-0","article-title":"Silicon drift detectors for high resolution room temperature X-ray spectroscopy","volume":"377","author":"Lechner","year":"1996","journal-title":"Nucl. Instrum. Methods Phys. Res."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"375","DOI":"10.1016\/0168-9002(96)00019-8","article-title":"A new silicon drift detector with reduced lateral diffusion","volume":"377","author":"Castoldi","year":"1996","journal-title":"Nucl. Instrum. Methods Phys. Res."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"288","DOI":"10.1016\/S0168-9002(96)00493-7","article-title":"Simulation and modeling of a new silicon X-ray drift detector design for synchrotron radiation aplications","volume":"380","author":"Iwanczyk","year":"1996","journal-title":"Nucl. Instrum. Methods Phys. Res."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"524","DOI":"10.1016\/S0168-9002(96)00814-5","article-title":"A high resolution, 6 channel, silicon drift detector array with integrated JFET's designed for XAFS spectroscopy: First X-ray fluorescence excitation spectra recorded at the ESRF","volume":"382","author":"Gauthier","year":"1996","journal-title":"Nucl. Instrum. Methods Phys. Res."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"250","DOI":"10.1016\/S0168-9002(96)01000-5","article-title":"Ultrathin entrance windows for silicon drift detectors","volume":"387","author":"Hartmann","year":"1997","journal-title":"Nucl. Instrum. Methods Phys. Res."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"2461","DOI":"10.1063\/1.1148169","article-title":"A new detection system for X-ray microanalysis based on a silicon drift detector with Peltier cooling","volume":"68","author":"Fiorini","year":"1997","journal-title":"Rev. Sci. Instrum."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"L115","DOI":"10.1143\/JJAP.37.L115","article-title":"A new structure of an n-channel junction field-effect transistor embedded in a pin diode for an X-ray detector","volume":"37","author":"Matsuura","year":"1998","journal-title":"Jpn. J. Appl. Phys."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"210","DOI":"10.1016\/S0168-9002(97)01263-1","article-title":"Silicon drift detector with a continuous implanted resisitor as divider-drift electrode","volume":"409","author":"Rashevsky","year":"1998","journal-title":"Nucl. Instrum. Methods Phys. Res."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"53","DOI":"10.1109\/23.747767","article-title":"Diminished electron cloud broadening in a silicon drift detector by sawtooth p+ strips","volume":"46","author":"Valk","year":"1999","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"284","DOI":"10.1109\/23.775529","article-title":"Large area silicon drift detectors for X-rays-new results","volume":"46","author":"Iwanczyk","year":"1999","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"L1015","DOI":"10.1143\/JJAP.38.L1015","article-title":"A new n-channel junction field-effect transistor embedded in the i layer of a pin diode","volume":"38","author":"Matsuura","year":"1999","journal-title":"Jpn. J. Appl. Phys."},{"key":"ref_19","first-page":"622","article-title":"High-resolution X-ray spectrosopy close to room temperature","volume":"4","author":"Meidinger","year":"1999","journal-title":"Microsc. Microanal."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"476","DOI":"10.1016\/S0168-9002(99)00836-0","article-title":"Laboratory and test beam results from a large-area silicon drift detector","volume":"439","author":"Bonvicini","year":"2000","journal-title":"Nucl. Instrum. Methods Phys. Res."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"2748","DOI":"10.1109\/23.901182","article-title":"A novel multicell silicon drift detector module for X-ray spectroscopy and imaging applications","volume":"47","author":"Hansen","year":"2000","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"995","DOI":"10.1109\/TNS.2002.1039603","article-title":"A monolithic array of silicon drift detectors for high-resolution gamma-ray imaging","volume":"49","author":"Fiorini","year":"2002","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"246","DOI":"10.1002\/xrs.711","article-title":"Silicon drift detectors with enlarged sensitive areas","volume":"33","author":"Eggert","year":"2004","journal-title":"X-Ray Spectrom."},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"256","DOI":"10.1002\/xrs.717","article-title":"Novel high-resolution silicon drift detectors","volume":"33","author":"Lechner","year":"2004","journal-title":"X-Ray Spectrom."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"1631","DOI":"10.1109\/TNS.2004.832666","article-title":"Large-area silicon drift detecotrs for new applications in nuclear medicine imaging","volume":"51","author":"Metzger","year":"2004","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"612","DOI":"10.1016\/j.nima.2005.02.013","article-title":"Epitaxy\u2014A new technology for fabrication of advanced silicon radiatin detectors","volume":"544","author":"Kemmer","year":"2005","journal-title":"Nucl. Instrum. Methods Phys. Res."},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"832","DOI":"10.1109\/TNS.2008.2007955","article-title":"The X-ray spectroscopic performance of a very large area silicon drift detector","volume":"56","author":"Zampa","year":"2009","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"2843","DOI":"10.1109\/TNS.2009.2028574","article-title":"Performance of a thin-window silicon drift detector X-ray fluorescence spectrometer","volume":"56","author":"Carini","year":"2009","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"15","DOI":"10.1016\/j.nima.2010.12.129","article-title":"Room-temperature spectroscopic performance of a very-large area silicon drift detector","volume":"633","author":"Zampa","year":"2011","journal-title":"Nucl. Instrum. Methods Phys. Res."},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"1803","DOI":"10.1109\/TNS.2004.832291","article-title":"High effeciency silicon X-ray detectors","volume":"51","author":"Tull","year":"2004","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"328","DOI":"10.1016\/S0168-9002(97)00694-3","article-title":"3D\u2014A proposed new architecture for solid-state radiation detectors","volume":"395","author":"Parker","year":"1997","journal-title":"Nucl. Instrum. Methods Phys. Res."},{"key":"ref_32","doi-asserted-by":"crossref","unstructured":"Christophersen, M., and Phlips, B.F. (2008, January 19\u201325). Thick silicon detector. Washington, WA, USA.","DOI":"10.1109\/NSSMIC.2008.4774938"},{"key":"ref_33","unstructured":"Matsuura, H., Taniguchi, K., and Utaka, T. (2009). Radiation Detection Device. (U.S. Patent Application Serial 61\/185,679)."},{"key":"ref_34","unstructured":"Matsuura, H., Taniguchi, K., and Utaka, T. (2009). Radiation Detection Device. (U.S. Patent Application Serial 61\/185,754)."},{"key":"ref_35","unstructured":"Matsuura, H. (2009). PCT\/JP2007\/65727, Japan Patent Publication 2009-022377."},{"key":"ref_36","unstructured":"Matsuura, H. (2010). Radiation Detection Apparatus. (U.S. Patent Application 2010-0163740), PCT\/JP2007\/65728."},{"key":"ref_37","unstructured":"Matsuura, H. (2009). Radiation Detection Device. (U.S. Patent Application Serial 12\/575,939)."},{"key":"ref_38","unstructured":"Matsuura, H., Hullinger, D., Taniguchi, K., and Utaka, T. (2012). Variable Ring Width SDD. (U.S. Patent 8,314,468B2)."},{"key":"ref_39","first-page":"303","article-title":"Simplification of structures and impruvement of sensitivity of high-energy X-rays for Si X-ray detectors (Silicon drift detetor)","volume":"J93-C","author":"Matsuura","year":"2010","journal-title":"Denshi Joho Tsushin Gakkai Ronbunshi"},{"key":"ref_40","doi-asserted-by":"crossref","first-page":"294","DOI":"10.4028\/www.scientific.net\/KEM.495.294","article-title":"Possibilities for thick, simple-structure silicon X-ray detectors operated by Peltier cooling","volume":"495","author":"Matsuura","year":"2012","journal-title":"Key Eng. Mater."},{"key":"ref_41","doi-asserted-by":"crossref","first-page":"1","DOI":"10.2174\/1874129001307010001","article-title":"Simulation and fabrication of gated silicon drift X-ray detector operated by Peltier cooling","volume":"7","author":"Matsuura","year":"2013","journal-title":"Open Electr. Electron. Eng. J."},{"key":"ref_42","doi-asserted-by":"crossref","unstructured":"Matsuura, H. (2013). Simulation of thick gated silicon drift X-ray detector operated by a single high-valtage source. Jpn. J. Appl. Phys., 52.","DOI":"10.7567\/JJAP.52.024301"},{"key":"ref_43","doi-asserted-by":"crossref","unstructured":"Matsuura, H. (2015). Simulation of 1.5-mm-thick and 15-cm-diameter gated silicon drift X-ray detector operated with a single high-voltage source. Jpn. J. Appl. Phys.","DOI":"10.7567\/JJAP.54.044301"},{"key":"ref_44","doi-asserted-by":"crossref","unstructured":"Sze, S.M., and Ng, K.K. (2007). Physics of Semiconductor Devices, Wiley. [3rd].","DOI":"10.1002\/0470068329"},{"key":"ref_45","unstructured":"Anderson, B.L., and Anderson, R.L. (2005). Fundamentals of Semiconductor Devices, McGraw-Hill."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/15\/5\/12022\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T20:46:47Z","timestamp":1760215607000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/15\/5\/12022"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,5,22]]},"references-count":45,"journal-issue":{"issue":"5","published-online":{"date-parts":[[2015,5]]}},"alternative-id":["s150512022"],"URL":"https:\/\/doi.org\/10.3390\/s150512022","relation":{},"ISSN":["1424-8220"],"issn-type":[{"type":"electronic","value":"1424-8220"}],"subject":[],"published":{"date-parts":[[2015,5,22]]}}}