{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,13]],"date-time":"2025-10-13T19:57:19Z","timestamp":1760385439469,"version":"build-2065373602"},"reference-count":24,"publisher":"MDPI AG","issue":"7","license":[{"start":{"date-parts":[[2015,7,14]],"date-time":"2015-07-14T00:00:00Z","timestamp":1436832000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Spanish MINECO and European Union FEDER","award":["TEC2012-32677"],"award-info":[{"award-number":["TEC2012-32677"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm \u00d7 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology.<\/jats:p>","DOI":"10.3390\/s150717036","type":"journal-article","created":{"date-parts":[[2015,7,14]],"date-time":"2015-07-14T10:53:35Z","timestamp":1436871215000},"page":"17036-17047","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction"],"prefix":"10.3390","volume":"15","author":[{"given":"Eloi","family":"Marig\u00f3","sequence":"first","affiliation":[{"name":"Department of Electronics Engineering, Universitat Aut\u00f2noma de Barcelona (UAB),  Barcelona 08193, Spain"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Marc","family":"Sansa","sequence":"additional","affiliation":[{"name":"Instituto de Microelectr\u00f3nica de Barcelona (IMB-CNM-CSIC), Campus UAB, Barcelona 08193, Spain"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Francesc","family":"P\u00e9rez-Murano","sequence":"additional","affiliation":[{"name":"Instituto de Microelectr\u00f3nica de Barcelona (IMB-CNM-CSIC), Campus UAB, Barcelona 08193, Spain"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Arantxa","family":"Uranga","sequence":"additional","affiliation":[{"name":"Department of Electronics Engineering, Universitat Aut\u00f2noma de Barcelona (UAB),  Barcelona 08193, Spain"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"N\u00faria","family":"Barniol","sequence":"additional","affiliation":[{"name":"Department of Electronics Engineering, Universitat Aut\u00f2noma de Barcelona (UAB),  Barcelona 08193, Spain"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2015,7,14]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"203","DOI":"10.1038\/nnano.2011.44","article-title":"Comparative advantages of mechanical biosensors","volume":"6","author":"Arlett","year":"2011","journal-title":"Nat. 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