{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,8]],"date-time":"2026-08-08T18:30:07Z","timestamp":1786213807917,"version":"3.56.0"},"reference-count":21,"publisher":"MDPI AG","issue":"9","license":[{"start":{"date-parts":[[2015,9,21]],"date-time":"2015-09-21T00:00:00Z","timestamp":1442793600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"National Sciences Foundation of China","award":["No. 61431019"],"award-info":[{"award-number":["No. 61431019"]}]},{"name":"National Sciences Foundation of China","award":["No. 61372054"],"award-info":[{"award-number":["No. 61372054"]}]},{"DOI":"10.13039\/501100012166","name":"National Basic Research Program of China","doi-asserted-by":"publisher","award":["No. 2014CB744600"],"award-info":[{"award-number":["No. 2014CB744600"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100009592","name":"Beijing municipal science and technology commission","doi-asserted-by":"publisher","award":["No. D11110100160000"],"award-info":[{"award-number":["No. D11110100160000"]}],"id":[{"id":"10.13039\/501100009592","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>This paper presents the fabrication and characterization of a resonant pressure microsensor based on SOI-glass wafer-level vacuum packaging. The SOI-based pressure microsensor consists of a pressure-sensitive diaphragm at the handle layer and two lateral resonators (electrostatic excitation and capacitive detection) on the device layer as a differential setup. The resonators were vacuum packaged with a glass cap using anodic bonding and the wire interconnection was realized using a mask-free electrochemical etching approach by selectively patterning an Au film on highly topographic surfaces.  The fabricated resonant pressure microsensor with dual resonators was characterized in a systematic manner, producing a quality factor higher than 10,000 (~6 months), a sensitivity of about 166 Hz\/kPa and a reduced nonlinear error of 0.033% F.S. Based on the differential output, the sensitivity was increased to two times and the temperature-caused frequency drift was decreased to 25%.<\/jats:p>","DOI":"10.3390\/s150924257","type":"journal-article","created":{"date-parts":[[2015,9,21]],"date-time":"2015-09-21T10:17:32Z","timestamp":1442830652000},"page":"24257-24268","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":31,"title":["A Lateral Differential Resonant Pressure Microsensor Based on SOI-Glass Wafer-Level Vacuum Packaging"],"prefix":"10.3390","volume":"15","author":[{"given":"Bo","family":"Xie","sequence":"first","affiliation":[{"name":"State Key Laboratory of Transducer Technology, Institute of Electronics,  Chinese Academy of Sciences, Beijing 100190, China"},{"name":"University of Chinese Academy of Sciences, Beijing 100190, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yonghao","family":"Xing","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology, Institute of Electronics,  Chinese Academy of Sciences, Beijing 100190, China"},{"name":"University of Chinese Academy of Sciences, Beijing 100190, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yanshuang","family":"Wang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology, Institute of Electronics,  Chinese Academy of Sciences, Beijing 100190, China"},{"name":"University of Chinese Academy of Sciences, Beijing 100190, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4612-3279","authenticated-orcid":false,"given":"Jian","family":"Chen","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology, Institute of Electronics,  Chinese Academy of Sciences, Beijing 100190, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Deyong","family":"Chen","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology, Institute of Electronics,  Chinese Academy of Sciences, Beijing 100190, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Junbo","family":"Wang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology, Institute of Electronics,  Chinese Academy of Sciences, Beijing 100190, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2015,9,21]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"298","DOI":"10.1016\/S0924-4247(99)00065-5","article-title":"A high accuracy resonant pressure sensor by fusion bonding and trench etching","volume":"76","author":"Christopher","year":"1999","journal-title":"Sens. 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