{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,18]],"date-time":"2026-02-18T01:52:08Z","timestamp":1771379528667,"version":"3.50.1"},"reference-count":39,"publisher":"MDPI AG","issue":"10","license":[{"start":{"date-parts":[[2015,9,25]],"date-time":"2015-09-25T00:00:00Z","timestamp":1443139200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>We have investigated the effects of metal decoration on the gas-sensing properties of a device with two-dimensional (2D) molybdenum disulfide (MoS2) flake channels and graphene electrodes. The 2D hybrid-structure device sensitively detected NO2 gas molecules (&gt;1.2 ppm) as well as NH3 (&gt;10 ppm). Metal nanoparticles (NPs) could tune the electronic properties of the 2D graphene\/MoS2 device, increasing sensitivity to a specific gas molecule. For instance, palladium NPs accumulate hole carriers of graphene\/MoS2, electronically sensitizing NH3 gas molecules. Contrarily, aluminum NPs deplete hole carriers, enhancing NO2 sensitivity. The synergistic combination of metal NPs and 2D hybrid layers could be also applied to a flexible gas sensor. There was no serious degradation in the sensing performance of metal-decorated MoS2 flexible devices before\/after 5000 bending  cycles. Thus, highly sensitive and endurable gas sensor could be achieved through the  metal-decorated 2D hybrid-structure, offering a useful route to wearable electronic  sensing platforms.<\/jats:p>","DOI":"10.3390\/s151024903","type":"journal-article","created":{"date-parts":[[2015,9,28]],"date-time":"2015-09-28T03:02:55Z","timestamp":1443409375000},"page":"24903-24913","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":49,"title":["Metal Decoration Effects on the Gas-Sensing Properties of 2D Hybrid-Structures on Flexible Substrates"],"prefix":"10.3390","volume":"15","author":[{"given":"Byungjin","family":"Cho","sequence":"first","affiliation":[{"name":"Advanced Functional Thin Films Department, Surface Technology Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 642-831, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jongwon","family":"Yoon","sequence":"additional","affiliation":[{"name":"School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-Gu, Gwangju 500-712, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Sung","family":"Lim","sequence":"additional","affiliation":[{"name":"Department of Nanobio Materials and Electronics, Gwangju Institute of Science and  Technology (GIST), 261 Cheomdan-gwagiro, Buk-Gu, Gwangju 500-712, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ah","family":"Kim","sequence":"additional","affiliation":[{"name":"Advanced Functional Thin Films Department, Surface Technology Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 642-831, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Sun-Young","family":"Choi","sequence":"additional","affiliation":[{"name":"Advanced Functional Thin Films Department, Surface Technology Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 642-831, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Dong-Ho","family":"Kim","sequence":"additional","affiliation":[{"name":"Advanced Functional Thin Films Department, Surface Technology Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 642-831, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kyu","family":"Lee","sequence":"additional","affiliation":[{"name":"Electrochemistry Department, Surface Technology Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 642-831, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Byoung","family":"Lee","sequence":"additional","affiliation":[{"name":"School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-Gu, Gwangju 500-712, Korea"},{"name":"Department of Nanobio Materials and Electronics, Gwangju Institute of Science and  Technology (GIST), 261 Cheomdan-gwagiro, Buk-Gu, Gwangju 500-712, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Heung","family":"Ko","sequence":"additional","affiliation":[{"name":"School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-Gu, Gwangju 500-712, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Myung","family":"Hahm","sequence":"additional","affiliation":[{"name":"Advanced Functional Thin Films Department, Surface Technology Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 642-831, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2015,9,25]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"487","DOI":"10.1038\/nnano.2010.89","article-title":"Graphene transistors","volume":"5","author":"Schwierz","year":"2010","journal-title":"Nat. Nanotechnol."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"1113","DOI":"10.1039\/c0ee00683a","article-title":"Graphene based new energy materials","volume":"4","author":"Sun","year":"2011","journal-title":"Energy Environ. Sci."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"883","DOI":"10.1038\/nphoton.2013.253","article-title":"Chip-integrated ultrafast graphene photodetector with high responsivity","volume":"7","author":"Gan","year":"2013","journal-title":"Nat. Photonics"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"1756","DOI":"10.1002\/adma.200802560","article-title":"Field Emission of Single-Layer Graphene Films Prepared by Electrophoretic Deposition","volume":"21","author":"Wu","year":"2009","journal-title":"Adv. Mater."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"652","DOI":"10.1038\/nmat1967","article-title":"Detection of individual gas molecules adsorbed on graphene","volume":"6","author":"Schedin","year":"2007","journal-title":"Nat. Mater."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"706","DOI":"10.1038\/nature07719","article-title":"Large-scale pattern growth of graphene films for stretchable transparent electrodes","volume":"457","author":"Kim","year":"2009","journal-title":"Nature"},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"192","DOI":"10.1038\/nature11458","article-title":"A roadmap for graphene","volume":"490","author":"Novoselov","year":"2012","journal-title":"Nature"},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"2757","DOI":"10.1039\/C4CS00282B","article-title":"Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material","volume":"44","author":"Zhang","year":"2015","journal-title":"Chem. Soc. Rev."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"2664","DOI":"10.1039\/C4CS00287C","article-title":"Physical and chemical tuning of two-dimensional transition metal dichalcogenides","volume":"44","author":"Wang","year":"2015","journal-title":"Chem. Soc. Rev."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"699","DOI":"10.1038\/nnano.2012.193","article-title":"Electronics and optoelectronics of two-dimensional transition metal dichalcogenides","volume":"7","author":"Wang","year":"2012","journal-title":"Nat. Nanotechnol."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"768","DOI":"10.1038\/nnano.2014.207","article-title":"Electronics based on two-dimensional materials","volume":"9","author":"Fiori","year":"2014","journal-title":"Nat. Nanotechnol."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"2615","DOI":"10.1039\/C4CS00399C","article-title":"Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials","volume":"44","author":"Tan","year":"2015","journal-title":"Chem. Soc. Rev."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"2713","DOI":"10.1039\/C4CS00182F","article-title":"Two-dimensional transition metal dichalcogenide nanosheet-based composites","volume":"44","author":"Tan","year":"2015","journal-title":"Chem. Soc. Rev."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"1067","DOI":"10.1021\/ar4002312","article-title":"Preparation and Applications of Mechanically Exfoliated Single-Layer and Multilayer MoS2 and WSe2 Nanosheets","volume":"47","author":"Li","year":"2014","journal-title":"Acc. Chem. Res."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"2185","DOI":"10.1002\/adma.201304964","article-title":"25th Anniversary Article: Hybrid Nanostructures Based on Two-Dimensional Nanomaterials","volume":"26","author":"Huang","year":"2014","journal-title":"Adv. Mater."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"1934","DOI":"10.1039\/c2cs35387c","article-title":"Metal dichalcogenide nanosheets: preparation, properties and applications","volume":"42","author":"Huang","year":"2013","journal-title":"Chem. Soc. Rev."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"147","DOI":"10.1038\/nnano.2010.279","article-title":"Single-layer MoS2 transistors","volume":"6","author":"Radisavljevic","year":"2011","journal-title":"Nat. Nanotechnol."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"7931","DOI":"10.1021\/nn402954e","article-title":"Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures","volume":"7","author":"Lee","year":"2013","journal-title":"ACS Nano"},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"4674","DOI":"10.1021\/nl302015v","article-title":"Integrated circuits based on bilayer MoS2 transistors","volume":"12","author":"Wang","year":"2012","journal-title":"Nano Lett."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"497","DOI":"10.1038\/nnano.2013.100","article-title":"Ultrasensitive photodetectors based on monolayer MoS2","volume":"8","author":"Lembke","year":"2013","journal-title":"Nat. Nanotechnol."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"74","DOI":"10.1021\/nn2024557","article-title":"Single-Layer MoS2 Phototransistors","volume":"6","author":"Yin","year":"2012","journal-title":"ACS Nano"},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"4879","DOI":"10.1021\/nn400026u","article-title":"Sensing Behavior of Atomically Thin-Layered MoS2 Transistors","volume":"7","author":"Late","year":"2013","journal-title":"ACS Nano"},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"668","DOI":"10.1021\/nl3043079","article-title":"Chemical vapor sensing with monolayer MoS2","volume":"13","author":"Perkins","year":"2013","journal-title":"Nano Lett."},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"16775","DOI":"10.1021\/acsami.5b04541","article-title":"Chemical Sensing of 2D Graphene\/MoS2 Heterostructure device","volume":"7","author":"Cho","year":"2015","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"2952","DOI":"10.1021\/am508535x","article-title":"Bifunctional Sensing Characteristics of Chemical Vapor Deposition Synthesized Atomic-Layered MoS2","volume":"7","author":"Cho","year":"2015","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_26","doi-asserted-by":"crossref","unstructured":"Cho, B., Hahm, M.G., Choi, M., Yoon, J., Kim, A.R., Lee, Y.-J., Park, S.-G., Kwon, J.-D., Kim, C.S., and Song, M. (2015). Charge-transfer-based Gas Sensing Using Atomic-layer MoS2. Sci. Rep., 5.","DOI":"10.1038\/srep08052"},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"419","DOI":"10.1038\/nature12385","article-title":"Van der Waals heterostructures","volume":"499","author":"Geim","year":"2013","journal-title":"Nature"},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"676","DOI":"10.1038\/nnano.2014.150","article-title":"Atomically thin p\u2013n junctions with van der Waals heterointerfaces","volume":"9","author":"Lee","year":"2014","journal-title":"Nat. Nanotechnol."},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"682","DOI":"10.1038\/nnano.2014.167","article-title":"Ultrafast charge transfer in atomically thin MoS2\/WS2 heterostructures","volume":"9","author":"Hong","year":"2014","journal-title":"Nat. Nanotechnol."},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"3055","DOI":"10.1021\/nl404795z","article-title":"Graphene\/MoS2 Hybrid technology for large-scale two-dimensional electronics","volume":"14","author":"Yu","year":"2014","journal-title":"Nano Lett."},{"key":"ref_31","doi-asserted-by":"crossref","unstructured":"Zhang, W., Chuu, C.-P., Huang, J.-K., Chen, C.-H., Tsai, M.-L., Chang, Y.-H., Liang, C.-T., Chen, Y.-Z., Chueh, Y.-L., and He, J.-H. (2014). Ultrahigh-gain photodetectors based on atomically thin graphene-MoS2 heterostructures. Sci. Rep., 4.","DOI":"10.1038\/srep03826"},{"key":"ref_32","doi-asserted-by":"crossref","unstructured":"Geim, A.K. (2009). Graphene: Status and Prospects. 324, 1530\u20131535.","DOI":"10.1126\/science.1158877"},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"3993","DOI":"10.1002\/smll.201300689","article-title":"Harnessing the Influence of Reactive Edges and Defects of Graphene Substrates for Achieving Complete Cycle of Room-Temperature Molecular Sensing","volume":"9","author":"Randeniya","year":"2013","journal-title":"Small"},{"key":"ref_34","doi-asserted-by":"crossref","unstructured":"Zhang, Y.-H., Chen, Y.-B., Zhou, K.-G., Liu, C.-H., Zeng, J., Zhang, H.-L., and Peng, Y. (2009). Improving gas sensing properties of graphene by introducing dopants and defects: A first-principles study. Nanotechnology, 20.","DOI":"10.1088\/0957-4484\/20\/18\/185504"},{"key":"ref_35","doi-asserted-by":"crossref","unstructured":"Zhou, M., Lu, Y.-H., Cai, Y.-Q., Zhang, C., and Feng, Y.-P. (2011). Adsorption of gas molecules on transition metal embedded graphene: A search for high-performance graphene-based catalysts and gas sensors. Nanotechnology, 22.","DOI":"10.1088\/0957-4484\/22\/38\/385502"},{"key":"ref_36","doi-asserted-by":"crossref","first-page":"4511","DOI":"10.1021\/nl5015316","article-title":"Electrical Characteristics of Multilayer MoS2 FET\u2019s with MoS2\/Graphene Heterojunction Contacts","volume":"14","author":"Kwak","year":"2014","journal-title":"Nano Lett."},{"key":"ref_37","doi-asserted-by":"crossref","first-page":"36","DOI":"10.1002\/smll.200500261","article-title":"Metal and metal oxide nanoparticles in chemiresistors: Does the nanoscale matter?","volume":"2","author":"Franke","year":"2006","journal-title":"Small"},{"key":"ref_38","doi-asserted-by":"crossref","first-page":"496","DOI":"10.1088\/0957-4484\/17\/2\/025","article-title":"The effect of metal cluster coatings on carbon nanotubes","volume":"17","author":"Kim","year":"2006","journal-title":"Nanotechnology"},{"key":"ref_39","doi-asserted-by":"crossref","first-page":"2305","DOI":"10.1002\/smll.201402923","article-title":"Stabilizing MoS2 Nanosheets through SnO2 Nanocrystal Decoration for High-Performance Gas Sensing in Air","volume":"11","author":"Cui","year":"2015","journal-title":"Small"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/15\/10\/24903\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T20:49:15Z","timestamp":1760215755000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/15\/10\/24903"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,9,25]]},"references-count":39,"journal-issue":{"issue":"10","published-online":{"date-parts":[[2015,10]]}},"alternative-id":["s151024903"],"URL":"https:\/\/doi.org\/10.3390\/s151024903","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2015,9,25]]}}}