{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T04:26:07Z","timestamp":1760243167847,"version":"build-2065373602"},"reference-count":26,"publisher":"MDPI AG","issue":"1","license":[{"start":{"date-parts":[[2015,12,23]],"date-time":"2015-12-23T00:00:00Z","timestamp":1450828800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>An H+-ion sensor based on a gated lateral bipolar junction transistor (BJT) pair that can operate without the classical reference electrode is proposed. The device is a special type of ion-sensitive field-effect transistor (ISFET). Classical ISFETs have the advantage of miniaturization, but  they are difficult to fabricate by a single fabrication process because of the bulky and brittle reference electrode materials. Moreover, the reference electrodes need to be separated from the sensor device in some cases. The proposed device is composed of two gated lateral BJT components, one of which had a silicide layer while the other was without the layer. The two components were operated under the metal-oxide semiconductor field-effect transistor (MOSFET)-BJT hybrid mode, which can be controlled by emitter voltage and base current. Buffer solutions with different pH values were used as the sensing targets to verify the characteristics of the proposed device. Owing to their different sensitivities, both components could simultaneously detect the H+-ion concentration and function as a reference to each other. Per the experimental results, the sensitivity of the proposed device was found to be approximately 0.175 \u03bcA\/pH. This experiment demonstrates enormous potential to lower the cost of the ISFET-based sensor technology.<\/jats:p>","DOI":"10.3390\/s16010014","type":"journal-article","created":{"date-parts":[[2015,12,23]],"date-time":"2015-12-23T07:10:20Z","timestamp":1450854620000},"page":"14","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":4,"title":["Novel H+-Ion Sensor Based on a Gated Lateral BJT Pair"],"prefix":"10.3390","volume":"16","author":[{"given":"Heng","family":"Yuan","sequence":"first","affiliation":[{"name":"Science and Technology on Inertial Laboratory, Beihang University, No. 37 Xueyuan Road, Beijing 100191, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jixing","family":"Zhang","sequence":"additional","affiliation":[{"name":"Science and Technology on Inertial Laboratory, Beihang University, No. 37 Xueyuan Road, Beijing 100191, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chuangui","family":"Cao","sequence":"additional","affiliation":[{"name":"Science and Technology on Inertial Laboratory, Beihang University, No. 37 Xueyuan Road, Beijing 100191, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Gangyuan","family":"Zhang","sequence":"additional","affiliation":[{"name":"Science and Technology on Inertial Laboratory, Beihang University, No. 37 Xueyuan Road, Beijing 100191, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shaoda","family":"Zhang","sequence":"additional","affiliation":[{"name":"Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, No. 422 South Siming Road, Xiamen 361005, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2015,12,23]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1063\/1.4868177","article-title":"Research Update: Mesoporous sensor nanoarchitectionics","volume":"2","author":"Ariga","year":"2014","journal-title":"APL Mater."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"6203","DOI":"10.1039\/c2cs35475f","article-title":"Enzyme nanoarchitectonics: Organization and device application","volume":"42","author":"Ariga","year":"2013","journal-title":"Chem. Soc. Rev."},{"key":"ref_3","first-page":"9713","article-title":"Porphyrin-based sensor nanoarchitectonics in diverse physical detection modes","volume":"16","author":"Ishihara","year":"2014","journal-title":"Phys. Chem."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"36","DOI":"10.1246\/cl.130987","article-title":"Layer-by-layer nanoarchitectonics: Invention, innovation, and evolution","volume":"43","author":"Ariga","year":"2014","journal-title":"Chem. Lett."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"658","DOI":"10.1016\/j.snb.2014.12.025","article-title":"On a GaN-based ion sensitive field-effect transistor (ISFET) with a hydrogen peroxide surface treatment","volume":"209","author":"Chen","year":"2015","journal-title":"Sens. Actruators B"},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"1218","DOI":"10.1016\/j.talanta.2010.06.035","article-title":"A novel electrochemical sensor based on nano-structured film electrode for monitoring nitric oxide in living tissues","volume":"82","author":"Deng","year":"2010","journal-title":"Talanta"},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"208","DOI":"10.1016\/j.bios.2015.09.023","article-title":"Potentiometric responses of ion-selective microelectrode with bovine serum albumin adsorption","volume":"77","author":"Goda","year":"2016","journal-title":"Biosens. Bioelectron."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"424","DOI":"10.1016\/j.snb.2011.04.079","article-title":"Measurement of sub-nanometer molecular layers with ISFET without a reference electrode dependency","volume":"157","author":"Kokot","year":"2011","journal-title":"Sens. Actuators B"},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"293","DOI":"10.1016\/j.sna.2011.10.029","article-title":"Development of CNT-ISFET based pH sensing system using atomic force microscopy","volume":"173","author":"Dong","year":"2012","journal-title":"Sens. Actuators A"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"1491","DOI":"10.1109\/PROC.1964.3437","article-title":"Lateral complementary transistor structure for the simultaneous fabrication of functional blocks","volume":"10","author":"Lin","year":"1964","journal-title":"Proc. IEEE"},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"532","DOI":"10.1109\/63.321038","article-title":"An experimentally verified IGBT model implemented in the saber circuit simulator","volume":"9","author":"Hefner","year":"1994","journal-title":"IEEE Trans. Power Electron."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"1138","DOI":"10.1109\/LED.2008.2002809","article-title":"The characteristics of H+ ion-sensitive transistor driving with MOS hybrid mode operation","volume":"29","author":"Kwon","year":"2008","journal-title":"IEEE Electron Device Lett."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"478","DOI":"10.3938\/jkps.59.478","article-title":"Volatile organic compound gas sensor using a gated lateral bipolar junction transistor","volume":"59","author":"Yuan","year":"2011","journal-title":"J. Korean Phys. Soc."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"434","DOI":"10.1016\/j.bios.2011.07.062","article-title":"MOSFET-BJT hybrid mode of the gated lateral bipolar junction transistor for C-reactive protein detection","volume":"28","author":"Yuan","year":"2011","journal-title":"Biosens. Bioelectron."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"44","DOI":"10.1016\/j.snb.2013.01.086","article-title":"Highly sensitive ion sensor based on the MOSFET-BJT hybrid mode of a gated lateral BJT","volume":"181","author":"Yuan","year":"2013","journal-title":"Sens. Actuators B"},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"288","DOI":"10.1016\/j.snb.2012.11.029","article-title":"Room temperature VOC gas detection using a gated lateral BJT with an assembled solvatochromic dye","volume":"187","author":"Yuan","year":"2013","journal-title":"Sens. Actuators B"},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"020701:1","DOI":"10.1088\/0256-307X\/32\/2\/020701","article-title":"Low gate voltage operated multi-emitter-dot H+ ion-sensitive gated lateral bipolar junction transistor","volume":"32","author":"Yuan","year":"2015","journal-title":"Chin. Phys. Lett."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1080\/10408430390802431","article-title":"Metal silicide in CMOS technology: Past, present, and future trends","volume":"28","author":"Zhang","year":"2003","journal-title":"Crit. Rev. Solid State Mater. Sci."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"455","DOI":"10.1016\/j.matlet.2015.07.066","article-title":"Low temperature grown highly texture aluminum alloyed iron silicide on silicon substrate for opto-electronic applications","volume":"159","author":"Dalapati","year":"2015","journal-title":"Mater. Lett."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"71","DOI":"10.1016\/j.intermet.2015.08.009","article-title":"Texture anisotropy of higher manganese silicide following arc-melting and hot-pressing","volume":"68","author":"Sadia","year":"2016","journal-title":"Intermetallics"},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"373","DOI":"10.1109\/16.275223","article-title":"An improved analytical model for collector currents in lateral bipolar transistors","volume":"41","author":"Joardar","year":"1994","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"1171","DOI":"10.1246\/bcsj.20150143","article-title":"Templated synthesis for nanoarchitectured porous materials","volume":"88","author":"Malgras","year":"2015","journal-title":"Bull. Chem. Soc. Jpn."},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"8","DOI":"10.1109\/T-ED.1986.22429","article-title":"A generalized theory of an electrolyte-insulator-semiconductor field-effect transistor","volume":"33","author":"Fung","year":"1986","journal-title":"IEEE Electron Device Lett."},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"413","DOI":"10.1016\/S0956-5663(99)00008-1","article-title":"Protein detection with a novel ISFET-based zeta potential analyzer","volume":"14","author":"Koch","year":"1999","journal-title":"Biosens. Bioelectron."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"163","DOI":"10.1016\/j.snb.2011.10.002","article-title":"SPICE macromodel of silicon-on-insulator-field-effect-transistor-based biological sensors","volume":"161","author":"Fernandes","year":"2012","journal-title":"Sens. Actuators B"},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"824","DOI":"10.1016\/j.snb.2013.07.108","article-title":"Site-binding model as a basis for numerical evaluation of analytical parameters of capacitance-biosensors for formaldehyde and methylamine detection","volume":"188","author":"Chermiti","year":"2013","journal-title":"Sens. Actuators B"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/16\/1\/14\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T20:54:41Z","timestamp":1760216081000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/16\/1\/14"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,12,23]]},"references-count":26,"journal-issue":{"issue":"1","published-online":{"date-parts":[[2016,1]]}},"alternative-id":["s16010014"],"URL":"https:\/\/doi.org\/10.3390\/s16010014","relation":{},"ISSN":["1424-8220"],"issn-type":[{"type":"electronic","value":"1424-8220"}],"subject":[],"published":{"date-parts":[[2015,12,23]]}}}