{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,5]],"date-time":"2026-04-05T05:10:17Z","timestamp":1775365817521,"version":"3.50.1"},"reference-count":17,"publisher":"MDPI AG","issue":"3","license":[{"start":{"date-parts":[[2016,3,1]],"date-time":"2016-03-01T00:00:00Z","timestamp":1456790400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>In this study, a CMOS compatible capacitive humidity sensor structure was designed and fabricated on a 200 mm CMOS BEOL Line. A top Al interconnect layer was used as an electrode with a comb\/serpent structure, and graphene oxide (GO) was used as sensing material. XRD analysis was done which shows that GO sensing material has a strong and sharp (002) peak at about 10.278\u00b0, whereas graphite has (002) peak at about 26\u00b0. Device level CV and IV curves were measured in mini-environments at different relative humidity (RH) level, and saturated salt solutions were used to build these mini-environments. To evaluate the potential value of GO material in humidity sensor applications, a prototype humidity sensor was designed and fabricated by integrating the sensor with a dedicated readout ASIC and display\/calibration module. Measurements in different mini-environments show that the GO-based humidity sensor has higher sensitivity, faster recovery time and good linearity performance. Compared with a standard humidity sensor, the measured RH data of our prototype humidity sensor can match well that of the standard product.<\/jats:p>","DOI":"10.3390\/s16030314","type":"journal-article","created":{"date-parts":[[2016,3,1]],"date-time":"2016-03-01T11:07:19Z","timestamp":1456830439000},"page":"314","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":28,"title":["Fabrication and Evaluation of a Graphene Oxide-Based Capacitive Humidity Sensor"],"prefix":"10.3390","volume":"16","author":[{"given":"Jinfeng","family":"Feng","sequence":"first","affiliation":[{"name":"School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China"}]},{"given":"Xiaoxu","family":"Kang","sequence":"additional","affiliation":[{"name":"Process Technology Department, Shanghai IC R&amp;D Center, Shanghai 201210, China"}]},{"given":"Qingyun","family":"Zuo","sequence":"additional","affiliation":[{"name":"Process Technology Department, Shanghai IC R&amp;D Center, Shanghai 201210, China"}]},{"given":"Chao","family":"Yuan","sequence":"additional","affiliation":[{"name":"Process Technology Department, Shanghai IC R&amp;D Center, Shanghai 201210, China"}]},{"given":"Weijun","family":"Wang","sequence":"additional","affiliation":[{"name":"Process Technology Department, Shanghai IC R&amp;D Center, Shanghai 201210, China"}]},{"given":"Yuhang","family":"Zhao","sequence":"additional","affiliation":[{"name":"Process Technology Department, Shanghai IC R&amp;D Center, Shanghai 201210, China"}]},{"given":"Limin","family":"Zhu","sequence":"additional","affiliation":[{"name":"PIE Department III, Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, China"}]},{"given":"Hanwei","family":"Lu","sequence":"additional","affiliation":[{"name":"PIE Department III, Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, China"}]},{"given":"Juying","family":"Chen","sequence":"additional","affiliation":[{"name":"PIE Department III, Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, China"}]}],"member":"1968","published-online":{"date-parts":[[2016,3,1]]},"reference":[{"key":"ref_1","unstructured":"International Technology Roadmap for Semiconductors (ITRS). 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