{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,20]],"date-time":"2025-11-20T06:29:52Z","timestamp":1763620192099,"version":"build-2065373602"},"reference-count":17,"publisher":"MDPI AG","issue":"4","license":[{"start":{"date-parts":[[2016,3,24]],"date-time":"2016-03-24T00:00:00Z","timestamp":1458777600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>In this investigation, anodic aluminum oxide (AAO) with arrayed and regularly arranged nanopores is used as a template in the high-vacuum die casting of molten zinc metal (Zn) into the nanopores. The proposed technique yields arrayed Zn nanowires with an aspect ratio of over 600. After annealing, arrayed zinc oxide (ZnO) nanowires are obtained. Varying the anodizing time yields AAO templates with thicknesses of approximately 50 \u03bcm, 60 \u03bcm, and 70 \u03bcm that can be used in the fabrication of nanowires of three lengths with high aspect ratios. Experimental results reveal that a longer nanowire generates a greater measured piezoelectric current. The ZnO nanowires that are fabricated using an alumina template are anodized for 7 h and produce higher piezoelectric current of up to 69 pA.<\/jats:p>","DOI":"10.3390\/s16040431","type":"journal-article","created":{"date-parts":[[2016,3,24]],"date-time":"2016-03-24T11:55:16Z","timestamp":1458820516000},"page":"431","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":12,"title":["Fabrication of ZnO Nanowires Arrays by Anodization and High-Vacuum Die Casting Technique, and Their Piezoelectric Properties"],"prefix":"10.3390","volume":"16","author":[{"given":"Chin-Guo","family":"Kuo","sequence":"first","affiliation":[{"name":"Department of Industrial Education, National Taiwan Normal University, Taipei 10610, Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ho","family":"Chang","sequence":"additional","affiliation":[{"name":"Graduate Institute of Manufacturing Technology, National Taipei University of Technology, Taipei 10608, Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jian-Hao","family":"Wang","sequence":"additional","affiliation":[{"name":"Graduate Institute of Manufacturing Technology, National Taipei University of Technology, Taipei 10608, Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2016,3,24]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"1659","DOI":"10.1557\/JMR.1996.0208","article-title":"Highly conducting transparent thin films based on zinc oxide","volume":"11","author":"Wang","year":"1996","journal-title":"J. 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