{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T04:19:15Z","timestamp":1760242755177,"version":"build-2065373602"},"reference-count":25,"publisher":"MDPI AG","issue":"5","license":[{"start":{"date-parts":[[2016,4,27]],"date-time":"2016-04-27T00:00:00Z","timestamp":1461715200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Institute of Gas Turbine (Tsinghua University)"},{"name":"Tsinghua-Berkeley funds"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>The strain sensitivity of the Aluminum Nitride (AlN)\/Silicon (Si) surface acoustic wave resonator (SAWR) is predicted based on a modeling method introduced in this work, and further compared with experimental results. The strain influence on both the period of the inter-digital transducer (IDT) and the sound velocity is taken into consideration when modeling the strain response. From the modeling results, AlN and Si have opposite responses to strain; hence, for the AlN\/Si-based SAWR, both a positive and a negative strain coefficient factor can be achieved by changing the thickness of the AlN layer, which is confirmed by strain response testing based on a silicon cantilever structure with two AlN configurations (1 \u03bcm and 3 \u03bcm in thickness, respectively).<\/jats:p>","DOI":"10.3390\/s16050603","type":"journal-article","created":{"date-parts":[[2016,4,27]],"date-time":"2016-04-27T12:22:05Z","timestamp":1461759725000},"page":"603","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Prediction of the Strain Response of Poly-AlN\/(100)Si Surface Acoustic Wave Resonator and Experimental Analysis"],"prefix":"10.3390","volume":"16","author":[{"given":"Shuo","family":"Chen","sequence":"first","affiliation":[{"name":"Department of Precision Instrument, Tsinghua University, Beijing 100084, China"},{"name":"State Key Laboratory of Precision Measurement Technology and Instruments, Tsinghua University, Beijing 100084, China"}]},{"given":"Zheng","family":"You","sequence":"additional","affiliation":[{"name":"Department of Precision Instrument, Tsinghua University, Beijing 100084, China"},{"name":"State Key Laboratory of Precision Measurement Technology and Instruments, Tsinghua University, Beijing 100084, China"}]}],"member":"1968","published-online":{"date-parts":[[2016,4,27]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"364","DOI":"10.1016\/j.sna.2012.09.012","article-title":"High precision pressure sensors based on SAW devices in the GHz range","volume":"189","author":"Iriarte","year":"2013","journal-title":"Sens. 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