{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T04:19:05Z","timestamp":1760242745868,"version":"build-2065373602"},"reference-count":15,"publisher":"MDPI AG","issue":"6","license":[{"start":{"date-parts":[[2016,5,25]],"date-time":"2016-05-25T00:00:00Z","timestamp":1464134400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Spanish Ministry for Education","award":["Jos\u00e9 Castillejo (CAS14\/00326)"],"award-info":[{"award-number":["Jos\u00e9 Castillejo (CAS14\/00326)"]}]},{"name":"Spanish Ministry for Economy and Competitiveness (MICINN)","award":["TEC2011-23211","TEC2014-52840-R"],"award-info":[{"award-number":["TEC2011-23211","TEC2014-52840-R"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>A monolithically integrated optoelectronic receiver with a low-capacitance on-chip pin photodiode is presented. The receiver is fabricated in a 0.35 \u03bcm opto-CMOS process fed at 3.3 V and due to the highly effective integrated pin photodiode it operates at \u03bcW. A regenerative latch acting as a sense amplifier leads in addition to a low electrical power consumption. At 400 Mbit\/s, sensitivities of \u221226.0 dBm and \u221225.5 dBm are achieved, respectively, for \u03bb = 635 nm and \u03bb = 675 nm (BER = 10\u22129 ) with an energy efficiency of 2 pJ\/bit.<\/jats:p>","DOI":"10.3390\/s16060761","type":"journal-article","created":{"date-parts":[[2016,5,25]],"date-time":"2016-05-25T09:15:07Z","timestamp":1464167707000},"page":"761","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Synchronous OEIC Integrating Receiver for Optically Reconfigurable Gate Arrays"],"prefix":"10.3390","volume":"16","author":[{"given":"Carlos","family":"S\u00e1nchez-Azqueta","sequence":"first","affiliation":[{"name":"Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology, Gu\u00dfhausstra\u00dfe 25\/354, Vienna 1040, Austria"},{"name":"Group of Electronic Design, Arag\u00f3n Institute of Engineering Research, Universidad de Zaragoza, Pedro Cerbuna 12, Zaragoza 50009, Spain"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bernhard","family":"Goll","sequence":"additional","affiliation":[{"name":"Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology, Gu\u00dfhausstra\u00dfe 25\/354, Vienna 1040, Austria"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Santiago","family":"Celma","sequence":"additional","affiliation":[{"name":"Group of Electronic Design, Arag\u00f3n Institute of Engineering Research, Universidad de Zaragoza, Pedro Cerbuna 12, Zaragoza 50009, Spain"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Horst","family":"Zimmermann","sequence":"additional","affiliation":[{"name":"Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology, Gu\u00dfhausstra\u00dfe 25\/354, Vienna 1040, Austria"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2016,5,25]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Watanabe, M., Fujime, R., and Kobayashi, F. 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