{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,12]],"date-time":"2026-02-12T08:11:12Z","timestamp":1770883872508,"version":"3.50.1"},"reference-count":20,"publisher":"MDPI AG","issue":"9","license":[{"start":{"date-parts":[[2016,8,30]],"date-time":"2016-08-30T00:00:00Z","timestamp":1472515200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Ministry of science and technology, Taiwan, ROC","award":["104-2221-E-182-074"],"award-info":[{"award-number":["104-2221-E-182-074"]}]},{"name":"Ministry of science and technology, Taiwan, ROC","award":["104-2221-E-182-057"],"award-info":[{"award-number":["104-2221-E-182-057"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>This paper reports a detailed analysis of the drain current modulation of a single-drain normal-gate n channel metal-oxide semiconductor field effect transistor (n-MOSFET) under an on-chip magnetic field. A single-drain n-MOSFET has been fabricated and placed in the center of a square-shaped metal loop which generates the on-chip magnetic field. The proposed device designed is much smaller in size with respect to the metal loop, which ensures that the generated magnetic field is approximately uniform. The change of drain current and change of bulk current per micron device width has been measured. The result shows that the difference drain current is about 145 \u00b5A for the maximum applied magnetic field. Such changes occur from the applied Lorentz force to push out the carriers from the channel. Based on the drain current difference, the change in effective mobility has been detected up to 4.227%. Furthermore, a detailed investigation reveals that the device behavior is quite different in subthreshold and saturation region. A change of 50.24 \u00b5A bulk current has also been measured. Finally, the device has been verified for use as a magnetic sensor with sensitivity 4.084% (29.6 T\u22121), which is very effective as compared to other previously reported works for a single device.<\/jats:p>","DOI":"10.3390\/s16091389","type":"journal-article","created":{"date-parts":[[2016,8,30]],"date-time":"2016-08-30T09:56:03Z","timestamp":1472550963000},"page":"1389","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Drain Current Modulation of a Single Drain MOSFET by Lorentz Force for Magnetic Sensing Application"],"prefix":"10.3390","volume":"16","author":[{"given":"Prasenjit","family":"Chatterjee","sequence":"first","affiliation":[{"name":"Graduate Institute of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hwang-Cherng","family":"Chow","sequence":"additional","affiliation":[{"name":"Graduate Institute of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wu-Shiung","family":"Feng","sequence":"additional","affiliation":[{"name":"Graduate Institute of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2016,8,30]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"620","DOI":"10.3390\/s16050620","article-title":"A magnetic field sensor based on a magnetic fluid-filled FP-FBG structure","volume":"16","author":"Xia","year":"2016","journal-title":"Sensors"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"3896","DOI":"10.3390\/s150203896","article-title":"Nano-magnetic immunosensor based on staphylococcus protein A and the amplification effect of HRP-conjugated phage antibody","volume":"15","author":"Mu","year":"2015","journal-title":"Sensors"},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"78","DOI":"10.3390\/s16010078","article-title":"Dynamic vehicle detection via the use of magnetic field sensors","volume":"16","author":"Markevicius","year":"2016","journal-title":"Sensors"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"14727","DOI":"10.3390\/s150614727","article-title":"A 3-axis miniature magnetic sensor based on a planar fluxgate magnetometer with an orthogonal fluxguide","volume":"15","author":"Lu","year":"2015","journal-title":"Sensors"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"339","DOI":"10.1016\/0038-1101(66)90148-1","article-title":"The hall effect and related phenomena","volume":"9","author":"Beer","year":"1966","journal-title":"Solid-State Electron."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"571","DOI":"10.1016\/0038-1101(66)90172-9","article-title":"A metal-oxide-semiconductor (MOS) hall element","volume":"9","author":"Gallagher","year":"1966","journal-title":"Solid-State Electron."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"1107","DOI":"10.1109\/PROC.1986.13597","article-title":"Integrated semiconductor magnetic field sensors","volume":"74","author":"Baltes","year":"1986","journal-title":"Proc. IEEE"},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"426","DOI":"10.1109\/JSSC.1983.1051967","article-title":"A cmos magnetic field sensor","volume":"18","author":"Popovic","year":"1983","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"819","DOI":"10.1109\/JSSC.1985.1052390","article-title":"Modeling of a dual-drain nmos magnetic-field sensor","volume":"20","author":"Nathan","year":"1985","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"1212","DOI":"10.1109\/T-ED.1985.22103","article-title":"Two-dimensional numerical modeling of magnetic-field sensors in cmos technology","volume":"32","author":"Nathan","year":"1985","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"89","DOI":"10.1109\/16.737446","article-title":"An analytical model of magfet sensitivity including secondary effects using a continuous description of the geometric correction factor g","volume":"46","author":"Langheinrich","year":"1999","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"2237","DOI":"10.1109\/TED.2004.839869","article-title":"Analysis of split-drain magfets","volume":"51","author":"Klima","year":"2004","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_13","doi-asserted-by":"crossref","unstructured":"Rezaei, N., Dehghani, R., Jalili, A., and Mosahebfard, A. (2013, January 14\u201316). Cmos Magnetic Sensor with Magfet. Proceedings of the IEEE 21st Iranian Conference on Electrical Engineering (ICEE), Mashhad, Iran.","DOI":"10.1109\/IranianCEE.2013.6599582"},{"key":"ref_14","unstructured":"Donoval, M., Da\u0159\u00ed\u010dek, M., Stopjakov\u00e1, V., and Marek, J. (September, January 31). On-chip supply current monitoring units using magnetic force sensing. Proceedings of the IEEE 15th International Conference on Electronics, Circuits and Systems, St. Julien\u2019s, Malta."},{"key":"ref_15","doi-asserted-by":"crossref","unstructured":"Frick, V., Nguyen, H.B., and Hebrard, L. (2010, January 12). A novel chopping-spinning magfet device. Proceedings of the 2010 17th IEEE International Conference on Electronics, Circuits and Systems, Athens, Greece.","DOI":"10.1109\/ICECS.2010.5724637"},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"109","DOI":"10.1016\/S0924-4247(96)01399-4","article-title":"An offset-trimmable array of magnetic-field-sensitive MOS transistors (magfets)","volume":"58","author":"Ning","year":"1997","journal-title":"Sens. Actuators A Phys."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"3772","DOI":"10.1063\/1.1812382","article-title":"Modification of drain current on metal-oxide-semiconductor field-effect transistor by magnetic field induced by remanent magnetization","volume":"85","author":"Wakiya","year":"2004","journal-title":"Appl. Phys. Lett."},{"key":"ref_18","unstructured":"Gabara, T. (1997, January 7\u201310). Lorentz force MOS transistor. Proceedings of the Tenth Annual IEEE International ASIC Conference and Exhibit, Portland, OR, USA."},{"key":"ref_19","unstructured":"Griffiths, D.J. (1999). Introduction to Electrodynamics, Prentice-Hall."},{"key":"ref_20","doi-asserted-by":"crossref","unstructured":"Sze, S.M., and Ng, K.K. (2006). Physics of Semiconductor Devices, John Wiley & Sons.","DOI":"10.1002\/0470068329"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/16\/9\/1389\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T19:29:32Z","timestamp":1760210972000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/16\/9\/1389"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,8,30]]},"references-count":20,"journal-issue":{"issue":"9","published-online":{"date-parts":[[2016,9]]}},"alternative-id":["s16091389"],"URL":"https:\/\/doi.org\/10.3390\/s16091389","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2016,8,30]]}}}