{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,18]],"date-time":"2026-06-18T16:12:37Z","timestamp":1781799157306,"version":"3.54.5"},"reference-count":25,"publisher":"MDPI AG","issue":"11","license":[{"start":{"date-parts":[[2016,10,31]],"date-time":"2016-10-31T00:00:00Z","timestamp":1477872000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100004281","name":"Narodowe Centrum Nauki","doi-asserted-by":"publisher","award":["Harmonia-UMO-2012\/04\/M\/ST7\/00799"],"award-info":[{"award-number":["Harmonia-UMO-2012\/04\/M\/ST7\/00799"]}],"id":[{"id":"10.13039\/501100004281","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001871","name":"Funda\u00e7\u00e3o para a Ci\u00eancia e a Tecnologia","doi-asserted-by":"publisher","award":["EXCL\/CTM-NAN\/0441\/2012"],"award-info":[{"award-number":["EXCL\/CTM-NAN\/0441\/2012"]}],"id":[{"id":"10.13039\/501100001871","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>As single tunneling magnetoresistive (TMR) sensor performance in modern high-speed applications is limited by breakdown voltage and saturation of the sensitivity, for higher voltage applications (i.e., compatible to 1.8 V, 3.3 V or 5 V standards) practically only a series connection can be applied. Thus, in this study we focused on sensitivity, 3 dB bandwidth and sensitivity-bandwidth product (SBP) dependence on the DC bias voltage in single and series-connected TMR sensors. We show that, below breakdown voltage, the strong bias influence on sensitivity and the 3 dB frequency of a single sensor results in higher SBP than in a series connection. However, the sensitivity saturation limits the single sensor SBP which, under 1 V, reaches the same level of 2000 MHz\u2219V\/T as in a series connection. Above the single sensor breakdown voltage, linear sensitivity dependence on the bias and the constant 3 dB bandwidth of the series connection enable increasing its SBP up to nearly 10,000 MHz\u2219V\/T under 5 V. Thus, although by tuning bias voltage it is possible to control the sensitivity-bandwidth product, the choice between the single TMR sensor and the series connection is crucial for the optimal performance in the high frequency range.<\/jats:p>","DOI":"10.3390\/s16111821","type":"journal-article","created":{"date-parts":[[2016,10,31]],"date-time":"2016-10-31T11:09:46Z","timestamp":1477912186000},"page":"1821","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":6,"title":["Sensitivity and 3 dB Bandwidth in Single and Series-Connected Tunneling Magnetoresistive Sensors"],"prefix":"10.3390","volume":"16","author":[{"given":"Micha\u0142","family":"D\u0105bek","sequence":"first","affiliation":[{"name":"Department of Electronics, AGH University of Science and Technology, Krakow 30-059, Poland"},{"name":"Silicon Creations, 49 Highway 23 NE, Suwanee 30024, GA, USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7995-7416","authenticated-orcid":false,"given":"Piotr","family":"Wi\u015bniowski","sequence":"additional","affiliation":[{"name":"Department of Electronics, AGH University of Science and Technology, Krakow 30-059, Poland"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tomasz","family":"Stobiecki","sequence":"additional","affiliation":[{"name":"Department of Electronics, AGH University of Science and Technology, Krakow 30-059, Poland"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jerzy","family":"Wrona","sequence":"additional","affiliation":[{"name":"Singulus Technologies AG, Kahl am Main 63796, Germany"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6913-6529","authenticated-orcid":false,"given":"Susana","family":"Cardoso","sequence":"additional","affiliation":[{"name":"INESC-MN and IN, Lisbon 1000-029, Portugal"},{"name":"Physics Department, Instituto Superior Tecnico, Universidade de Lisboa, Lisbon 1600-276, Portugal"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Paulo","family":"Freitas","sequence":"additional","affiliation":[{"name":"INESC-MN and IN, Lisbon 1000-029, Portugal"},{"name":"Physics Department, Instituto Superior Tecnico, Universidade de Lisboa, Lisbon 1600-276, Portugal"},{"name":"INL-International Iberian Nanotechnology Laboratory, Avenida Mestre Jos\u00e9 Veiga s\/n, Braga 4715-330, Portugal"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2016,10,31]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"3509","DOI":"10.1109\/TPEL.2012.2227341","article-title":"Novel single current sensor topology for venturini controlled direct matrix converters","volume":"28","author":"Metidji","year":"2013","journal-title":"IEEE Trans. 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