{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,17]],"date-time":"2026-06-17T01:57:28Z","timestamp":1781661448410,"version":"3.54.5"},"reference-count":35,"publisher":"MDPI AG","issue":"3","license":[{"start":{"date-parts":[[2017,2,28]],"date-time":"2017-02-28T00:00:00Z","timestamp":1488240000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>The frame rate of the digital high-speed video camera was 2000 frames per second (fps) in 1989, and has been exponentially increasing. A simulation study showed that a silicon image sensor made with a 130 nm process technology can achieve about 1010 fps. The frame rate seems to approach the upper bound. Rayleigh proposed an expression on the theoretical spatial resolution limit when the resolution of lenses approached the limit. In this paper, the temporal resolution limit of silicon image sensors was theoretically analyzed. It is revealed that the limit is mainly governed by mixing of charges with different travel times caused by the distribution of penetration depth of light. The derived expression of the limit is extremely simple, yet accurate. For example, the limit for green light of 550 nm incident to silicon image sensors at 300 K is 11.1 picoseconds. Therefore, the theoretical highest frame rate is 90.1 Gfps (about 1011 fps)<\/jats:p>","DOI":"10.3390\/s17030483","type":"journal-article","created":{"date-parts":[[2017,2,28]],"date-time":"2017-02-28T10:57:52Z","timestamp":1488279472000},"page":"483","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":46,"title":["The Theoretical Highest Frame Rate of Silicon  Image Sensors"],"prefix":"10.3390","volume":"17","author":[{"given":"Takeharu","family":"Etoh","sequence":"first","affiliation":[{"name":"Graduate School of Engineering, Osaka University, 2-1 Yamada-Oka, Suita, Osaka 565-0871, Japan"},{"name":"Graduate School of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Anh","family":"Nguyen","sequence":"additional","affiliation":[{"name":"Graduate School of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yoshinari","family":"Kamakura","sequence":"additional","affiliation":[{"name":"Graduate School of Engineering, Osaka University, 2-1 Yamada-Oka, Suita, Osaka 565-0871, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kazuhiro","family":"Shimonomura","sequence":"additional","affiliation":[{"name":"Graduate School of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Thi","family":"Le","sequence":"additional","affiliation":[{"name":"Graduate School of Engineering, Osaka University, 2-1 Yamada-Oka, Suita, Osaka 565-0871, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Nobuya","family":"Mori","sequence":"additional","affiliation":[{"name":"Graduate School of Engineering, Osaka University, 2-1 Yamada-Oka, Suita, Osaka 565-0871, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2017,2,28]]},"reference":[{"key":"ref_1","unstructured":"Wikipedia: Saccade (Timing and Kinematics). Available online: https:\/\/en.wikipedia.org\/wiki\/Saccade."},{"key":"ref_2","doi-asserted-by":"crossref","unstructured":"Etoh, T.G., and Takehara, K. (1995). Needs, requirements, and new proposals for ultra-high-speed video cameras in Japan. Proc. SPIE, 2513.","DOI":"10.1117\/12.209606"},{"key":"ref_3","first-page":"11","article-title":"Users\u2019 requirements and specification on high-speed video cameras","volume":"23","author":"Takano","year":"2003","journal-title":"J. Visual. Soc. Jpn."},{"key":"ref_4","first-page":"543","article-title":"High-speed video camera operating at 4500 fps","volume":"46","author":"Etoh","year":"1992","journal-title":"J. Inst. Telev. Eng. Jpn."},{"key":"ref_5","unstructured":"Etoh, T.G., Poggemann, D., Ruckelshausen, A., Theuwissen, A., Kreider, G., Folkerts, O.-H., Mutoh, H., Kondo, Y., Maruno, H., and Takubo, K. (2002, January 3\u20137). A CCD image sensor of 1 Mframes\/s for continuous image capturing of 103 frames. Proceedings of the 2002 IEEE International Solid-State Circuits Conference, (ISSCC 2002), Digest of Technical Papers, San Francisco, CA, USA."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"815","DOI":"10.1364\/OL.27.000815","article-title":"Observation of light propagation by holography with a picosecond pulsed laser","volume":"27","author":"Kubota","year":"2002","journal-title":"Opt. Lett."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"5026","DOI":"10.1063\/1.1626013","article-title":"Brandaris 128: A digital 25 million frames per second camera with 128 highly sensitive frames","volume":"74","author":"Chin","year":"2003","journal-title":"Rev. Sci. Instrum."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"638","DOI":"10.1038\/nphoton.2007.222","article-title":"Ultrafast Imagination","volume":"1","author":"Sandhu","year":"2007","journal-title":"Nat. Photonics"},{"key":"ref_9","doi-asserted-by":"crossref","unstructured":"Etoh, T.G., Nguyen, D.H., Dao, V.T.S., Vo Le, C., Tanaka, M., Takehara, K., Okinaka, T., van Kuijk, H., Klaasens, W., and Bosiers, J. (2011, January 20\u201324). A 16 Mfps 165 kpixel backside-illuminated CCD. Proceedings of the IEEE International Solid-State Circuits Conference (ISSCC 2011), Digest of Technical Papers, San Francisco, CA, USA.","DOI":"10.1109\/ISSCC.2011.5746372"},{"key":"ref_10","doi-asserted-by":"crossref","unstructured":"Arai, T., Yonai, J., Hayashida, T., Ohtake, H., van Kuijk, H., and Etoh, T.G. (2013). Back-Side-Illuminated image sensor with burst capturing speed of 5.2 Tpixels per second. Proc. SPIE, 8659.","DOI":"10.1117\/12.2003496"},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"329","DOI":"10.1109\/JSSC.2012.2219685","article-title":"A global-shutter CMOS image sensor with readout speed of 1 Tpixel\/s burst and 780 Mpixel\/s continuous","volume":"48","author":"Tochigi","year":"2013","journal-title":"IEEE J. Solid State Circuits"},{"key":"ref_12","unstructured":"Etoh, T.G., Dao, V.T.S., Nguyen, A.Q., and Hayahsi, N. (2015, January 4\u20138). Design of an Image Signal Accumulation Sensor with 1120 frames operating at 100 Mfps. Proceedings of the 15th International Conference on Advanced Technology in Experimental Mechanics, Toyohashi, Japan."},{"key":"ref_13","unstructured":"Kosonocky, W.F., Guand, Y., Chao, Y., Kabra, R.K., Xie, L., Lawrence, J.L., Mastrocolla, V., Shallcross, F.V., and Patel, V. (1996, January 8\u201310). 360\/spl times\/360-element very-high-frame-rate burst image sensor. Proceedings of the International Solid-State Circuits Conference, San Francisco, CA, USA."},{"key":"ref_14","doi-asserted-by":"crossref","unstructured":"Honour, J. (1997). Electronic camera for simultaneous framing and streak recording. Proc. SPIE, 2869.","DOI":"10.1117\/12.273467"},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"745","DOI":"10.1063\/1.1147690","article-title":"Ultrafast two-dimensional X-ray imaging with X-ray streak cameras for fusion research (invited)","volume":"68","author":"Shiraga","year":"1997","journal-title":"Rev. Sci. Instum."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"10E116","DOI":"10.1063\/1.4732849","article-title":"Dilation X-ray imager a new\/faster gated X-ray imager for the NIF","volume":"83","author":"Nagel","year":"2012","journal-title":"Rev. Sci. Instrum."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"4640","DOI":"10.3390\/s130404640","article-title":"Toward One Giga Frames per Second\u2014Evolution of in-Situ Storage Image Sensors","volume":"13","author":"Etoh","year":"2013","journal-title":"Sensors"},{"key":"ref_18","doi-asserted-by":"crossref","unstructured":"Etoh, T.G., Dao, V.T.S., Shimonomura, K., Charbon, E., Zhang, C., Kamakura, Y., and Matsuoka, T. (2014, January 15\u201317). Toward 1Gfps: Evolution of Ultra-high-speed Image Sensors-ISIS, BSI, Multi-Collection Gates, and 3D-stacking. Proceedings of the International Electric Devices Meeting, San Francisco, CA, USA.","DOI":"10.1109\/IEDM.2014.7047023"},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"695","DOI":"10.1038\/nphoton.2014.163","article-title":"Sequentially timed all-optical mapping photography (STAMP)","volume":"8","author":"Nakagawa","year":"2014","journal-title":"Nat. Photonics"},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"74","DOI":"10.1038\/nature14005","article-title":"Single-shot compressed ultrafast photography at one hundred billion frames per second","volume":"516","author":"Gao","year":"2014","journal-title":"Nature"},{"key":"ref_21","unstructured":"Dao, V.T.S., Etoh, T.G., Shimonomura, K., Nguyen, A.Q., Hayashi, N., Kamakura, Y., Zhang, C., Charbon, E., Goetschalckx, P., and Haspeslagh, L. (2015, January 8\u201311). Toward 10 Gfps: Factors limiting the Frame Rate of the BSI MCG Image Sensor. Proceedings of the International Image Sensor Workshop, Vaals, The Netherlands."},{"key":"ref_22","doi-asserted-by":"crossref","unstructured":"Claus, L., Fang, L., Kay, R., Kimmel, M., Long, J., Robertson, G., Sanchez, M., Stahoviak, J., Trotter, D., and Porter, J.L. (2015). An overview of the Ultrafast X-ray Imager (UXI) program at Sandia Labs. Proc. SPIE, 9591.","DOI":"10.1117\/12.2188336"},{"key":"ref_23","doi-asserted-by":"crossref","unstructured":"Mochizuki, F., Kagawa, K., Okihara, S.I., Seo, M.W., Zhang, B., Takasawa, T., Yasutomi, K., and Kawahito, S. (2015, January 22\u201326). Single-shot 200Mfps 5x3-aperture compressive CMOS imager. Proceedings of the 2015 IEEE International Solid-State Circuits Conference, (ISSCC 2015), Digest of Technical Papers, San Francisco, CA, USA.","DOI":"10.1109\/ISSCC.2015.7062953"},{"key":"ref_24","doi-asserted-by":"crossref","unstructured":"Hornak, J. (2002). Encyclopedia of Imaging Science and Technology, Wiley & Sons. [1st ed.].","DOI":"10.1002\/0471443395"},{"key":"ref_25","unstructured":"Turchetta, R. (2015, January 8\u201311). Notes about the limits of ultra-high speed solid-state imagers. Proceedings of the International Image Sensor Workshop, Vaals, The Netherlands."},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"49","DOI":"10.1109\/TED.2015.2442435","article-title":"Device Simulations for Ultrahigh-Speed and High-Voltage Image Sensors","volume":"63","author":"Mutoh","year":"2016","journal-title":"IEEE Trans. Electron. Devices"},{"key":"ref_27","unstructured":"Jones, M.H., and Jones, S.H. Optical Properties of Silicon, Virginia Semiconductor, Inc. Available online: http:\/\/www.univie.ac.at\/photovoltaik\/vorlesung\/ss2014\/unit4\/optical_properties_silicon.pdf."},{"key":"ref_28","first-page":"114","article-title":"Simulation analysis of a backside-illuminated multi-collection-gate image sensor","volume":"2","author":"Dao","year":"2014","journal-title":"ITE Trans. Media Technol. Appl."},{"key":"ref_29","unstructured":"Wikipedia: Angular Resolution (Explanation). Available online: https:\/\/en.wikipedia.org\/wiki\/Angular_resolution."},{"key":"ref_30","unstructured":"The Rayleigh Criterion. Available online: http:\/\/hyperphysics.phy-astr.gsu.edu\/hbase\/phyopt\/Raylei.html#c1."},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"297","DOI":"10.1063\/1.355849","article-title":"A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact ionization model","volume":"75","author":"Kunikiyo","year":"1994","journal-title":"J. Appl. Phys."},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"297","DOI":"10.1103\/PhysRevB.12.2265","article-title":"Electron drift velocity in silicon","volume":"12","author":"Canali","year":"1975","journal-title":"Phys. Rev. B"},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"278","DOI":"10.1063\/1.88465","article-title":"Highfield diffusion of electrons in silicon","volume":"27","author":"Canali","year":"1975","journal-title":"Appl. Phys. Lett."},{"key":"ref_34","doi-asserted-by":"crossref","unstructured":"Sze, M. (2007). Physics of Semiconductor Devices, Wiley & Sons. [3rd ed.].","DOI":"10.1002\/0470068329"},{"key":"ref_35","unstructured":"Temperature Dependence of Silicon Absorption Length (Figure 2), Available online: http:\/\/snap.lbl.gov\/ccdweb\/ccd_data.html."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/17\/3\/483\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T18:29:25Z","timestamp":1760207365000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/17\/3\/483"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,2,28]]},"references-count":35,"journal-issue":{"issue":"3","published-online":{"date-parts":[[2017,3]]}},"alternative-id":["s17030483"],"URL":"https:\/\/doi.org\/10.3390\/s17030483","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2017,2,28]]}}}