{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,14]],"date-time":"2025-10-14T20:08:08Z","timestamp":1760472488476,"version":"build-2065373602"},"reference-count":16,"publisher":"MDPI AG","issue":"5","license":[{"start":{"date-parts":[[2017,5,5]],"date-time":"2017-05-05T00:00:00Z","timestamp":1493942400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>A fluorine-terminated polycrystalline boron-doped diamond surface is successfully employed as a pH-insensitive SGFET (solution-gate field-effect transistor) for an all-solid-state pH sensor. The fluorinated polycrystalline boron-doped diamond (BDD) channel possesses a pH-insensitivity of less than 3mV\/pH compared with a pH-sensitive oxygenated channel. With differential FET (field-effect transistor) sensing, a sensitivity of 27 mv\/pH was obtained in the pH range of 2\u201310; therefore, it demonstrated excellent performance for an all-solid-state pH sensor with a pH-sensitive oxygen-terminated polycrystalline BDD SGFET and a platinum quasi-reference electrode, respectively.<\/jats:p>","DOI":"10.3390\/s17051040","type":"journal-article","created":{"date-parts":[[2017,5,5]],"date-time":"2017-05-05T10:31:08Z","timestamp":1493980268000},"page":"1040","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":8,"title":["An All-Solid-State pH Sensor Employing Fluorine-Terminated Polycrystalline Boron-Doped Diamond as a pH-Insensitive Solution-Gate Field-Effect Transistor"],"prefix":"10.3390","volume":"17","author":[{"given":"Yukihiro","family":"Shintani","sequence":"first","affiliation":[{"name":"Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan"},{"name":"R&amp;D Departent, Innovation Center, MK-Hdqrs, Yokogawa Electric Corporation, Japan, 2-9-32 Nakacho, Musashino, Tokyo 180-8750, Japan"}]},{"given":"Mikinori","family":"Kobayashi","sequence":"additional","affiliation":[{"name":"Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan"}]},{"given":"Hiroshi","family":"Kawarada","sequence":"additional","affiliation":[{"name":"Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan"},{"name":"The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051, Japan"}]}],"member":"1968","published-online":{"date-parts":[[2017,5,5]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"70","DOI":"10.1109\/TBME.1970.4502688","article-title":"Development of an ion-sensitive solid-state device for neurophysiological measurements","volume":"17","author":"Bergveld","year":"1970","journal-title":"IEEE Trans. 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