{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,17]],"date-time":"2026-02-17T14:09:06Z","timestamp":1771337346745,"version":"3.50.1"},"reference-count":27,"publisher":"MDPI AG","issue":"8","license":[{"start":{"date-parts":[[2017,7,29]],"date-time":"2017-07-29T00:00:00Z","timestamp":1501286400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>This paper reviews and compares the thermal and noise characterization of CMOS (complementary metal-oxide-semiconductor) SOI (Silicon on insulator) transistors and lateral diodes used as temperature and thermal sensors. DC analysis of the measured sensors and the experimental results in a broad (300 K up to 550 K) temperature range are presented. It is shown that both sensors require small chip area, have low power consumption, and exhibit linearity and high sensitivity over the entire temperature range. However, the diode\u2019s sensitivity to temperature variations in CMOS-SOI technology is highly dependent on the diode\u2019s perimeter; hence, a careful calibration for each fabrication process is needed. In contrast, the short thermal time constant of the electrons in the transistor\u2019s channel enables measuring the instantaneous heating of the channel and to determine the local true temperature of the transistor. This allows accurate \u201con-line\u201d temperature sensing while no additional calibration is needed. In addition, the noise measurements indicate that the diode\u2019s small area and perimeter causes a high 1\/f noise in all measured bias currents. This is a severe drawback for the sensor accuracy when using the sensor as a thermal sensor; hence, CMOS-SOI transistors are a better choice for temperature sensing.<\/jats:p>","DOI":"10.3390\/s17081739","type":"journal-article","created":{"date-parts":[[2017,8,1]],"date-time":"2017-08-01T03:30:06Z","timestamp":1501558206000},"page":"1739","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":10,"title":["Nanometric Integrated Temperature and Thermal Sensors in CMOS-SOI Technology"],"prefix":"10.3390","volume":"17","author":[{"given":"Maria","family":"Malits","sequence":"first","affiliation":[{"name":"Department of Electrical Engineering, Technion\u2014Israel Institute of Technology, Haifa 3200003, Israel"}]},{"given":"Yael","family":"Nemirovsky","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, Technion\u2014Israel Institute of Technology, Haifa 3200003, Israel"}]}],"member":"1968","published-online":{"date-parts":[[2017,7,29]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Gianesello, F., Giry, A., Richard, O., Bon, O., Boret, S., Blanchet, F., Boissonnet, L., Touret, P., Cathelin, A., and Belot, D. 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