{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,21]],"date-time":"2026-01-21T12:12:29Z","timestamp":1768997549632,"version":"3.49.0"},"reference-count":35,"publisher":"MDPI AG","issue":"10","license":[{"start":{"date-parts":[[2017,10,13]],"date-time":"2017-10-13T00:00:00Z","timestamp":1507852800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"The National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["11605140"],"award-info":[{"award-number":["11605140"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"The National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["11435010"],"award-info":[{"award-number":["11435010"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Silicon carbide (SiC) detectors of an Ni\/4H-SiC Schottky diode structure and with sensitive areas of 1\u20134 cm2 were fabricated using high-quality lightly doped epitaxial 4H-SiC material, and were tested in the detection of alpha particles and pulsed X-rays\/UV-light. A linear energy response to alpha particles ranging from 5.157 to 5.805 MeV was obtained. The detectors were proved to have a low dark current, a good energy resolution, and a high neutron\/gamma discrimination for pulsed radiation, showing the advantages in charged particle detection and neutron detection in high-temperature and high-radiation environments.<\/jats:p>","DOI":"10.3390\/s17102334","type":"journal-article","created":{"date-parts":[[2017,10,13]],"date-time":"2017-10-13T11:34:09Z","timestamp":1507894449000},"page":"2334","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":20,"title":["The Fabrication and Characterization of Ni\/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm2"],"prefix":"10.3390","volume":"17","author":[{"given":"Lin-Yue","family":"Liu","sequence":"first","affiliation":[{"name":"School of Nuclear Science and Technology, Xi\u2019an Jiaotong University, No. 28, Xianning West Road, Xi\u2019an 710049, China"},{"name":"State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi\u2019an 710024, China"}]},{"given":"Ling","family":"Wang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices, Nanjing Electronic Devices Institute, No. 524 East Zhongshan Road, Nanjing 210016, China"}]},{"given":"Peng","family":"Jin","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi\u2019an 710024, China"}]},{"given":"Jin-Liang","family":"Liu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi\u2019an 710024, China"}]},{"given":"Xian-Peng","family":"Zhang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi\u2019an 710024, China"}]},{"given":"Liang","family":"Chen","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi\u2019an 710024, China"}]},{"given":"Jiang-Fu","family":"Zhang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi\u2019an 710024, China"}]},{"given":"Xiao-Ping","family":"Ouyang","sequence":"additional","affiliation":[{"name":"School of Nuclear Science and Technology, Xi\u2019an Jiaotong University, No. 28, Xianning West Road, Xi\u2019an 710049, China"},{"name":"State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi\u2019an 710024, China"},{"name":"Shaanxi Engineering Research Center for Pulse-Neutron Source and its Application, Xijing University, Xi\u2019an 710123, China"}]},{"given":"Ao","family":"Liu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices, Nanjing Electronic Devices Institute, No. 524 East Zhongshan Road, Nanjing 210016, China"}]},{"given":"Run-Hua","family":"Huang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices, Nanjing Electronic Devices Institute, No. 524 East Zhongshan Road, Nanjing 210016, China"}]},{"given":"Song","family":"Bai","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices, Nanjing Electronic Devices Institute, No. 524 East Zhongshan Road, Nanjing 210016, China"}]}],"member":"1968","published-online":{"date-parts":[[2017,10,13]]},"reference":[{"key":"ref_1","unstructured":"Babcock, R., Ruby, S., Schupp, F., and Sun, K. 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