{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,29]],"date-time":"2026-05-29T14:42:08Z","timestamp":1780065728663,"version":"3.54.0"},"reference-count":17,"publisher":"MDPI AG","issue":"12","license":[{"start":{"date-parts":[[2017,11,30]],"date-time":"2017-11-30T00:00:00Z","timestamp":1512000000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Four-transistor (T) pinned photodiode (PPD) CMOS image sensors (CISs) with four-megapixel resolution using 11\u00b5m pitch high dynamic range pixel were radiated with 3 MeV and 10MeV protons. The dark signal was measured pre- and post-radiation, with the dark signal post irradiation showing a remarkable increase. A theoretical method of dark signal distribution pre- and post-radiation is used to analyze the degradation mechanisms of the dark signal distribution. The theoretical results are in good agreement with experimental results. This research would provide a good understanding of the proton radiation effects on the CIS and make it possible to predict the dark signal distribution of the CIS under the complex proton radiation environments.<\/jats:p>","DOI":"10.3390\/s17122781","type":"journal-article","created":{"date-parts":[[2017,11,30]],"date-time":"2017-11-30T12:02:51Z","timestamp":1512043371000},"page":"2781","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":8,"title":["Proton Radiation Effects on Dark Signal Distribution of PPD CMOS Image Sensors: Both TID and DDD Effects"],"prefix":"10.3390","volume":"17","author":[{"given":"Yuanyuan","family":"Xue","sequence":"first","affiliation":[{"name":"State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi\u2019an 710024, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zujun","family":"Wang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi\u2019an 710024, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wei","family":"Chen","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi\u2019an 710024, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Minbo","family":"Liu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi\u2019an 710024, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Baoping","family":"He","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi\u2019an 710024, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhibin","family":"Yao","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi\u2019an 710024, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jiangkun","family":"Sheng","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi\u2019an 710024, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wuying","family":"Ma","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi\u2019an 710024, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Guantao","family":"Dong","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi\u2019an 710024, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Junshan","family":"Jin","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi\u2019an 710024, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2017,11,30]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Kim, D., Song, M., Choe, B., and Kim, S.Y. 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