{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,1]],"date-time":"2026-03-01T02:54:21Z","timestamp":1772333661552,"version":"3.50.1"},"reference-count":10,"publisher":"MDPI AG","issue":"12","license":[{"start":{"date-parts":[[2017,12,9]],"date-time":"2017-12-09T00:00:00Z","timestamp":1512777600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>CMOS image sensors (CISs) with global shutter (GS) function are strongly required in order to avoid image degradation. However, CISs with GS function have generally been inferior to the rolling shutter (RS) CIS in performance, because they have more components. This problem is remarkable in small pixel pitch. The newly developed 3.4 \u00b5m pitch GS CIS solves this problem by using multiple accumulation shutter technology and the gentle slope light guide structure. As a result, the developed GS pixel achieves 1.8 e\u2212 temporal noise and 16,200 e\u2212 full well capacity with charge domain memory in 120 fps operation. The sensitivity and parasitic light sensitivity are 28,000 e\u2212\/lx\u00b7s and \u221289 dB, respectively. Moreover, the incident light angle dependence of sensitivity and parasitic light sensitivity are improved by the gentle slope light guide structure.<\/jats:p>","DOI":"10.3390\/s17122860","type":"journal-article","created":{"date-parts":[[2017,12,11]],"date-time":"2017-12-11T12:26:37Z","timestamp":1512995197000},"page":"2860","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["Development of Gentle Slope Light Guide Structure in a 3.4 \u03bcm Pixel Pitch Global Shutter CMOS Image Sensor with Multiple Accumulation Shutter Technology"],"prefix":"10.3390","volume":"17","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-4457-8213","authenticated-orcid":false,"given":"Hiroshi","family":"Sekine","sequence":"first","affiliation":[{"name":"Canon Inc., 70-1, Yanagi-cho, Saiwai-ku, Kawasaki-shi, Kanagawa 212-8602, Japan"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6813-1889","authenticated-orcid":false,"given":"Masahiro","family":"Kobayashi","sequence":"additional","affiliation":[{"name":"Canon Inc., 70-1, Yanagi-cho, Saiwai-ku, Kawasaki-shi, Kanagawa 212-8602, Japan"}]},{"given":"Yusuke","family":"Onuki","sequence":"additional","affiliation":[{"name":"Canon Inc., 70-1, Yanagi-cho, Saiwai-ku, Kawasaki-shi, Kanagawa 212-8602, Japan"}]},{"given":"Kazunari","family":"Kawabata","sequence":"additional","affiliation":[{"name":"Canon Inc., 70-1, Yanagi-cho, Saiwai-ku, Kawasaki-shi, Kanagawa 212-8602, Japan"}]},{"given":"Toshiki","family":"Tsuboi","sequence":"additional","affiliation":[{"name":"Canon Inc., 70-1, Yanagi-cho, Saiwai-ku, Kawasaki-shi, Kanagawa 212-8602, Japan"}]},{"given":"Yasushi","family":"Matsuno","sequence":"additional","affiliation":[{"name":"Canon Inc., 70-1, Yanagi-cho, Saiwai-ku, Kawasaki-shi, Kanagawa 212-8602, Japan"}]},{"given":"Hidekazu","family":"Takahashi","sequence":"additional","affiliation":[{"name":"Canon Inc., 70-1, Yanagi-cho, Saiwai-ku, Kawasaki-shi, Kanagawa 212-8602, Japan"}]},{"given":"Shunsuke","family":"Inoue","sequence":"additional","affiliation":[{"name":"Canon Inc., 70-1, Yanagi-cho, Saiwai-ku, Kawasaki-shi, Kanagawa 212-8602, Japan"}]},{"given":"Takeshi","family":"Ichikawa","sequence":"additional","affiliation":[{"name":"Canon Inc., 70-1, Yanagi-cho, Saiwai-ku, Kawasaki-shi, Kanagawa 212-8602, Japan"}]}],"member":"1968","published-online":{"date-parts":[[2017,12,9]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Yasutomi, K., Seo, M.W., Kamoto, M., Teranishi, N., and Kawahito, S. (2017, January 5\u20138). A 0.61 E-Noise Global Shutter CMOS Image Sensor with Two-Stage Charge Transfer Pixels. Proceedings of the 2017 Symposium on VLSI Circuits, Kyoto, Japan.","DOI":"10.23919\/VLSIC.2017.8008497"},{"key":"ref_2","doi-asserted-by":"crossref","unstructured":"Sakano, Y., Sakai, S., Tashiro, Y., Kato, Y., Akiyama, K., Honda, K., Sato, M., Sakakibara, M., Taura, T., and Azami, K. (2017, January 5\u20138). 224-ke Saturation Signal Global Shutter CMOS Image Sensor with In-Pixel Pinned Storage and Lateral Overflow Integration Capacitor. Proceedings of the 2017 Symposium on VLSI Circuits, Kyoto, Japan.","DOI":"10.23919\/VLSIC.2017.8008498"},{"key":"ref_3","unstructured":"Velichko, S., Agranov, G., Hynecek, J., Johnson, S., Komori, H., Bai, J., Karasev, I., Mauritzson, R., Yi, X., and Lenchenkov, V. (2013, January 12\u201316). Low Noise High Efficiency 3.75 \u03bcm and 2.8 \u03bcm Global Shutter CMOS Pixel Arrays. 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Proceedings of the IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA.","DOI":"10.1109\/IEDM.2016.7838377"},{"key":"ref_6","doi-asserted-by":"crossref","unstructured":"Kobayashi, M., Onuki, Y., Kawabata, K., Sekine, H., Tsuboi, T., Matsuno, Y., Takahashi, H., Koizumi, T., Sakurai, K., and Yuzurihara, H. (2017, January 5\u20139). A 1.8erms\u2212 Temporal Noise Over 110dB Dynamic Range 3.4\u03bcm Pixel Pitch Global Shutter CMOS Image Sensor with Dual-Gain Amplifiers SS-ADC and Multiple Accumulation Shutter. Proceedings of the IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, CA, USA.","DOI":"10.1109\/ISSCC.2017.7870267"},{"key":"ref_7","unstructured":"Sekine, H., Kobayashi, M., Onuki, Y., Kawabata, K., Tsuboi, T., Matsuno, Y., Takahashi, H., Inoue, S., and Ichikawa, T. (June, January 30). A High Optical Performance 3.4 \u03bcm Pixel Pitch Global Shutter CMOS Image Sensor with Light Guide Structure. Proceedings of the 2017 International Image Sensor Workshop (IISW), Hiroshima, Japan."},{"key":"ref_8","unstructured":"Totsuka, H., Tsuboi, T., Muto, T., Yoshida, D., Matsuno, Y., Ohmura, M., Takahashi, H., Sakurai, K., Ichikawa, T., and Yuzurihara, H. (February, January 31). An APS-H size 250 Mpixel CMOS Image Sensor using Column Single Slope ADCs with Dual Gain Amplifiers. Proceedings of the IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, CA, USA."},{"key":"ref_9","doi-asserted-by":"crossref","unstructured":"Oike, Y., Akiyama, K., Hung, L.D., Niitsuma, W., Kato, A., Sato, M., Kato, Y., Nakamura, W., Shiroshita, H., and Sakano, Y. (2016, January 15\u201317). An 8.3 M-pixel 480 fps Global-Shutter CMOS Image Sensor with Gain-Adaptive Column ADCs and 2-on-1 Stacked Device Structure. Proceedings of the IEEE Symposium on VLSI Circuits (VLSI-Circuits), Honolulu, HI, USA.","DOI":"10.1109\/VLSIC.2016.7573543"},{"key":"ref_10","unstructured":"Centen, P., Lehr, S., Roth, S., Rotte, J., Heizmann, F., Momin, A., Dohmen, R., Schaaf, K., Damstra, J., and Ree, R. (2013, January 12\u201316). A 4e-noise 2\/3-inch Global Shutter 1920x1080P120 CMOS-Imager. Proceedings of the 2013 International Image Sensor Workshop (IISW), Sandy, UT, USA."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/17\/12\/2860\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T18:53:17Z","timestamp":1760208797000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/17\/12\/2860"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,12,9]]},"references-count":10,"journal-issue":{"issue":"12","published-online":{"date-parts":[[2017,12]]}},"alternative-id":["s17122860"],"URL":"https:\/\/doi.org\/10.3390\/s17122860","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2017,12,9]]}}}