{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,25]],"date-time":"2026-08-25T15:28:47Z","timestamp":1787671727745,"version":"build-2736575974"},"reference-count":11,"publisher":"MDPI AG","issue":"1","license":[{"start":{"date-parts":[[2018,1,3]],"date-time":"2018-01-03T00:00:00Z","timestamp":1514937600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>A new pinned photodiode (PPD) CMOS image sensor with reverse biased p-type substrate has been developed and characterized. The sensor uses traditional PPDs with one additional deep implantation step to suppress the parasitic reverse currents, and can be fully depleted. The first prototypes have been manufactured on an 18 \u00b5m thick, 1000 \u03a9\u00b7cm epitaxial silicon wafers using 180 nm PPD image sensor process. Both front-side illuminated (FSI) and back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v. The characterization results from a number of arrays of 10 \u00b5m and 5.4 \u00b5m PPD pixels, with different shape, the size and the depth of the new implant are in good agreement with device simulations. The new pixels could be reverse-biased without parasitic leakage currents well beyond full depletion, and demonstrate nearly identical optical response to the reference non-modified pixels. The observed excessive charge sharing in some pixel variants is shown to not be a limiting factor in operation. This development promises to realize monolithic PPD CIS with large depleted thickness and correspondingly high quantum efficiency at near-infrared and soft X-ray wavelengths.<\/jats:p>","DOI":"10.3390\/s18010118","type":"journal-article","created":{"date-parts":[[2018,1,3]],"date-time":"2018-01-03T12:00:06Z","timestamp":1514980806000},"page":"118","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":17,"title":["Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias"],"prefix":"10.3390","volume":"18","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-8412-3726","authenticated-orcid":false,"given":"Konstantin","family":"Stefanov","sequence":"first","affiliation":[{"name":"Centre for Electronic Imaging, The Open University, Walton Hall, Milton Keynes MK7 6AA, UK"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Andrew","family":"Clarke","sequence":"additional","affiliation":[{"name":"Centre for Electronic Imaging, The Open University, Walton Hall, Milton Keynes MK7 6AA, UK"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"James","family":"Ivory","sequence":"additional","affiliation":[{"name":"Centre for Electronic Imaging, The Open University, Walton Hall, Milton Keynes MK7 6AA, UK"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Andrew","family":"Holland","sequence":"additional","affiliation":[{"name":"Centre for Electronic Imaging, The Open University, Walton Hall, Milton Keynes MK7 6AA, UK"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2018,1,3]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"33","DOI":"10.1109\/JEDS.2014.2306412","article-title":"A Review of the Pinned Photodiode for CCD and CMOS Image Sensors","volume":"2","author":"Fossum","year":"2014","journal-title":"IEEE J. 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Electron Device"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"189","DOI":"10.1002\/pip.4670030303","article-title":"Optical Properties of Intrinsic Silicon at 300 K","volume":"3","author":"Green","year":"1995","journal-title":"Prog. Photovolt."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"225","DOI":"10.1109\/TED.2002.806476","article-title":"Fully Depleted, Back-Illuminated Charge-Coupled Devices Fabricated on High-Resistivity Silicon","volume":"50","author":"Holland","year":"2003","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_7","doi-asserted-by":"crossref","unstructured":"Resetar, T., De Munck, K., Haspeslagh, L., Rosmeulen, M., S\u00fcss, A., Puers, R., and Van Hoof, C. (2016). Development of Gated Pinned Avalanche Photodiode Pixels for High-Speed Low-Light Imaging. Sensors, 16.","DOI":"10.3390\/s16081294"},{"key":"ref_8","doi-asserted-by":"crossref","unstructured":"Stefanov, K.D., Clarke, A.S., Ivory, J., and Holland, A.D. (June, January 30). Fully Depleted, Monolithic Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias. Proceedings of the 2017 International Image Sensor Workshop, Hiroshima, Japan.","DOI":"10.1109\/LED.2016.2625745"},{"key":"ref_9","doi-asserted-by":"crossref","unstructured":"Sze, S.M. (2006). Physics of Semiconductor Devices, Wiley.","DOI":"10.1002\/0470068329"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"64","DOI":"10.1109\/LED.2016.2625745","article-title":"Fully Depleted Pinned Photodiode CMOS Image Sensor With Reverse Substrate Bias","volume":"38","author":"Stefanov","year":"2017","journal-title":"IEEE Electron Device Lett."},{"key":"ref_11","doi-asserted-by":"crossref","unstructured":"Janesick, J.R. (2007). Photon Transfer DN\u2192\u03bb, SPIE Press.","DOI":"10.1117\/3.725073"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/18\/1\/118\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T14:50:00Z","timestamp":1760194200000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/18\/1\/118"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,1,3]]},"references-count":11,"journal-issue":{"issue":"1","published-online":{"date-parts":[[2018,1]]}},"alternative-id":["s18010118"],"URL":"https:\/\/doi.org\/10.3390\/s18010118","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2018,1,3]]}}}