{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T03:56:22Z","timestamp":1760241382692,"version":"build-2065373602"},"reference-count":13,"publisher":"MDPI AG","issue":"1","license":[{"start":{"date-parts":[[2018,1,20]],"date-time":"2018-01-20T00:00:00Z","timestamp":1516406400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Mainly driven by automotive applications, there is an increasing interest in image sensors combining a high dynamic range (HDR) and immunity to the flicker issue. The native HDR pixel concept based on a parallel electron and hole collection for, respectively, a low signal level and a high signal level is particularly well-suited for this performance challenge. The theoretical performance of this pixel is modeled and compared to alternative HDR pixel architectures. This concept is proven with the fabrication of a 3.2 \u03bcm pixel in a back-side illuminated (BSI) process including capacitive deep trench isolation (CDTI). The electron-based image uses a standard 4T architecture with a pinned diode and provides state-of-the-art low-light performance, which is not altered by the pixel modifications introduced for the hole collection. The hole-based image reaches 750 kh+ linear storage capability thanks to a 73 fF CDTI capacitor. Both images are taken from the same integration window, so the HDR reconstruction is not only immune to the flicker issue but also to motion artifacts.<\/jats:p>","DOI":"10.3390\/s18010305","type":"journal-article","created":{"date-parts":[[2018,1,22]],"date-time":"2018-01-22T04:51:13Z","timestamp":1516596673000},"page":"305","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":10,"title":["A 750 K Photocharge Linear Full Well in a 3.2 \u03bcm HDR Pixel with Complementary Carrier Collection"],"prefix":"10.3390","volume":"18","author":[{"given":"Fr\u00e9d\u00e9ric","family":"Lalanne","sequence":"first","affiliation":[{"name":"STMicroelectronics. 850 rue Jean Monnet, 38926 Crolles Cedex. France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Pierre","family":"Malinge","sequence":"additional","affiliation":[{"name":"STMicroelectronics. 850 rue Jean Monnet, 38926 Crolles Cedex. France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Didier","family":"H\u00e9rault","sequence":"additional","affiliation":[{"name":"STMicroelectronics. 850 rue Jean Monnet, 38926 Crolles Cedex. France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Cl\u00e9mence","family":"Jamin-Mornet","sequence":"additional","affiliation":[{"name":"STMicroelectronics. 850 rue Jean Monnet, 38926 Crolles Cedex. France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Nicolas","family":"Virollet","sequence":"additional","affiliation":[{"name":"STMicroelectronics. 850 rue Jean Monnet, 38926 Crolles Cedex. France"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2018,1,20]]},"reference":[{"key":"ref_1","first-page":"350","article-title":"A 19.5 b Dynamic Range CMOS Image Sensor with 12b Column-Parallel Cyclic A\/D Converters","volume":"1","author":"Mase","year":"2005","journal-title":"ISSCC Dig. Tech. Papers"},{"key":"ref_2","unstructured":"Velichko, S., Johnson, S., Pates, D., Silsby, C., Hoekstra, C., Mentzer, R., and Beck, J. (June, January 30). 140 dB Dynamic Range Sub-electron Noise Floor Image Sensor. Proceedings of the International Image Sensor Worshop, Hiroshima, Japan."},{"key":"ref_3","first-page":"354","article-title":"A Linear-Logarithmic CMOS Sensor with Offset Calibration Using an Injected Charge Signal","volume":"1","author":"Hara","year":"2005","journal-title":"ISSCC Dig. Tech. Papers"},{"key":"ref_4","unstructured":"Ni, Y. (June, January 30). QLOG\u2014Logarithmic CMOS pixel with single electron detection capability. Proceedings of the International Image Sensor Worshop, Hiroshima, Japan."},{"key":"ref_5","unstructured":"Solhusvik, J., Kuang, J., Lin, Z., Manabe, S., Lyu, J.H., and Rhodes, H. (2013, January 12\u201316). A comparison of high dynamic range CIS technologies for automotive applications. 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Proceedings of the IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA.","DOI":"10.1109\/IEDM.2014.7046979"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/18\/1\/305\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T14:52:00Z","timestamp":1760194320000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/18\/1\/305"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,1,20]]},"references-count":13,"journal-issue":{"issue":"1","published-online":{"date-parts":[[2018,1]]}},"alternative-id":["s18010305"],"URL":"https:\/\/doi.org\/10.3390\/s18010305","relation":{},"ISSN":["1424-8220"],"issn-type":[{"type":"electronic","value":"1424-8220"}],"subject":[],"published":{"date-parts":[[2018,1,20]]}}}