{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,17]],"date-time":"2026-03-17T14:16:47Z","timestamp":1773757007359,"version":"3.50.1"},"reference-count":12,"publisher":"MDPI AG","issue":"1","license":[{"start":{"date-parts":[[2018,1,22]],"date-time":"2018-01-22T00:00:00Z","timestamp":1516579200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>We have developed a real time ultraviolet (UV) imaging system that can visualize both invisible UV light and a visible (VIS) background scene in an outdoor environment. As a UV\/VIS image sensor, an organic photoconductive film (OPF) imager is employed. The OPF has an intrinsically higher sensitivity in the UV wavelength region than those of conventional consumer Complementary Metal Oxide Semiconductor (CMOS) image sensors (CIS) or Charge Coupled Devices (CCD). As particular examples, imaging of hydrogen flame and of corona discharge is demonstrated. UV images overlapped on background scenes are simply made by on-board background subtraction. The system is capable of imaging weaker UV signals by four orders of magnitude than that of VIS background. It is applicable not only to future hydrogen supply stations but also to other UV\/VIS monitor systems requiring UV sensitivity under strong visible radiation environment such as power supply substations.<\/jats:p>","DOI":"10.3390\/s18010314","type":"journal-article","created":{"date-parts":[[2018,1,22]],"date-time":"2018-01-22T04:51:13Z","timestamp":1516596673000},"page":"314","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":16,"title":["A Real-Time Ultraviolet Radiation Imaging System Using an Organic Photoconductive Image Sensor"],"prefix":"10.3390","volume":"18","author":[{"given":"Toru","family":"Okino","sequence":"first","affiliation":[{"name":"Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Seiji","family":"Yamahira","sequence":"additional","affiliation":[{"name":"Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shota","family":"Yamada","sequence":"additional","affiliation":[{"name":"Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yutaka","family":"Hirose","sequence":"additional","affiliation":[{"name":"Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Akihiro","family":"Odagawa","sequence":"additional","affiliation":[{"name":"Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yoshihisa","family":"Kato","sequence":"additional","affiliation":[{"name":"Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Tsuyoshi","family":"Tanaka","sequence":"additional","affiliation":[{"name":"Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2018,1,22]]},"reference":[{"key":"ref_1","unstructured":"Romm, J.J. (2004). The Hype about Hydrogen, Island Press."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"87","DOI":"10.1016\/j.elstat.2006.07.004","article-title":"Minimum ignition energy of hydrogen-air mixture: Effects of humidity and spark duration","volume":"65","author":"Ono","year":"2007","journal-title":"J. Electrost."},{"key":"ref_3","unstructured":"Kuroda, R., Kawada, S., Nasuno, S., Nakazawa, T., Koda, Y., Hanzawa, K., and Sugawa, S. (2013, January 12\u201316). A FSI CMOS Image Sensor with 200\u20131000 nm Spectral Response and High Robustness to Ultraviolet Light Exposure. Proceedings of the International Image Sensor Workshop, Snowbird, UT, USA."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"1701","DOI":"10.1109\/TED.2013.2255103","article-title":"Characterization of backside-illuminated CMOS APS prototypes for the Extreme Ultraviolet Imager on-board Solar Orbiter","volume":"60","author":"BenMoussa","year":"2013","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_5","doi-asserted-by":"crossref","unstructured":"Shi, L., Sarubbi, F., Nihtianov, S.N., Nanver, L.K., Scholtes, T.L.M., and Scholze, F. (2009, January 3\u20135). High performance silicon-based extreme ultraviolet (EUV) radiation detector for industrial application. Proceedings of the 35th Annual Conference of IEEE Industrial Electronics, Porto, Portugal.","DOI":"10.1109\/IECON.2009.5414855"},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"403","DOI":"10.1063\/1.125768","article-title":"Solar-blind AlGaN photodiodes with very low cutoff wavelength","volume":"76","author":"Walker","year":"2000","journal-title":"Appl. Phys. Lett."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"191108","DOI":"10.1063\/1.4829065","article-title":"AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89%","volume":"103","author":"Cicek","year":"2013","journal-title":"Appl. Phys. Lett."},{"key":"ref_8","unstructured":"Okino, T., Yamahira, S., Yamada, S., Hirose, Y., Odagawa, A., Kato, Y., and Tanaka, T. (June, January 30). Ultraviolet and Visible Spectral Imaging of Hydrogen Flames Using an Organic Photoconductive Film CMOS Imager. Proceedings of the International Image Sensor Workshop, Hiroshima, Japan."},{"key":"ref_9","unstructured":"Ihama, M., Inomata, H., Asano, H., Imai, S., Mitsui, T., Imada, Y., Hayashi, M., Gotou, T., Suzuki, H., and Sawaki, D. (2011, January 8\u201311). CMOS Image Sensor with an Overlaid Organic Photoelectric Conversion Layer: Optical Advantages of Capturing Slanting Rays of Light. Proceedings of the International Image Sensor Workshop, Hokkaido, Japan."},{"key":"ref_10","unstructured":"Mori, M., Hirose, Y., Segawa, M., Miyanaga, I., Miyagawa, R., Ueda, T., Nara, H., Masuda, H., Kishimura, S., and Sasaki, T. (2013, January 10\u201313). 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Opt."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/18\/1\/314\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T14:52:04Z","timestamp":1760194324000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/18\/1\/314"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,1,22]]},"references-count":12,"journal-issue":{"issue":"1","published-online":{"date-parts":[[2018,1]]}},"alternative-id":["s18010314"],"URL":"https:\/\/doi.org\/10.3390\/s18010314","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2018,1,22]]}}}