{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,6]],"date-time":"2026-02-06T15:42:41Z","timestamp":1770392561253,"version":"3.49.0"},"reference-count":43,"publisher":"MDPI AG","issue":"2","license":[{"start":{"date-parts":[[2018,2,2]],"date-time":"2018-02-02T00:00:00Z","timestamp":1517529600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>This paper presents a novel structural piezoresistive pressure sensor with four-grooved membrane combined with rood beam to measure low pressure. In this investigation, the design, optimization, fabrication, and measurements of the sensor are involved. By analyzing the stress distribution and deflection of sensitive elements using finite element method, a novel structure featuring high concentrated stress profile (HCSP) and locally stiffened membrane (LSM) is built. Curve fittings of the mechanical stress and deflection based on FEM simulation results are performed to establish the relationship between mechanical performance and structure dimension. A combination of FEM and curve fitting method is carried out to determine the structural dimensions. The optimized sensor chip is fabricated on a SOI wafer by traditional MEMS bulk-micromachining and anodic bonding technology. When the applied pressure is 1 psi, the sensor achieves a sensitivity of 30.9 mV\/V\/psi, a pressure nonlinearity of 0.21% FSS and an accuracy of 0.30%, and thereby the contradiction between sensitivity and linearity is alleviated. In terms of size, accuracy and high temperature characteristic, the proposed sensor is a proper choice for measuring pressure of less than 1 psi.<\/jats:p>","DOI":"10.3390\/s18020439","type":"journal-article","created":{"date-parts":[[2018,2,2]],"date-time":"2018-02-02T12:00:10Z","timestamp":1517572810000},"page":"439","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":72,"title":["Design Optimization and Fabrication of a Novel Structural SOI Piezoresistive Pressure Sensor with High Accuracy"],"prefix":"10.3390","volume":"18","author":[{"given":"Chuang","family":"Li","sequence":"first","affiliation":[{"name":"E.T.S. Ingenieros Industriales, Polytechnical University of Madrid, C\/Jos\u00e9 Guti\u00e9rrez Abascal, 2. 28006 Madrid, Spain"}]},{"given":"Francisco","family":"Cordovilla","sequence":"additional","affiliation":[{"name":"E.T.S. Ingenieros Industriales, Polytechnical University of Madrid, C\/Jos\u00e9 Guti\u00e9rrez Abascal, 2. 28006 Madrid, Spain"}]},{"given":"R.","family":"Jagdheesh","sequence":"additional","affiliation":[{"name":"E.T.S. Ingenieros Industriales, Polytechnical University of Madrid, C\/Jos\u00e9 Guti\u00e9rrez Abascal, 2. 28006 Madrid, Spain"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9263-8404","authenticated-orcid":false,"given":"Jos\u00e9","family":"Oca\u00f1a","sequence":"additional","affiliation":[{"name":"E.T.S. Ingenieros Industriales, Polytechnical University of Madrid, C\/Jos\u00e9 Guti\u00e9rrez Abascal, 2. 28006 Madrid, Spain"}]}],"member":"1968","published-online":{"date-parts":[[2018,2,2]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"513","DOI":"10.1109\/JPROC.2009.2013612","article-title":"Review: Semiconductor piezoresistance for microsystems","volume":"97","author":"Barlian","year":"2009","journal-title":"Proc. IEEE"},{"key":"ref_2","doi-asserted-by":"crossref","unstructured":"Khodasevych, I., Parmar, S., and Troynikov, O. (2017). Flexible sensors for pressure therapy: Effect of substrate curvature and stiffness on sensor performance. Sensors, 17.","DOI":"10.3390\/s17102399"},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"69","DOI":"10.1016\/j.sna.2008.12.007","article-title":"Impact of high-g and high vibration environments on piezoresistive pressure sensor performance","volume":"150","author":"Gradolph","year":"2009","journal-title":"Sens. Actuators A Phys."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"7499","DOI":"10.3390\/s150407499","article-title":"Embedding piezoresistive pressure sensors to obtain online pressure profiles inside fiber composite laminates","volume":"15","author":"Moghaddam","year":"2015","journal-title":"Sensors"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"12174","DOI":"10.3390\/s140712174","article-title":"A smart high accuracy silicon piezoresistive pressure sensor temperature compensation system","volume":"14","author":"Zhou","year":"2014","journal-title":"Sensors"},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"015001","DOI":"10.1063\/1.4856455","article-title":"Design optimization of high pressure and high temperature piezoresistive pressure sensor for high sensitivity","volume":"85","author":"Niu","year":"2014","journal-title":"Rev. Sci. Instrum."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"1382","DOI":"10.3390\/s90301382","article-title":"Fabrication and structural design of micro pressure sensors for Tire Pressure Measurement Systems (TPMS)","volume":"9","author":"Tian","year":"2009","journal-title":"Sensors"},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"277","DOI":"10.1016\/j.sna.2012.03.027","article-title":"High-temperature piezoresistive pressure sensor based on implantation of oxygen into silicon wafer","volume":"179","author":"Li","year":"2012","journal-title":"Sens. Actuators A Phys."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"519","DOI":"10.1088\/0957-0233\/17\/3\/S11","article-title":"High temperature and frequency pressure sensor based on silicon-on-insulator layers","volume":"17","author":"Zhao","year":"2006","journal-title":"Meas. Sci. Technol."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"609","DOI":"10.1016\/j.proeng.2010.09.183","article-title":"Fabrication and characterization of a SiC\/SiO2\/Si piezoresistive pressure sensor","volume":"5","author":"Fragaa","year":"2010","journal-title":"Procedia Eng."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"689","DOI":"10.1016\/j.vacuum.2011.07.022","article-title":"Design and fabrication of piezoresistive strain gauges based on nanocrystalline diamond layers","volume":"86","author":"Kulha","year":"2012","journal-title":"Vacuum"},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"1141","DOI":"10.3390\/s90201141","article-title":"Piezoresistive sensitivity, linearity and resistance time drift of polysilicon nanofilms with different deposition temperatures","volume":"9","author":"Shi","year":"2009","journal-title":"Sensors"},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"151","DOI":"10.1016\/j.sna.2014.12.033","article-title":"Fabrication of electron beam physical vapor deposited polysilicon piezoresistive MEMS pressure sensor","volume":"223","author":"Singh","year":"2015","journal-title":"Sens. Actuators A Phys."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"074008","DOI":"10.1088\/1674-4926\/38\/7\/074008","article-title":"Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor","volume":"38","author":"Zhao","year":"2017","journal-title":"J. Semicond."},{"key":"ref_15","doi-asserted-by":"crossref","unstructured":"Yao, Z., Liang, T., Jia, P., Hong, Y., Qi, L., Lei, C., Zhang, B., and Xiong, J. (2016). A high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit. Sensors, 16.","DOI":"10.3390\/s16060913"},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"720","DOI":"10.1016\/j.proeng.2014.11.639","article-title":"SOI-based, high reliable pressure sensor with floating concept for high temperature applications","volume":"87","author":"Giuliani","year":"2014","journal-title":"Procedia Eng."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"140","DOI":"10.1016\/j.sna.2013.02.023","article-title":"Ambient temperature and bias conditions induced frequency drifts in an uncompensated SOI piezoresistive resonator","volume":"202","author":"Tu","year":"2013","journal-title":"Sens. Actuators A Phys."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"167","DOI":"10.1016\/j.sna.2013.09.002","article-title":"High-sensitivity triaxial tactile sensor with elastic microstructures pressing on piezoresistive cantilevers","volume":"215","author":"Takahashi","year":"2014","journal-title":"Sens. Actuators A Phys."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"1195","DOI":"10.1088\/0957-0233\/7\/9\/002","article-title":"High-performance piezoresistive pressure sensors for biomedical applications using very thin structured membranes","volume":"7","author":"Marco","year":"1996","journal-title":"Meas. Sci. Technol."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"275","DOI":"10.1016\/0250-6874(81)80047-9","article-title":"A special silicon diaphragm pressure sensor with high output and high accuracy","volume":"2","author":"Shimazoe","year":"1981","journal-title":"Sens. Actuators A Phys."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"35","DOI":"10.1016\/j.sna.2010.03.024","article-title":"A hollow stiffening structure for low-pressure sensors","volume":"160","author":"Kinnell","year":"2010","journal-title":"Sens. Actuators A Phys."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"1396","DOI":"10.1109\/JMEMS.2014.2313635","article-title":"Annularly grooved diaphragm pressure sensor with embedded silicon nanowires for low pressure application","volume":"23","author":"Zhang","year":"2014","journal-title":"J. Microelectromech. Syst."},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"176","DOI":"10.1016\/j.sna.2014.05.031","article-title":"A high sensitivity and high linearity pressure sensor based on a peninsula-structured diaphragm for low-pressure ranges","volume":"216","author":"Huang","year":"2014","journal-title":"Sens. Actuators A Phys."},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"045003","DOI":"10.1063\/1.3702809","article-title":"The design and analysis of beam-membrane structure sensors for micro-pressure measurement","volume":"83","author":"Tian","year":"2012","journal-title":"Rev. Sci. Instrum."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"015004","DOI":"10.1063\/1.4775603","article-title":"Incorporation of beams into bossed diaphragm for a high sensitivity and overload micro pressure sensor","volume":"84","author":"Yu","year":"2013","journal-title":"Rev. Sci. Instrum."},{"key":"ref_26","doi-asserted-by":"crossref","unstructured":"Meng, X., and Zhao, Y. (2016). The design and optimization of a highly sensitive and overload-resistant piezoresistive pressure sensor. Sensors, 16.","DOI":"10.3390\/s16030348"},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"22692","DOI":"10.3390\/s150922692","article-title":"Design and Application of a High Sensitivity Piezoresistive Pressure Sensor for Low Pressure Conditions","volume":"15","author":"Yu","year":"2015","journal-title":"Sensors"},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"514","DOI":"10.1109\/84.809067","article-title":"Simulation program for the sensitivity and linearity of piezoresistive pressure sensors","volume":"8","author":"Lin","year":"1999","journal-title":"J. Microelectromech. Syst."},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"2719","DOI":"10.3390\/s130302719","article-title":"A harsh environment wireless pressure sensing solution utilizing high temperature electronics","volume":"13","author":"Yang","year":"2013","journal-title":"Sensors"},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"095002","DOI":"10.1063\/1.4895999","article-title":"Geometry optimization for micro-pressure sensor considering dynamic interference","volume":"85","author":"Yu","year":"2014","journal-title":"Rev. Sci. Instrum."},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"739","DOI":"10.1007\/s00542-014-2234-4","article-title":"Realization of a micro pressure sensor with high sensitivity and overload by introducing beams and Islands","volume":"21","author":"Yu","year":"2015","journal-title":"Microsyst. Technol."},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"1213","DOI":"10.1007\/s00542-014-2215-7","article-title":"Design principles and considerations for the \u201cideal\u201d silicon piezoresistive pressure sensor: A focused review","volume":"20","author":"Kumar","year":"2014","journal-title":"Microsyst. Technol."},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"065003","DOI":"10.1063\/1.4921862","article-title":"Design of a MEMS piezoresistive differential pressure sensor with small thermal hysteresis for air data modules","volume":"86","author":"Song","year":"2015","journal-title":"Rev. Sci. Instrum."},{"key":"ref_34","doi-asserted-by":"crossref","unstructured":"Zhang, J., Zhao, Y., Ge, Y., Li, M., Yang, L., and Mao, X. (2016). Design optimization and fabrication of high-sensitivity SOI pressure sensors with high signal-to-noise ratios based on silicon nanowire piezoresistors. Micromachines, 7.","DOI":"10.3390\/mi7100187"},{"key":"ref_35","doi-asserted-by":"crossref","first-page":"29","DOI":"10.1016\/j.sna.2009.03.007","article-title":"Sensitivity analysis of packaging effect of silicon-based piezoresistive pressure sensor","volume":"152","author":"Chou","year":"2009","journal-title":"Sens. Actuators A Phys."},{"key":"ref_36","unstructured":"Bao, M. (2005). Analysis and Design Principles of MEMS Devices, Elsevier Science."},{"key":"ref_37","doi-asserted-by":"crossref","first-page":"20305","DOI":"10.3390\/s150820305","article-title":"Advanced liquid-free, piezoresistive, soi-based pressure sensors for measurements in harsh environments","volume":"15","author":"Ngo","year":"2015","journal-title":"Sensors"},{"key":"ref_38","doi-asserted-by":"crossref","first-page":"305","DOI":"10.1108\/02602281011072189","article-title":"The novel structural design for pressure sensors","volume":"30","author":"Tian","year":"2010","journal-title":"Sens. Rev."},{"key":"ref_39","doi-asserted-by":"crossref","first-page":"1754","DOI":"10.1109\/16.277331","article-title":"A Square-Diaphragm Piezoresistive Pressure Sensor with a Rectangular Central Boss for Low-Pressure Ranges","volume":"40","author":"Sandmaier","year":"1993","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_40","doi-asserted-by":"crossref","first-page":"39","DOI":"10.1016\/j.sse.2017.09.012","article-title":"Design optimization and fabrication of a novel structural piezoresistive pressure sensor for micro-pressure measurement","volume":"139","author":"Li","year":"2018","journal-title":"Solid-State Electron."},{"key":"ref_41","doi-asserted-by":"crossref","first-page":"66","DOI":"10.1016\/j.sna.2016.04.027","article-title":"A high sensitive pressure sensor with the novel bossed diaphragm combined with peninsula-island structure","volume":"244","author":"Xu","year":"2016","journal-title":"Sens. Actuators A Phys."},{"key":"ref_42","doi-asserted-by":"crossref","first-page":"124012","DOI":"10.1088\/0957-0233\/27\/12\/124012","article-title":"A bossed diaphragm piezoresistive pressure sensor with a peninsula-island structure for the ultra-low-pressure range with high sensitivity","volume":"27","author":"Zhao","year":"2016","journal-title":"Meas. Sci. Technol."},{"key":"ref_43","doi-asserted-by":"crossref","first-page":"126103","DOI":"10.1063\/1.4937355","article-title":"Note: High temperature pressure sensor for petroleum well based on silicon over insulator","volume":"86","author":"Tian","year":"2015","journal-title":"Rev. Sci. Instrum."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/18\/2\/439\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T14:53:37Z","timestamp":1760194417000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/18\/2\/439"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,2,2]]},"references-count":43,"journal-issue":{"issue":"2","published-online":{"date-parts":[[2018,2]]}},"alternative-id":["s18020439"],"URL":"https:\/\/doi.org\/10.3390\/s18020439","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2018,2,2]]}}}