{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,12]],"date-time":"2026-05-12T22:02:11Z","timestamp":1778623331440,"version":"3.51.4"},"reference-count":22,"publisher":"MDPI AG","issue":"4","license":[{"start":{"date-parts":[[2018,3,23]],"date-time":"2018-03-23T00:00:00Z","timestamp":1521763200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>An In2O3\/ITO thin film thermocouple was prepared via screen printing. Glass additives were added to improve the sintering process and to increase the density of the In2O3\/ITO films. The surface and cross-sectional images indicate that both the grain size and densification of the ITO and In2O3 films increased with the increase in annealing time. The thermoelectric voltage of the In2O3\/ITO thermocouple was 53.5 mV at 1270 \u00b0C at the hot junction. The average Seebeck coefficient of the thermocouple was calculated as 44.5 \u03bcV\/\u00b0C. The drift rate of the In2O3\/ITO thermocouple was 5.44 \u00b0C\/h at a measuring time of 10 h at 1270 \u00b0C.<\/jats:p>","DOI":"10.3390\/s18040958","type":"journal-article","created":{"date-parts":[[2018,4,4]],"date-time":"2018-04-04T03:43:51Z","timestamp":1522813431000},"page":"958","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":56,"title":["A Highly Thermostable In2O3\/ITO Thin Film Thermocouple Prepared via Screen Printing for High Temperature Measurements"],"prefix":"10.3390","volume":"18","author":[{"given":"Yantao","family":"Liu","sequence":"first","affiliation":[{"name":"Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &amp; International Center for Dielectric Research, Xi\u2019an Jiaotong University, Xi\u2019an 710049, China"},{"name":"Department of Electronic Engineering, Xi\u2019an University of Technology, Xi\u2019an 710048, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wei","family":"Ren","sequence":"additional","affiliation":[{"name":"Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &amp; International Center for Dielectric Research, Xi\u2019an Jiaotong University, Xi\u2019an 710049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Peng","family":"Shi","sequence":"additional","affiliation":[{"name":"Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &amp; International Center for Dielectric Research, Xi\u2019an Jiaotong University, Xi\u2019an 710049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Dan","family":"Liu","sequence":"additional","affiliation":[{"name":"Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &amp; International Center for Dielectric Research, Xi\u2019an Jiaotong University, Xi\u2019an 710049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yijun","family":"Zhang","sequence":"additional","affiliation":[{"name":"Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &amp; International Center for Dielectric Research, Xi\u2019an Jiaotong University, Xi\u2019an 710049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ming","family":"Liu","sequence":"additional","affiliation":[{"name":"Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &amp; International Center for Dielectric Research, Xi\u2019an Jiaotong University, Xi\u2019an 710049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2378-7304","authenticated-orcid":false,"given":"Zuo-Guang","family":"Ye","sequence":"additional","affiliation":[{"name":"Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &amp; International Center for Dielectric Research, Xi\u2019an Jiaotong University, Xi\u2019an 710049, China"},{"name":"Department of Chemistry and 4D LABS, Simon Fraser University, Burnaby, BC V5A 1S6, Canada"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Weixuan","family":"Jing","sequence":"additional","affiliation":[{"name":"International Joint Laboratory for Micro\/Nano Manufacturing and Measurement Technologies, Xi\u2019an Jiaotong University, Xi\u2019an 710049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bian","family":"Tian","sequence":"additional","affiliation":[{"name":"International Joint Laboratory for Micro\/Nano Manufacturing and Measurement Technologies, Xi\u2019an Jiaotong University, Xi\u2019an 710049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhuangde","family":"Jiang","sequence":"additional","affiliation":[{"name":"International Joint Laboratory for Micro\/Nano Manufacturing and Measurement Technologies, Xi\u2019an Jiaotong University, Xi\u2019an 710049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2018,3,23]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"045108","DOI":"10.1063\/1.3579515","article-title":"Preparation of W-Ta thin-film thermocouple on diamond anvil cell for in-situ temperature measurement under high pressure","volume":"82","author":"Yang","year":"2011","journal-title":"Rev. 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