{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T03:57:40Z","timestamp":1760241460264,"version":"build-2065373602"},"reference-count":21,"publisher":"MDPI AG","issue":"4","license":[{"start":{"date-parts":[[2018,3,28]],"date-time":"2018-03-28T00:00:00Z","timestamp":1522195200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>With an aim to reduce the cost of prototype development, this paper establishes a PSPICE hybrid model for the simulation of capacitive microelectromechanical systems (MEMS) gyroscopes. This is achieved by modeling gyroscopes in different modules, then connecting them in accordance with the corresponding principle diagram. Systematic simulations of this model are implemented along with a consideration of details of MEMS gyroscopes, including a capacitance model without approximation, mechanical thermal noise, and the effect of ambient temperature. The temperature compensation scheme and optimization of interface circuits are achieved based on the hybrid closed-loop simulation of MEMS gyroscopes. The simulation results show that the final output voltage is proportional to the angular rate input, which verifies the validity of this model.<\/jats:p>","DOI":"10.3390\/s18041006","type":"journal-article","created":{"date-parts":[[2018,3,29]],"date-time":"2018-03-29T05:26:37Z","timestamp":1522301197000},"page":"1006","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["PSPICE Hybrid Modeling and Simulation of Capacitive Micro-Gyroscopes"],"prefix":"10.3390","volume":"18","author":[{"given":"Yan","family":"Su","sequence":"first","affiliation":[{"name":"State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xin","family":"Tong","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Nan","family":"Liu","sequence":"additional","affiliation":[{"name":"College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China"},{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Guowei","family":"Han","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chaowei","family":"Si","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jin","family":"Ning","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhaofeng","family":"Li","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Fuhua","family":"Yang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2018,3,28]]},"reference":[{"key":"ref_1","unstructured":"Patel, C., and Mccluskey, P. 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