{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,8]],"date-time":"2026-01-08T10:04:34Z","timestamp":1767866674126,"version":"3.49.0"},"reference-count":31,"publisher":"MDPI AG","issue":"4","license":[{"start":{"date-parts":[[2018,4,11]],"date-time":"2018-04-11T00:00:00Z","timestamp":1523404800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>This paper presents an electrochemical seismic sensor in which paraylene was used as a substrate and insulating layer of micro-fabricated electrodes, enabling the detection of seismic signals with enhanced sensitivities in comparison to silicon-based counterparts. Based on microfabrication, paralene-based electrochemical seismic sensors were fabricated in which the thickness of the insulating spacer was 6.7 \u03bcm. Compared to silicon-based counterparts with ~100 \u03bcm insulating layers, the parylene-based devices produced higher sensitivities of 490.3 \u00b1 6.1 V\/(m\/s) vs. 192.2 \u00b1 1.9 V\/(m\/s) at 0.1 Hz, 4764.4 \u00b1 18 V\/(m\/s) vs. 318.9 \u00b1 6.5 V\/(m\/s) at 1 Hz, and 4128.1 \u00b1 38.3 V\/(m\/s) vs. 254.5 \u00b1 4.2 V\/(m\/s) at 10 Hz. In addition, the outputs of the parylene vs. silicon devices in response to two transit inputs were compared, producing peak responses of 2.97 V vs. 0.22 V and 2.41 V vs. 0.19 V, respectively. Furthermore, the self-noises of parylene vs. silicon-based devices were compared as follows: \u221282.3 \u00b1 3.9 dB vs. \u221290.4 \u00b1 9.4 dB at 0.1 Hz, \u221275.7 \u00b1 7.3 dB vs. \u221298.2 \u00b1 9.9 dB at 1 Hz, and \u221262.4 \u00b1 7.7 dB vs. \u221291.1 \u00b1 8.1 dB at 10 Hz. The developed parylene-based electrochemical seismic sensors may function as an enabling technique for further detection of seismic motions in various applications.<\/jats:p>","DOI":"10.3390\/s18041165","type":"journal-article","created":{"date-parts":[[2018,4,11]],"date-time":"2018-04-11T12:16:50Z","timestamp":1523449010000},"page":"1165","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":9,"title":["A Flexible Sensing Unit Manufacturing Method of Electrochemical Seismic Sensor"],"prefix":"10.3390","volume":"18","author":[{"given":"Guanglei","family":"Li","sequence":"first","affiliation":[{"name":"University of Chinese Academy of Sciences, Beijing 100049, China"},{"name":"Institute of Electronics, Chinese Academy of Sciences, Beijing 100010, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhenyuan","family":"Sun","sequence":"additional","affiliation":[{"name":"Tsinghua University, Beijing 100084, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Junbo","family":"Wang","sequence":"additional","affiliation":[{"name":"University of Chinese Academy of Sciences, Beijing 100049, China"},{"name":"Institute of Electronics, Chinese Academy of Sciences, Beijing 100010, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Deyong","family":"Chen","sequence":"additional","affiliation":[{"name":"University of Chinese Academy of Sciences, Beijing 100049, China"},{"name":"Institute of Electronics, Chinese Academy of Sciences, Beijing 100010, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4612-3279","authenticated-orcid":false,"given":"Jian","family":"Chen","sequence":"additional","affiliation":[{"name":"University of Chinese Academy of Sciences, Beijing 100049, China"},{"name":"Institute of Electronics, Chinese Academy of Sciences, Beijing 100010, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Lianhong","family":"Chen","sequence":"additional","affiliation":[{"name":"University of Chinese Academy of Sciences, Beijing 100049, China"},{"name":"Institute of Electronics, Chinese Academy of Sciences, Beijing 100010, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chao","family":"Xu","sequence":"additional","affiliation":[{"name":"University of Chinese Academy of Sciences, Beijing 100049, China"},{"name":"Institute of Electronics, Chinese Academy of Sciences, Beijing 100010, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wenjie","family":"Qi","sequence":"additional","affiliation":[{"name":"University of Chinese Academy of Sciences, Beijing 100049, China"},{"name":"Institute of Electronics, Chinese Academy of Sciences, Beijing 100010, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yu","family":"Zheng","sequence":"additional","affiliation":[{"name":"Affiliated High School of Peking University, Beijing 100080, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2018,4,11]]},"reference":[{"key":"ref_1","unstructured":"Havskov, J., and Alguacil, G. 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