{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,1]],"date-time":"2026-05-01T17:14:53Z","timestamp":1777655693471,"version":"3.51.4"},"reference-count":28,"publisher":"MDPI AG","issue":"5","license":[{"start":{"date-parts":[[2018,5,19]],"date-time":"2018-05-19T00:00:00Z","timestamp":1526688000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>This paper investigates the concepts, performance and limitations of temperature sensing circuits realized in complementary metal-oxide-semiconductor (CMOS) silicon on insulator (SOI) technology. It is shown that the MOSFET threshold voltage (Vt) can be used to accurately measure the chip local temperature by using a Vt extractor circuit. Furthermore, the circuit\u2019s performance is compared to standard circuits used to generate an accurate output current or voltage proportional to the absolute temperature, i.e., proportional-to-absolute temperature (PTAT), in terms of linearity, sensitivity, power consumption, speed, accuracy and calibration needs. It is shown that the Vt extractor circuit is a better solution to determine the temperature of low power, analog and mixed-signal designs due to its accuracy, low power consumption and no need for calibration. The circuit has been designed using 1 \u00b5m partially depleted (PD) CMOS-SOI technology, and demonstrates a measurement inaccuracy of \u00b11.5 K across 300 K\u2013500 K temperature range while consuming only 30 \u00b5W during operation.<\/jats:p>","DOI":"10.3390\/s18051629","type":"journal-article","created":{"date-parts":[[2018,5,21]],"date-time":"2018-05-21T04:07:30Z","timestamp":1526875650000},"page":"1629","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":15,"title":["Study of CMOS-SOI Integrated Temperature Sensing Circuits for On-Chip Temperature Monitoring"],"prefix":"10.3390","volume":"18","author":[{"given":"Maria","family":"Malits","sequence":"first","affiliation":[{"name":"Department of Electrical Engineering, Technion\u2014Israel Institute of Technology, Haifa 3200003, Israel"}]},{"given":"Igor","family":"Brouk","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, Technion\u2014Israel Institute of Technology, Haifa 3200003, Israel"}]},{"given":"Yael","family":"Nemirovsky","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, Technion\u2014Israel Institute of Technology, Haifa 3200003, Israel"}]}],"member":"1968","published-online":{"date-parts":[[2018,5,19]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Poirier, C., McGowen, R., Bostak, C., and Naffziger, S. (2005, January 10). Power and temperature control on a 90 nm Itanium-family processor. Proceedings of the IEEE ISSCC Digest of Technical Papers, San Francisco, CA, USA.","DOI":"10.1109\/JSSC.2005.859902"},{"key":"ref_2","doi-asserted-by":"crossref","unstructured":"Duarte, D., Geannopoulos, G., Muhgal, U., Wong, K., and Taylor, G. (2007, January 16\u201319). Temperature sensor design in a high volume manufacturing 65 nm CMOS digital process. Proceedings of the IEEE Custom Integrated Circuits Conference, San Jose, CA, USA.","DOI":"10.1109\/CICC.2007.4405718"},{"key":"ref_3","doi-asserted-by":"crossref","unstructured":"Li, Y., and Lakdawala, H. (2011, January 19\u201321). Smart integrated temperature sensor Mixed signal circuits and systems in 32-nm and beyond. Proceedings of the IEEE Custom Integrated Circuits Conference, San Jose, CA, USA.","DOI":"10.1109\/CICC.2011.6055295"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"454","DOI":"10.1109\/JSSC.2004.841013","article-title":"A CMOS smart temperature sensor with a 3\u03c3 inaccuracy of \u00b10.5 \u00b0C from \u221250 \u00b0C to 120 \u00b0C","volume":"40","author":"Pertijs","year":"2005","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"933","DOI":"10.1109\/4.508205","article-title":"Micropower CMOS temperature sensor with digital output","volume":"31","author":"Bakker","year":"1996","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"4657","DOI":"10.1109\/TED.2017.2751681","article-title":"Modeling the Performance of Nano Machined CMOS Transistors for Uncooled IR Sensing","volume":"64","author":"Zviagintsev","year":"2017","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_7","unstructured":"Souza, M., Pavanello, M.A., and Flandre, D. (2016, January 10\u201313). Low power highly linear temperature sensor based on SOI lateral PIN diodes. Proceedings of the IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Burlingame, CA, USA."},{"key":"ref_8","doi-asserted-by":"crossref","unstructured":"De Souza, M., Rue, B., Flandre, D., and Pavanello, M.A. (2009, January 5\u20138). Thermal sensing performance of lateral SOI PIN diodes in the 90\u2013400 K range. Proceedings of the IEEE International SOI Conference, Foster City, CA, USA.","DOI":"10.1109\/SOI.2009.5318770"},{"key":"ref_9","first-page":"160","article-title":"Thin-Film Lateral SOI PIN Diodes for Thermal Sensing Reaching the Cryogenic Regime","volume":"5","author":"Rue","year":"2010","journal-title":"J. Integr. Circuits Syst."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"997","DOI":"10.1109\/JSEN.2009.2037822","article-title":"Silicon on Insulator Diode Temperature Sensor\u2014A Detailed Analysis for Ultra-High Temperature Operation","volume":"10","author":"Santra","year":"2010","journal-title":"IEEE Sens. J."},{"key":"ref_11","doi-asserted-by":"crossref","unstructured":"Santra, S., Guha, P.K., Haque, M.S., Ali, S.Z., and Udrea, F. (September, January 15). Si diode temperature sensor beyond 300 \u00b0C. Proceedings of the 2007 International Semiconductor Conference, Sinaia, Romania.","DOI":"10.1109\/SMICND.2007.4519747"},{"key":"ref_12","first-page":"568","article-title":"An On-Chip Temperature Sensor with a Self-Discharging Diode in 32-nm SOI CMOS","volume":"59","author":"Chowdhury","year":"2012","journal-title":"IEEE Trans. Circuits Syst. II Express Briefs"},{"key":"ref_13","doi-asserted-by":"crossref","unstructured":"Pathrose, J., Zou, L., Chai, K.T.C., Je, M., and Xu, Y.P. (2013, January 11\u201313). A Time-Domain Smart Temperature Sensor without an Explicit Bandgap Reference in SOI CMOS Operating up to 225 \u00b0C. Proceedings of the IEEE Asian Solid-State Circuits Conference (A-SSCC), Singapore.","DOI":"10.1109\/ASSCC.2013.6691010"},{"key":"ref_14","doi-asserted-by":"crossref","unstructured":"Malits, M., and Nemirovsky, Y. (2017). Nanometric Integrated Temperature and Thermal Sensors in CMOS-SOI Technology. Sensors, 17.","DOI":"10.3390\/s17081739"},{"key":"ref_15","unstructured":"(2018, March 18). XFAB CMOS-SOI 1 \u00b5m Process XI10. Available online: https:\/\/www.xfab.com\/en\/technology\/soi\/10-um-xi10\/."},{"key":"ref_16","unstructured":"Gray, P.R., Hurst, P.J., Lewis, S.H., and Meyer, R.G. (2009). Analysis and Design of Analogue Integrated Circuits, John Wiley & Sons. [5th ed.]."},{"key":"ref_17","unstructured":"(2018, March 08). Berkeley Short-Channel IGFET Model (BSIM). Available online: http:\/\/www-device.eecs.berkeley.edu\/bsim\/."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"691","DOI":"10.1093\/biomet\/78.3.691","article-title":"A note on the general definition of the coefficient of determination","volume":"78","author":"Nagelkerke","year":"1991","journal-title":"Biometrika"},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"1763","DOI":"10.1109\/TCAD.2005.858276","article-title":"IC thermal simulation and modeling via efficient multigrid-based approaches","volume":"25","author":"Li","year":"2006","journal-title":"IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"668","DOI":"10.1109\/43.712099","article-title":"ILLIADS-T: An electro thermal timing simulator for temperature-sensitive reliability diagnosis of CMOS VLSI chips","volume":"17","author":"Cheng","year":"1998","journal-title":"IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst."},{"key":"ref_21","unstructured":"Yu, Z., Yergeau, D., Dutton, R., Nakagawa, S., and Deeney, J. (2001, January 18\u201320). Fast placement-dependent full chip thermal simulation. Proceedings of the 2001 International Symposium on VLSI Technology, Systems, and Applications, Hsinchu, Taiwan."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"587","DOI":"10.1109\/6144.868862","article-title":"Thermal Dynamics and the Time Constant Domain","volume":"23","author":"Rencz","year":"2000","journal-title":"IEEE Trans. Compon. Packag. Technol."},{"key":"ref_23","unstructured":"Allen, P.E., and Holberg, D.R. (2011). CMOS Analog Circuit Design, Holt, Rinehard and Winston. [3rd ed.]."},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"2047","DOI":"10.1109\/JSSC.2009.2021922","article-title":"A 300 nW, 15 ppm\/C, 20 ppm\/V CMOS Voltage Reference Circuit Consisting of Subthreshold MOSFETs","volume":"44","author":"Ueno","year":"2009","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_25","first-page":"496","article-title":"Temperature Sensor Front End in SOI CMOS Operating up to 250 \u00b0C","volume":"61","author":"Pathrose","year":"2014","journal-title":"IEEE Trans. Circuits Syst. II Express Briefs"},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"146","DOI":"10.1109\/JSSC.2002.806265","article-title":"A CMOS voltage reference based on weighted \u0394VGS for CMOS low-dropout linear regulators","volume":"38","author":"Nang","year":"2003","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_27","first-page":"341","article-title":"A CMOS voltage reference based on mutual compensation of Vtn and Vtp","volume":"59","author":"Zhou","year":"2012","journal-title":"IEEE Trans. Circuits Syst. II Express Briefs"},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"626","DOI":"10.1109\/82.943334","article-title":"Low-Voltage Low-Power Accurate CMOS Vt Extractor","volume":"48","author":"Fikos","year":"2001","journal-title":"IEEE Trans. Circuit Syst. II Analog Digit. Signal Process."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/18\/5\/1629\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T15:05:01Z","timestamp":1760195101000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/18\/5\/1629"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,5,19]]},"references-count":28,"journal-issue":{"issue":"5","published-online":{"date-parts":[[2018,5]]}},"alternative-id":["s18051629"],"URL":"https:\/\/doi.org\/10.3390\/s18051629","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2018,5,19]]}}}