{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,20]],"date-time":"2026-03-20T02:42:19Z","timestamp":1773974539158,"version":"3.50.1"},"reference-count":25,"publisher":"MDPI AG","issue":"6","license":[{"start":{"date-parts":[[2018,5,23]],"date-time":"2018-05-23T00:00:00Z","timestamp":1527033600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"National Key R&amp;D Plan of China","award":["2017YFB1104903"],"award-info":[{"award-number":["2017YFB1104903"]}]},{"DOI":"10.13039\/501100000930","name":"NSF","doi-asserted-by":"publisher","award":["IIS-1054585"],"award-info":[{"award-number":["IIS-1054585"]}],"id":[{"id":"10.13039\/501100000930","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Black phosphorus (BP), owing to its distinguished properties, has become one of the most competitive candidates for photodetectors. However, there has been little attention paid on photo-response performance of multilayer BP nanoflakes with large layer thickness. In fact, multilayer BP nanoflakes with large layer thickness have greater potential from the fabrication viewpoint as well as due to the physical properties than single or few layer ones. In this report, the thickness-dependence of the intrinsic property of BP photodetectors in the dark was initially investigated. Then the photo-response performance (including responsivity, photo-gain, photo-switching time, noise equivalent power, and specific detectivity) of BP photodetectors with relative thicker thickness was explored under a near-infrared laser beam (\u03bbIR = 830 nm). Our experimental results reveal the impact of BP\u2019s thickness on the current intensity of the channel and show degenerated p-type BP is beneficial for larger current intensity. More importantly, the photo-response of our thicker BP photodetectors exhibited a larger responsivity up to 2.42 A\/W than the few-layer ones and a fast response photo-switching speed (response time is ~2.5 ms) comparable to thinner BP nanoflakes was obtained, indicating BP nanoflakes with larger layer thickness are also promising for application for ultra-fast and ultra-high near-infrared photodetectors.<\/jats:p>","DOI":"10.3390\/s18061668","type":"journal-article","created":{"date-parts":[[2018,5,23]],"date-time":"2018-05-23T03:14:24Z","timestamp":1527045264000},"page":"1668","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":36,"title":["Multilayer Black Phosphorus Near-Infrared Photodetectors"],"prefix":"10.3390","volume":"18","author":[{"given":"Chaojian","family":"Hou","sequence":"first","affiliation":[{"name":"A Key Laboratory of Microsystems and Microstructures Manufacturing, Ministry of Education, School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Lijun","family":"Yang","sequence":"additional","affiliation":[{"name":"A Key Laboratory of Microsystems and Microstructures Manufacturing, Ministry of Education, School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bo","family":"Li","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Qihan","family":"Zhang","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yuefeng","family":"Li","sequence":"additional","affiliation":[{"name":"Department of Physics and Astronomy, Michigan State University, East Lansing, MI 48824, USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Qiuyang","family":"Yue","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yang","family":"Wang","sequence":"additional","affiliation":[{"name":"A Key Laboratory of Microsystems and Microstructures Manufacturing, Ministry of Education, School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3063-4819","authenticated-orcid":false,"given":"Zhan","family":"Yang","sequence":"additional","affiliation":[{"name":"School of Mechatronics Engineering, Soochow University, Soochow 215000, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Lixin","family":"Dong","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, USA"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2018,5,23]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"2148","DOI":"10.1143\/JPSJ.52.2148","article-title":"Electrical properties of black phosphorus single crystals","volume":"52","author":"Yuichi","year":"1983","journal-title":"J. Phys. Soc. Jpn."},{"key":"ref_2","doi-asserted-by":"crossref","unstructured":"Qiao, J., Kong, X., Hu, Z.X., Yang, F., and Ji, W. (2014). High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus. Nat. Commun., 4475.","DOI":"10.1038\/ncomms5475"},{"key":"ref_3","doi-asserted-by":"crossref","unstructured":"Kong, L., Qin, Z., Xie, G., Guo, Z., Zhang, H., Yuan, P., and Qian, L. (2016). Black phosphorus as broadband saturable absorber for pulsed lasers from 1 \u03bcm to 2.7 \u03bcm wavelength. Laser Phys. Lett., 13.","DOI":"10.1088\/1612-2011\/13\/4\/045801"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"3481","DOI":"10.1002\/adma.201506352","article-title":"Broadband Black-Phosphorus Photodetectors with High Responsivity","volume":"28","author":"Huang","year":"2016","journal-title":"Adv. Mater."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"3347","DOI":"10.1021\/nl5008085","article-title":"Fast and broadband photo-response of few-layer black phosphorus field-effect transistors","volume":"14","author":"Michele","year":"2014","journal-title":"Nano Lett."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"011002","DOI":"10.1088\/2053-1583\/2\/1\/011002","article-title":"Environmental instability of few-layer black phosphorus","volume":"2","author":"Island","year":"2015","journal-title":"2D Mater."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"11609","DOI":"10.1002\/ange.201605168","article-title":"Light-Induced Ambient Degradation of Few-Layer Black Phosphorus: Mechanism and Protection","volume":"128","author":"Zhou","year":"2016","journal-title":"Angew. Chem."},{"key":"ref_8","doi-asserted-by":"crossref","unstructured":"Low, T., Engel, M., Steiner, M., and Avouris, P. (2014). Origin of photoresponse in black phosphorus phototransistors. Phys. Rev. B, 90.","DOI":"10.1103\/PhysRevB.90.081408"},{"key":"ref_9","doi-asserted-by":"crossref","unstructured":"Gomez, A.C., Buscema, M., Molenaar, R., Singh, V., Janssen, L., van der Zant, H.S.J., and Steele, G.A. (2014). Deterministic Transfer of Two-dimensional Materials by All-Dry Viscoelastic Stamping. 2D Mater., 1.","DOI":"10.1088\/2053-1583\/1\/1\/011002"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"2973","DOI":"10.1021\/nl901396g","article-title":"Screening and Interlayer Coupling in Multilayer Graphene Field-Effect Transistors","volume":"9","author":"Sui","year":"2009","journal-title":"Nano Lett."},{"key":"ref_11","doi-asserted-by":"crossref","unstructured":"Rodin, A.S., Carvalho, A., and Neto, A.H.C. (2014). Strain-Induced Gap Modification in Black Phosphorus. Phys. Rev. Lett., 112.","DOI":"10.1103\/PhysRevLett.112.176801"},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"9143","DOI":"10.1021\/acsnano.7b03994","article-title":"Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p\u2212n Junction","volume":"11","author":"Liu","year":"2017","journal-title":"ACS Nano"},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"100","DOI":"10.1021\/nl303583v","article-title":"High performance multilayer MoS2 transistors with scandium contacts","volume":"13","author":"Das","year":"2013","journal-title":"Nano Lett."},{"key":"ref_14","first-page":"7221","article-title":"Hysteresis of Electronic Transport in Graphene Transistors","volume":"4","author":"Wang","year":"2010","journal-title":"Nano Lett."},{"key":"ref_15","unstructured":"Bube, R.H. (1992). Photoelectronic Properties of Semiconductors, Cambridge University Press."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"692","DOI":"10.1021\/acsphotonics.6b00079","article-title":"Near-Infrared Photodetector Based on MoS2\/Black Phosphorus Heterojunction","volume":"3","author":"Ye","year":"2016","journal-title":"ACS Photonics"},{"key":"ref_17","doi-asserted-by":"crossref","unstructured":"Youngblood, N., and Li, M. (2017). Ultrafast photocurrent measurements of a black phosphorus photodetector. Appl. Phys. Lett., 110.","DOI":"10.1063\/1.4975360"},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"497","DOI":"10.1038\/nnano.2013.100","article-title":"Ultrasensitive photodetectors based on monolayer MoS2","volume":"8","author":"Oriol","year":"2013","journal-title":"Nat. Nanotechnol."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"514","DOI":"10.1021\/nn405037s","article-title":"Extraordinary Photoresponse in Two-Dimensional In2Se3 Nanosheets","volume":"8","author":"Gedrim","year":"2013","journal-title":"ACS Nano"},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"1649","DOI":"10.1021\/nl400107k","article-title":"Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrate","volume":"13","author":"Hu","year":"2013","journal-title":"Nano Lett."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"1347","DOI":"10.1039\/C4TC02325K","article-title":"Flexible photodetector from ultraviolet to near infrared based on a SnS2 nanosheet microsphere film","volume":"3","author":"Tao","year":"2015","journal-title":"J. Mater. Chem. C"},{"key":"ref_22","unstructured":"Lai, K.W.C., Xi, N., Chen, H., Fung, C.K.M., and Chen, L. (2011). Development of graphene-based optical detectors for infrared sensing applications. IEEE Sens., 398\u2013401."},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"1712","DOI":"10.1002\/adma.201404945","article-title":"A stretchable nanowire UV\u2013vis\u2013NIR photodetector with high performance","volume":"27","author":"Yoo","year":"2015","journal-title":"Adv. Mater."},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"3905","DOI":"10.1021\/nn305301b","article-title":"Few-Layer MoS2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments","volume":"7","author":"Tsai","year":"2013","journal-title":"ACS Nano"},{"key":"ref_25","first-page":"95","article-title":"Design and Properties of Silicon Avalanche Photodiodes","volume":"12","author":"Wegrzecka","year":"2004","journal-title":"Opto-Electron. Rev."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/18\/6\/1668\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T15:05:29Z","timestamp":1760195129000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/18\/6\/1668"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,5,23]]},"references-count":25,"journal-issue":{"issue":"6","published-online":{"date-parts":[[2018,6]]}},"alternative-id":["s18061668"],"URL":"https:\/\/doi.org\/10.3390\/s18061668","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2018,5,23]]}}}