{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,10]],"date-time":"2026-05-10T04:59:33Z","timestamp":1778389173257,"version":"3.51.4"},"reference-count":20,"publisher":"MDPI AG","issue":"6","license":[{"start":{"date-parts":[[2018,6,1]],"date-time":"2018-06-01T00:00:00Z","timestamp":1527811200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Japan Society for the Promotion of Science (JSPS) KAKENHI Grant-in-Aid for Scientific Research on Innovative Areas","award":["25109002, 25109003, 25109004"],"award-info":[{"award-number":["25109002, 25109003, 25109004"]}]},{"name":"Japan Society for the Promotion of Science (JSPS) KAKENHI Grant-in-Aid for Young Scientists","award":["15K17648"],"award-info":[{"award-number":["15K17648"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>In this paper, we report on the development of a monolithic active pixel sensor for X-ray imaging using 0.2 \u00b5m fully depleted silicon-on-insulator (SOI)-based technology to support next generation astronomical satellite missions. Detail regarding low-noise dual-gain SOI based pixels with a charge sensitive amplifier and pinned depleted diode sensor structure is presented. The proposed multi-well sensor structure underneath the fully-depleted SOI allows the design of a detector with low node capacitance and high charge collection efficiency. Configurations for achieving very high charge-to-voltage conversion gain of 52 \u00b5V\/e\u2212 and 187 \u00b5V\/e\u2212 are demonstrated. Furthermore, in-pixel dual gain selection is used for low-noise and wide dynamic range X-ray energy detection. A technique to improve the noise performance by removing correlated system noise leads to an improvement in the spectroscopic performance of the measured X-ray energy. Taken together, the implemented chip has low dark current (44.8 pA\/cm2 at \u221230 \u00b0C), improved noise performance (8.5 e\u2212 rms for high gain and 11.7 e\u2212 rms for low gain), and better energy resolution of 2.89% (171 eV FWHM) at 5.9 keV using 55Fe and 1.67% (234 eV FWHM) at 13.95 keV using 241Am.<\/jats:p>","DOI":"10.3390\/s18061789","type":"journal-article","created":{"date-parts":[[2018,6,4]],"date-time":"2018-06-04T08:52:03Z","timestamp":1528102323000},"page":"1789","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["A Silicon-on-Insulator-Based Dual-Gain Charge-Sensitive Pixel Detector for Low-Noise X-ray Imaging for Future Astronomical Satellite Missions"],"prefix":"10.3390","volume":"18","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-3262-526X","authenticated-orcid":false,"given":"Sumeet","family":"Shrestha","sequence":"first","affiliation":[{"name":"Research Institute of Electronics, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shoji","family":"Kawahito","sequence":"additional","affiliation":[{"name":"Research Institute of Electronics, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hiroki","family":"Kamehama","sequence":"additional","affiliation":[{"name":"Information and Communication Systems Engineering, National Institute of Technology, Okinawa College, Okinawa 905-2171, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Syunta","family":"Nakanishi","sequence":"additional","affiliation":[{"name":"Research Institute of Electronics, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Keita","family":"Yasutomi","sequence":"additional","affiliation":[{"name":"Research Institute of Electronics, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Keiichiro","family":"Kagawa","sequence":"additional","affiliation":[{"name":"Research Institute of Electronics, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Nobukazu","family":"Teranishi","sequence":"additional","affiliation":[{"name":"Research Institute of Electronics, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ayaki","family":"Takeda","sequence":"additional","affiliation":[{"name":"Department of Applied Physics and Electronic Engineering, University of Miyazaki, Miyazaki 889-2192, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5504-4903","authenticated-orcid":false,"given":"Takeshi Go","family":"Tsuru","sequence":"additional","affiliation":[{"name":"Department of Physics, Kyoto University, Kyoto 606-8502, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ikuo","family":"Kurachi","sequence":"additional","affiliation":[{"name":"High Energy Accelerator Research Organization, Tsukuba, Ibaraki 305-0801, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1454-2287","authenticated-orcid":false,"given":"Yasuo","family":"Arai","sequence":"additional","affiliation":[{"name":"High Energy Accelerator Research Organization, Tsukuba, Ibaraki 305-0801, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2018,6,1]]},"reference":[{"key":"ref_1","unstructured":"Gaskin, A.J., and Harrison, A.F. 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