{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,4]],"date-time":"2026-02-04T20:05:21Z","timestamp":1770235521462,"version":"3.49.0"},"reference-count":58,"publisher":"MDPI AG","issue":"6","license":[{"start":{"date-parts":[[2018,6,4]],"date-time":"2018-06-04T00:00:00Z","timestamp":1528070400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"KAKENHI","award":["18K13806"],"award-info":[{"award-number":["18K13806"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Thanks to its excellent intrinsic properties, diamond is promising for applications of high-power electronic devices, ultraviolet detectors, biosensors, high-temperature tolerant gas sensors, etc. Here, an overview of high-k oxides on hydrogenated-diamond (H-diamond) for metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) is demonstrated. Fabrication routines for the H-diamond MOS capacitors and MOSFETs, band configurations of oxide\/H-diamond heterointerfaces, and electrical properties of the MOS and MOSFETs are summarized and discussed. High-k oxide insulators are deposited using atomic layer deposition (ALD) and sputtering deposition (SD) techniques. Electrical properties of the H-diamond MOS capacitors with high-k oxides of ALD-Al2O3, ALD-HfO2, ALD-HfO2\/ALD-Al2O3 multilayer, SD-HfO2\/ALD-HfO2 bilayer, SD-TiO2\/ALD-Al2O3 bilayer, and ALD-TiO2\/ALD-Al2O3 bilayer are discussed. Analyses for capacitance-voltage characteristics of them show that there are low fixed and trapped charge densities for the ALD-Al2O3\/H-diamond and SD-HfO2\/ALD-HfO2\/H-diamond MOS capacitors. The k value of 27.2 for the ALD-TiO2\/ALD-Al2O3 bilayer is larger than those of the other oxide insulators. Drain-source current versus voltage curves show distinct pitch-off and p-type channel characteristics for the ALD-Al2O3\/H-diamond, SD-HfO2\/ALD-HfO2\/H-diamond, and ALD-TiO2\/ALD-Al2O3\/H-diamond MOSFETs. Understanding of fabrication routines and electrical properties for the high-k oxide\/H-diamond MOS electronic devices is meaningful for the fabrication of high-performance H-diamond MOS capacitor and MOSFET gas sensors.<\/jats:p>","DOI":"10.3390\/s18061813","type":"journal-article","created":{"date-parts":[[2018,6,4]],"date-time":"2018-06-04T12:14:30Z","timestamp":1528114470000},"page":"1813","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":20,"title":["An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors"],"prefix":"10.3390","volume":"18","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-2580-7401","authenticated-orcid":false,"given":"Jiangwei","family":"Liu","sequence":"first","affiliation":[{"name":"Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Ibaraki, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yasuo","family":"Koide","sequence":"additional","affiliation":[{"name":"Research Network and Facility Services Division, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Ibaraki, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2018,6,4]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"645","DOI":"10.1109\/16.199372","article-title":"Comparison of 6H-SiC, 3C-SiC, and Si for power devices","volume":"40","author":"Bhatnagar","year":"1993","journal-title":"IEEE Tran. 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