{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,13]],"date-time":"2026-04-13T19:08:47Z","timestamp":1776107327383,"version":"3.50.1"},"reference-count":43,"publisher":"MDPI AG","issue":"7","license":[{"start":{"date-parts":[[2018,7,15]],"date-time":"2018-07-15T00:00:00Z","timestamp":1531612800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Silicon carbide (SiC) is a compound semiconductor, which is considered as a possible alternative to silicon for particles and photons detection. Its characteristics make it very promising for the next generation of nuclear and particle physics experiments at high beam luminosity. Silicon Carbide detectors for Intense Luminosity Investigations and Applications (SiCILIA) is a project starting as a collaboration between the Italian National Institute of Nuclear Physics (INFN) and IMM-CNR, aiming at the realization of innovative detection systems based on SiC. In this paper, we discuss the main features of silicon carbide as a material and its potential application in the field of particles and photons detectors, the project structure and the strategies used for the prototype realization, and the first results concerning prototype production and their performance.<\/jats:p>","DOI":"10.3390\/s18072289","type":"journal-article","created":{"date-parts":[[2018,7,16]],"date-time":"2018-07-16T04:05:33Z","timestamp":1531713933000},"page":"2289","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":71,"title":["SiCILIA\u2014Silicon Carbide Detectors for Intense Luminosity Investigations and Applications"],"prefix":"10.3390","volume":"18","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-9390-9912","authenticated-orcid":false,"given":"Salvatore","family":"Tudisco","sequence":"first","affiliation":[{"name":"Istituto Nazionale di Fisica Nucleare (INFN), Laboratori Nazionali del Sud (LNS), Via S. Sofia 62, 95123 Catania, Italy"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6842-581X","authenticated-orcid":false,"given":"Francesco","family":"La Via","sequence":"additional","affiliation":[{"name":"Istituto Nazionale di Fisica Nucleare (INFN), Laboratori Nazionali del Sud (LNS), Via S. Sofia 62, 95123 Catania, Italy"},{"name":"Institute for Microelectronics and Microsystems (IMM), National Research Council (CNR), VIII Strada, 5, 95121 Catania, Italy"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1605-4022","authenticated-orcid":false,"given":"Clementina","family":"Agodi","sequence":"additional","affiliation":[{"name":"Istituto Nazionale di Fisica Nucleare (INFN), Laboratori Nazionali del Sud (LNS), Via S. Sofia 62, 95123 Catania, Italy"}]},{"given":"Carmen","family":"Altana","sequence":"additional","affiliation":[{"name":"Istituto Nazionale di Fisica Nucleare (INFN), Laboratori Nazionali del Sud (LNS), Via S. Sofia 62, 95123 Catania, Italy"}]},{"given":"Giacomo","family":"Borghi","sequence":"additional","affiliation":[{"name":"Trento Institute for Fundamental Physics and Applications (TIFPA), National Institute for Nuclear Physics (INFN), Fondazione Bruno Kessler (FBK-Trento), Via Sommarive 14, 38123 Povo Trento, Italy"}]},{"given":"Maurizio","family":"Boscardin","sequence":"additional","affiliation":[{"name":"Trento Institute for Fundamental Physics and Applications (TIFPA), National Institute for Nuclear Physics (INFN), Fondazione Bruno Kessler (FBK-Trento), Via Sommarive 14, 38123 Povo Trento, Italy"}]},{"given":"Giancarlo","family":"Bussolino","sequence":"additional","affiliation":[{"name":"Istituto Nazionale di Ottica (INO), Consiglio Nazionale delle Ricerche (CNR), Via G. Moruzzi 1, 56124 Pisa, Italy"}]},{"given":"Lucia","family":"Calcagno","sequence":"additional","affiliation":[{"name":"Istituto Nazionale di Fisica Nucleare (INFN)\u2014Sezione di Catania, Italy"},{"name":"Department of Physics and Astronomy, University of Catania, Via S. Sofia 64 Catania, Italy"}]},{"given":"Massimo","family":"Camarda","sequence":"additional","affiliation":[{"name":"Paul Scherrer Institute, ODRA\/116, 5232 Villigen, Switzerland"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4333-1574","authenticated-orcid":false,"given":"Francesco","family":"Cappuzzello","sequence":"additional","affiliation":[{"name":"Istituto Nazionale di Fisica Nucleare (INFN), Laboratori Nazionali del Sud (LNS), Via S. Sofia 62, 95123 Catania, Italy"},{"name":"Department of Physics and Astronomy, University of Catania, Via S. 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Sofia 62, 95123 Catania, Italy"}]},{"given":"Caterina","family":"Ciampi","sequence":"additional","affiliation":[{"name":"Istituto Nazionale di Fisica Nucleare (INFN)\u2014Sezione di Firenze, Via G. Sansone 1, 50019 Sesto Fiorentino, Italy"},{"name":"Dipartimento di Fisica, Universit\u00e0 di Firenze, Via G. Sansone 1, 50019 Sesto Fiorentino, Italy"}]},{"given":"Giuseppe","family":"Cirrone","sequence":"additional","affiliation":[{"name":"Istituto Nazionale di Fisica Nucleare (INFN), Laboratori Nazionali del Sud (LNS), Via S. Sofia 62, 95123 Catania, Italy"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9534-4855","authenticated-orcid":false,"given":"Giacomo","family":"Cuttone","sequence":"additional","affiliation":[{"name":"Istituto Nazionale di Fisica Nucleare (INFN), Laboratori Nazionali del Sud (LNS), Via S. 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Sofia 64 Catania, Italy"}]},{"given":"Nicol\u00f2","family":"Piluso","sequence":"additional","affiliation":[{"name":"STMicroelectronics, Stradale Primosole, 50, 95121 Catania, Italy"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5026-3322","authenticated-orcid":false,"given":"Giacomo","family":"Poggi","sequence":"additional","affiliation":[{"name":"Istituto Nazionale di Fisica Nucleare (INFN)\u2014Sezione di Firenze, Via G. Sansone 1, 50019 Sesto Fiorentino, Italy"},{"name":"Dipartimento di Fisica, Universit\u00e0 di Firenze, Via G. Sansone 1, 50019 Sesto Fiorentino, Italy"}]},{"given":"Stefania","family":"Privitera","sequence":"additional","affiliation":[{"name":"Institute for Microelectronics and Microsystems (IMM), National Research Council (CNR), VIII Strada, 5, 95121 Catania, Italy"}]},{"given":"Sebastiana","family":"Puglia","sequence":"additional","affiliation":[{"name":"Istituto Nazionale di Fisica Nucleare (INFN), Laboratori Nazionali del Sud (LNS), Via S. 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Int."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"125","DOI":"10.1016\/S0927-796X(97)00005-3","article-title":"Step-controlled epitaxial growth of SiC: High quality homoepitaxy","volume":"20","author":"Matsunami","year":"1997","journal-title":"Mater. Sci. Eng."},{"key":"ref_4","unstructured":"(2018, July 12). Available online: www.ioffe.ru\/SVA\/NSM\/Semicond\/SiC."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"31301","DOI":"10.1063\/1.4890974","article-title":"Mechanisms of growth and defect properties of epitaxial SiC","volume":"1","author":"Camarda","year":"2014","journal-title":"Appl. Phys. Rev."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"48","DOI":"10.1016\/j.mee.2005.10.023","article-title":"High growth rate process in a SiC horizontal CVD reactor using HCl","volume":"83","author":"Galvagno","year":"2006","journal-title":"Microelectron. Eng."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"043523","DOI":"10.1063\/1.2767248","article-title":"Optical and electrical properties of 4H-SiC epitaxial layer grown with HCl addition","volume":"102","author":"Calcagno","year":"2007","journal-title":"J. Appl. Phys."},{"key":"ref_8","first-page":"163","article-title":"Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process","volume":"527\u2013529","author":"Galvagno","year":"2006","journal-title":"Mater. Sci. Forum"},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"107","DOI":"10.1016\/j.jcrysgro.2008.10.041","article-title":"4H-SiC epitaxial layer growth by trichlorosilane (TCS)","volume":"311","author":"Izzo","year":"2008","journal-title":"J. Cryst. Growth"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"179","DOI":"10.4028\/www.scientific.net\/MSF.527-529.179","article-title":"SiC-4H epitaxial layer growth using trichlorosilane (TCS) as silicon precursor","volume":"527","author":"Leone","year":"2006","journal-title":"Mater. Sci. Forum"},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"939","DOI":"10.1016\/j.susc.2010.02.025","article-title":"Stacking faults evolution during epitaxial growths: Role of surface the kinetics","volume":"604","author":"Camarda","year":"2010","journal-title":"Surf. Sci."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"04010","DOI":"10.7567\/JJAP.54.040103","article-title":"Material science and device physics in SiC technology for high-voltage power devices","volume":"54","author":"Kimoto","year":"2015","journal-title":"Jpn. J. Appl. Phys."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"036601","DOI":"10.7567\/APEX.10.036601","article-title":"Electrical properties of extended defects in 4H-SiC investigated by photoinduced current measurements","volume":"10","author":"Privitera","year":"2017","journal-title":"Appl. Phys. Express"},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"021905","DOI":"10.1063\/1.1849416","article-title":"Structure of the carrot defect in 4H-SiC epitaxial layers","volume":"86","author":"Benamara","year":"2005","journal-title":"Appl. Phys. Lett."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"254","DOI":"10.1016\/j.jcrysgro.2007.05.006","article-title":"Investigation of defect formation in 4H-SiC epitaxial growth by X-ray topography and defect selective etching","volume":"306","author":"Tsuchida","year":"2007","journal-title":"J. Cryst. Growth"},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"67","DOI":"10.1016\/S0921-5093(03)00520-3","article-title":"Crystallographic defects under device-killing surface faults in a homoepitaxially grown film of SiC","volume":"361","author":"Okada","year":"2003","journal-title":"Mater. Sci. Eng. A"},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"529","DOI":"10.1002\/1521-3951(199707)202:1<529::AID-PSSB529>3.0.CO;2-E","article-title":"Process-Induced Morphological Defects in Epitaxial CVD Silicon Carbide","volume":"202","author":"Powell","year":"1997","journal-title":"Phys. Status Solidi B"},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"3315","DOI":"10.1143\/JJAP.40.3315","article-title":"Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition","volume":"40","author":"Kimoto","year":"2001","journal-title":"Jpn. J. Appl. Phys."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"495","DOI":"10.1016\/S0022-0248(97)00007-9","article-title":"The mechanism for cubic SiC formation on off-oriented substrates","volume":"178","author":"Konstationov","year":"1997","journal-title":"J. Cryst. Growth"},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"971","DOI":"10.1016\/j.jcrysgro.2007.11.132","article-title":"Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study","volume":"310","author":"Camarda","year":"2008","journal-title":"J. Cryst. Growth"},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"1436","DOI":"10.1109\/TNS.2013.2252019","article-title":"X-\u03b3 Ray Spectroscopy with Semi-Insulating 4H-Silicon Carbide","volume":"60","author":"Bertuccio","year":"2013","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"20","DOI":"10.1016\/j.nima.2012.01.047","article-title":"Radiation hardness of a wide-bandgap material by the example of SiC nuclear radiation detectors","volume":"675","author":"Ivanov","year":"2012","journal-title":"Nucl. Instrum. Methods Phys. Res. A"},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"784","DOI":"10.1016\/j.nuclphysa.2010.01.146","article-title":"Detection Properties and Radiation Damage Effects in SiC Diodes Irradiated with Light Ions","volume":"834","author":"Raciti","year":"2010","journal-title":"Nucl. Phys. A"},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"645","DOI":"10.1016\/S0168-9002(02)01558-9","article-title":"Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays","volume":"505","author":"Nava","year":"2003","journal-title":"Nucl. Instrum. Methods Phys. Res. A"},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"093711","DOI":"10.1063\/1.3018456","article-title":"Electrical properties of high energy ion irradiated 4H-SiC4H-SiC Schottky diodes","volume":"104","author":"Izzo","year":"2008","journal-title":"J. Appl. Phys."},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"306","DOI":"10.1016\/j.sna.2007.05.016","article-title":"Single photon avalanche photodiodes arrays","volume":"138","author":"Mazzillo","year":"2007","journal-title":"Sens. Actuators A Phys."},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"095001","DOI":"10.1088\/0741-3335\/56\/9\/095001","article-title":"Investigation on laser\u2013plasma coupling in intense, ultrashort irradiation of a nanostructured silicon target","volume":"56","author":"Cristoforetti","year":"2014","journal-title":"Plasma Phys. Controll. Fusion"},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"72","DOI":"10.1140\/epja\/i2018-12509-3","article-title":"The NUMEN project: NUclear Matrix Elements for Neutrinoless double beta decay","volume":"54","author":"Cappuzzello","year":"2018","journal-title":"Eur. Phys. J. A"},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"012018","DOI":"10.1088\/1742-6596\/630\/1\/012018","article-title":"The role of nuclear reactions in the problem of 0\u03bd\u03b2\u03b2 decay and the NUMEN project at INFN-LNS","volume":"630","author":"Cappuzzello","year":"2015","journal-title":"J. Phys. Conf. Ser."},{"key":"ref_30","first-page":"S37","article-title":"Laser driven nuclear physics at ELI-NP","volume":"68","author":"Negoita","year":"2016","journal-title":"Roman. Rep. Phys."},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"174","DOI":"10.1016\/j.nima.2013.05.051","article-title":"ELIMED, future hadrontherapy applications of laser-accelerated beams","volume":"730","author":"Cirrone","year":"2013","journal-title":"Nucl. Instrum. Methods Phys. Res. A"},{"key":"ref_32","unstructured":"The FAZIA Collaboration, Bougault, R., Poggi, G., Barlini, S., Borderie, B., Casini, G., Chbihi, A., Le Neindre, N., P\u00e2rlog, M., and Pasquali, G. (2014). The FAZIA project in Europe: R&D phase. Eur. Phys. J. A, 50, 47."},{"key":"ref_33","unstructured":"Knoll, G.F. (2010). Radiation Detection and Measurement, John Wiley & Sons."},{"key":"ref_34","doi-asserted-by":"crossref","first-page":"2421","DOI":"10.1109\/TNS.2006.877860","article-title":"Possibility of Subelectron Noise with Room-Temperature Silicon Carbide Pixel Detectors","volume":"53","author":"Bertuccio","year":"2006","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_35","unstructured":"(2018, July 12). Available online: http:\/\/www.lpe-epi.com\/pe106.aspx?sm=sm21."},{"key":"ref_36","unstructured":"(2018, July 12). Available online: https:\/\/www.kla-tencor.com\/Compound-Semiconductor-Manufacturing\/candela-cs920.html."},{"key":"ref_37","first-page":"55","article-title":"Thick epitaxial layers growth by chlorine addition","volume":"615\u2013617","author":"Izzo","year":"2009","journal-title":"Mater. Sci. Forum"},{"key":"ref_38","doi-asserted-by":"crossref","first-page":"202109","DOI":"10.1063\/1.2740580","article-title":"Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation","volume":"90","author":"Danno","year":"2007","journal-title":"Appl. Phys. Lett."},{"key":"ref_39","doi-asserted-by":"crossref","first-page":"041101","DOI":"10.1143\/APEX.2.041101","article-title":"Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation","volume":"2","author":"Hiyoshi","year":"2009","journal-title":"Appl. Phys. Express"},{"key":"ref_40","doi-asserted-by":"crossref","first-page":"375","DOI":"10.1016\/S0167-9317(00)00470-6","article-title":"Structural characterization of titanium silicon carbide reaction","volume":"55","author":"Makhtari","year":"2001","journal-title":"Microelectron. Eng."},{"key":"ref_41","doi-asserted-by":"crossref","first-page":"1931","DOI":"10.1109\/TNS.2004.832308","article-title":"Wide-dynamic-range fast preamplifier for pulse shape analysis of signals from high-capacitance detectors","volume":"51","author":"Bojano","year":"2004","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_42","doi-asserted-by":"crossref","first-page":"684","DOI":"10.1016\/j.nima.2005.11.158","article-title":"Measurement of the thickness of an insensitive surface layer of a PIN photodiode","volume":"557","author":"Akimoto","year":"2006","journal-title":"Nucl. Instrum. Methods Phys. Res. A"},{"key":"ref_43","unstructured":"(2018, July 12). Available online: http:\/\/www.srim.org\/."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/18\/7\/2289\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T15:12:15Z","timestamp":1760195535000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/18\/7\/2289"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,7,15]]},"references-count":43,"journal-issue":{"issue":"7","published-online":{"date-parts":[[2018,7]]}},"alternative-id":["s18072289"],"URL":"https:\/\/doi.org\/10.3390\/s18072289","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2018,7,15]]}}}