{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,17]],"date-time":"2026-04-17T15:54:06Z","timestamp":1776441246607,"version":"3.51.2"},"reference-count":22,"publisher":"MDPI AG","issue":"8","license":[{"start":{"date-parts":[[2018,8,1]],"date-time":"2018-08-01T00:00:00Z","timestamp":1533081600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61431019"],"award-info":[{"award-number":["61431019"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100004826","name":"Natural Science Foundation of Beijing Municipality","doi-asserted-by":"publisher","award":["4152056"],"award-info":[{"award-number":["4152056"]}],"id":[{"id":"10.13039\/501100004826","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>This paper presents a resonant pressure microsensor relying on electrostatic excitation and piezoresistive detection where two double-ended tuning forks were used as resonators, enabling differential outputs. Pressure under measurement caused the deformation of the pressure sensitive membrane, leading to stress buildup of the resonator under electrostatic excitation with a corresponding shift of the resonant frequency detected piezoresistively. The proposed microsensor was fabricated by simplified SOI-MEMS technologies and characterized by both open-loop and closed-loop circuits, producing a quality factor higher than 10,000, a sensitivity of 79.44 Hz\/kPa and an accuracy rate of over 0.01% F.S. In comparison to the previously reported resonant piezoresistive sensors, the proposed device used single-crystal silicon as piezoresistors, which was featured with low DC biased voltages, simple sensing structures and fabrication steps. In addition, the two double-ended tuning forks were used as resonators, producing high quality factors and differential outputs, which further improved the sensor performances.<\/jats:p>","DOI":"10.3390\/s18082494","type":"journal-article","created":{"date-parts":[[2018,8,1]],"date-time":"2018-08-01T11:22:34Z","timestamp":1533122554000},"page":"2494","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":24,"title":["A Resonant Pressure Microsensor Based on Double-Ended Tuning Fork and Electrostatic Excitation\/Piezoresistive Detection"],"prefix":"10.3390","volume":"18","author":[{"given":"Xiaoqing","family":"Shi","sequence":"first","affiliation":[{"name":"State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China"},{"name":"University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3826-5998","authenticated-orcid":false,"given":"Yulan","family":"Lu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China"},{"name":"University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bo","family":"Xie","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yadong","family":"Li","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China"},{"name":"University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Junbo","family":"Wang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China"},{"name":"University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Deyong","family":"Chen","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China"},{"name":"University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4612-3279","authenticated-orcid":false,"given":"Jian","family":"Chen","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China"},{"name":"University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2018,8,1]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"5","DOI":"10.1088\/0964-1726\/6\/5\/004","article-title":"Micromachined pressure sensors: Review and recent developments","volume":"6","author":"Eaton","year":"1997","journal-title":"Smart Mater. Struct."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"147","DOI":"10.1016\/S0924-4247(00)00385-X","article-title":"Cmos-compatible capacitive high temperature pressure sensors","volume":"85","author":"Kasten","year":"2000","journal-title":"Sens. Actuators A"},{"key":"ref_3","doi-asserted-by":"crossref","unstructured":"Zhang, Y., Howver, R., Gogoi, B., and Yazdi, N. (2011, January 5\u20139). A high-sensitive ultra-thin mems capacitive pressure sensor. Proceedings of the 16th IEEE International Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), Beijing, China.","DOI":"10.1109\/TRANSDUCERS.2011.5969151"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"514","DOI":"10.1109\/84.809067","article-title":"A simulation program for the sensitivity and linearity of piezoresistive pressure sensors","volume":"8","author":"Lin","year":"1999","journal-title":"J. Microelectromech. Syst."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"4531","DOI":"10.1007\/s00542-016-3187-6","article-title":"Design and optimization of a novel structural MEMS piezoresistive pressure sensor","volume":"23","author":"Li","year":"2017","journal-title":"Microsyst. Technol."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"114318","DOI":"10.1063\/1.2401312","article-title":"Flexible piezoelectric pressure sensors using oriented aluminum nitride thin films prepared on polyethylene terephthalate films","volume":"100","author":"Akiyama","year":"2006","journal-title":"J. Appl. Phys."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"469","DOI":"10.1016\/S1359-0286(98)80009-0","article-title":"Materials for high temperature piezoelectric transducers","volume":"3","author":"Damjanovic","year":"1998","journal-title":"Curr. Opin. Solid State Mater. Sci."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"104","DOI":"10.1016\/j.proche.2009.07.026","article-title":"Advances in silicon resonant pressure transducers","volume":"1","author":"Kinnell","year":"2009","journal-title":"Procedia Chem."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"146","DOI":"10.1016\/0924-4247(90)85028-3","article-title":"Silicon pressure sensor integrates resonant strain gauge on diaphragm","volume":"21","author":"Ikeda","year":"1990","journal-title":"Sens. Actuators A"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"179","DOI":"10.1016\/S0924-4247(97)80111-2","article-title":"Temperature compensation of silicon resonant pressure sensor","volume":"57","year":"1996","journal-title":"Sens. Actuators A"},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"012042","DOI":"10.1088\/1742-6596\/188\/1\/012042","article-title":"A silicon micromachined resonant pressure sensor","volume":"188","author":"Tang","year":"2009","journal-title":"J. Phys. Conf. Ser."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"1481","DOI":"10.1007\/s00542-011-1319-6","article-title":"An electrothermally excited dual beams silicon resonant pressure sensor with temperature compensation","volume":"17","author":"Tang","year":"2011","journal-title":"Microsyst. Technol."},{"key":"ref_13","doi-asserted-by":"crossref","unstructured":"Wang, J., Shi, X., Liu, L., Wu, Z., Chen, D., Zhao, J., and Li, S. (2008, January 16\u201319). A novel resonant pressure sensor with boron diffused silicon resonator. Proceedings of the 2008 International Conference on Optical Instruments and Technology: MEMS\/NEMS Technology and Applications, Beijing, China.","DOI":"10.1117\/12.811759"},{"key":"ref_14","doi-asserted-by":"crossref","unstructured":"Wang, J., Chen, D., Liu, L., and Wu, Z. (2009, January 25\u201328). A micromachined resonant pressure sensor with DETFs resonator and differential structure. Proceedings of the IEEE Sensors 2009 Conference, Christchurch Convention Centre, Christchurch, New Zealand.","DOI":"10.1109\/ICSENS.2009.5398404"},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"1490","DOI":"10.1016\/j.proeng.2010.09.399","article-title":"Design and experiment of a laterally driven micromachined resonant pressure sensor for barometers","volume":"5","author":"Chen","year":"2010","journal-title":"Procedia Eng."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"298","DOI":"10.1016\/S0924-4247(99)00065-5","article-title":"A high accuracy resonant pressure sensor by fusion bonding and trench etching","volume":"76","author":"Welham","year":"1999","journal-title":"Sens. Actuators A"},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"45","DOI":"10.1109\/62.149795","article-title":"Resonant sensors for high accuracy pressure measurement using silicon technology","volume":"7","author":"Parsons","year":"1992","journal-title":"IEEE Aerosp. Electron. Syst. Mag."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"86","DOI":"10.1016\/0924-4247(96)80130-0","article-title":"A laterally driven micromachined resonant pressure sensor","volume":"52","author":"Welham","year":"1996","journal-title":"Sens. Actuators A"},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"82","DOI":"10.1016\/0924-4247(93)80017-B","article-title":"High accuracy pressure measurement with a silicon resonant sensor","volume":"37","author":"Greenwood","year":"1993","journal-title":"Sens. Actuators A"},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"24257","DOI":"10.3390\/s150924257","article-title":"A lateral differential resonant pressure microsensor based on soi-glass wafer-level vacuum packaging","volume":"15","author":"Xie","year":"2015","journal-title":"Sensors"},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"24244","DOI":"10.3390\/s141224244","article-title":"A high-q resonant pressure microsensor with through-glass electrical interconnections based on wafer-level MEMS vacuum packaging","volume":"14","author":"Luo","year":"2014","journal-title":"Sensors"},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"10048","DOI":"10.3390\/s150510048","article-title":"A resonant pressure microsensor capable of self-temperature compensation","volume":"15","author":"Li","year":"2015","journal-title":"Sensors"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/18\/8\/2494\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T15:15:46Z","timestamp":1760195746000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/18\/8\/2494"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,8,1]]},"references-count":22,"journal-issue":{"issue":"8","published-online":{"date-parts":[[2018,8]]}},"alternative-id":["s18082494"],"URL":"https:\/\/doi.org\/10.3390\/s18082494","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2018,8,1]]}}}