{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,22]],"date-time":"2026-01-22T00:58:54Z","timestamp":1769043534583,"version":"3.49.0"},"reference-count":27,"publisher":"MDPI AG","issue":"9","license":[{"start":{"date-parts":[[2018,8,23]],"date-time":"2018-08-23T00:00:00Z","timestamp":1534982400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/100006503","name":"Space and Naval Warfare Systems Command","doi-asserted-by":"publisher","award":["N66001-18-P-0090"],"award-info":[{"award-number":["N66001-18-P-0090"]}],"id":[{"id":"10.13039\/100006503","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>We have pioneered the use of liquid polar organic molecules as alternatives to rigid gate-dielectrics for the fabrication of graphene field-effect transistors. The unique high net dipole moment of various polar organic molecules allows for easy manipulation of graphene\u2019s conductivity due to the formation of an electrical double layer with a high-capacitance at the liquid and graphene interface. Here, we compare the performances of dimethyl sulfoxide (DMSO), acetonitrile, propionamide, and valeramide as polar organic liquid dielectrics in graphene field-effect transistors (GFETs). We demonstrate improved performance for a GFET with a liquid dielectric comprised of DMSO with high electron and hole mobilities of 154.0 cm2\/Vs and 154.6 cm2\/Vs, respectively, and a Dirac voltage &lt;5 V.<\/jats:p>","DOI":"10.3390\/s18092774","type":"journal-article","created":{"date-parts":[[2018,8,24]],"date-time":"2018-08-24T03:42:31Z","timestamp":1535082151000},"page":"2774","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":9,"title":["Polar Organic Gate Dielectrics for Graphene Field-Effect Transistor-Based Sensor Technology"],"prefix":"10.3390","volume":"18","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-8634-8996","authenticated-orcid":false,"given":"Kevin A.","family":"Kam","sequence":"first","affiliation":[{"name":"Department of Electrical Engineering, University of Hawai\u2019i at Manoa, Honolulu, HI 96822, USA"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9112-4871","authenticated-orcid":false,"given":"Brianne I. C.","family":"Tengan","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, University of Hawai\u2019i at Manoa, Honolulu, HI 96822, USA"}]},{"given":"Cody K.","family":"Hayashi","sequence":"additional","affiliation":[{"name":"Space and Naval Warfare Systems Command of the Pacific, Pearl City, HI 96782, USA"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9954-3181","authenticated-orcid":false,"given":"Richard C.","family":"Ordonez","sequence":"additional","affiliation":[{"name":"Space and Naval Warfare Systems Command of the Pacific, Pearl City, HI 96782, USA"}]},{"given":"David G.","family":"Garmire","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, University of Hawai\u2019i at Manoa, Honolulu, HI 96822, USA"}]}],"member":"1968","published-online":{"date-parts":[[2018,8,23]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"7037","DOI":"10.1039\/C6NR08687J","article-title":"Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films","volume":"9","author":"Shang","year":"2017","journal-title":"Nanoscale"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"1521","DOI":"10.1109\/JMEMS.2010.2082500","article-title":"Strain Effect of the Dielectric Constant in Silicon Dioxide","volume":"19","author":"Huang","year":"2010","journal-title":"J. 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