{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T04:03:50Z","timestamp":1760241830182,"version":"build-2065373602"},"reference-count":23,"publisher":"MDPI AG","issue":"9","license":[{"start":{"date-parts":[[2018,8,24]],"date-time":"2018-08-24T00:00:00Z","timestamp":1535068800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100004663","name":"Ministry of Science and Technology, Taiwan","doi-asserted-by":"publisher","award":["MOST 107-2218-E-003-004"],"award-info":[{"award-number":["MOST 107-2218-E-003-004"]}],"id":[{"id":"10.13039\/501100004663","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>InAlN\/Al\/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (&lt;60 mV\/dec) are demonstrated in this study, and attributed to displacement charge transition effects. The material analysis with High-Resolution X-ray Diffraction (HR-XRD) and the relaxation by reciprocal space mapping (RSM) are performed to confirm indium barrier composition and epitaxy quality. The proposed InAlN barrier HEMTs exhibits high ON\/OFF ratio with seven magnitudes and a steep threshold swing (SS) is also obtained with SS = 99 mV\/dec for forward sweep and SS = 28 mV\/dec for reverse sweep. For GaN-based HEMT directly on Si, this study displays outstanding performance with high ON\/OFF ratio and SS &lt; 60 mV\/dec behaviors.<\/jats:p>","DOI":"10.3390\/s18092795","type":"journal-article","created":{"date-parts":[[2018,8,24]],"date-time":"2018-08-24T11:13:45Z","timestamp":1535109225000},"page":"2795","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["Steep Switching of In0.18Al0.82N\/AlN\/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications"],"prefix":"10.3390","volume":"18","author":[{"given":"Pin-Guang","family":"Chen","sequence":"first","affiliation":[{"name":"Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan"},{"name":"National Nano Device Laboratories, Hsinchu 30078, Taiwan"}]},{"given":"Kuan-Ting","family":"Chen","sequence":"additional","affiliation":[{"name":"Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan"}]},{"given":"Ming","family":"Tang","sequence":"additional","affiliation":[{"name":"Device Design Division, PTEK Technology Co., Ltd., Hsinchu 30059, Taiwan"}]},{"given":"Zheng-Ying","family":"Wang","sequence":"additional","affiliation":[{"name":"Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan"}]},{"given":"Yu-Chen","family":"Chou","sequence":"additional","affiliation":[{"name":"Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2007-2875","authenticated-orcid":false,"given":"Min-Hung","family":"Lee","sequence":"additional","affiliation":[{"name":"Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan"}]}],"member":"1968","published-online":{"date-parts":[[2018,8,24]]},"reference":[{"key":"ref_1","unstructured":"Pearton, S., Hull, R., Jagadish, C., Osgood, R.M., Parisi, J., and Wang, Z. (2011). GaN and ZnO-Based Materials and Devices, Springer. Chapter 6."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"305","DOI":"10.1016\/S0925-4005(03)00008-X","article-title":"GAN thin films as gas sensor","volume":"89","author":"Lee","year":"2003","journal-title":"Sens. Actuators B"},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"982","DOI":"10.1109\/LED.2012.2196673","article-title":"3000-V 4.3-m\u03a9\u00b7cm2 InAlN\/GaN MOSHEMTs With AlGaN Back Barrier","volume":"33","author":"Lee","year":"2012","journal-title":"IEEE Electron Device Lett."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"904","DOI":"10.1109\/LED.2009.2026718","article-title":"Gate-Recessed InAlN\/GaN HEMTs on SiC Substrate With Al2O3 Passivation","volume":"30","author":"Chung","year":"2009","journal-title":"IEEE Electron Device Lett."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"1537","DOI":"10.1109\/LED.2011.2166949","article-title":"InAlN\/GaN HEMTs on Sapphire Substrate with 2.9-W\/mm Output Power Density at 18 GHz","volume":"32","author":"Lecourt","year":"2011","journal-title":"IEEE Electron Device Lett."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"985","DOI":"10.1109\/LED.2012.2196972","article-title":"InAlN\/GaN HEMTs for Operation in the 1000 \u00b0C Regime: A First Experiment","volume":"33","author":"Maier","year":"2012","journal-title":"IEEE Electron Device Lett."},{"key":"ref_7","unstructured":"Zhou, Q., Huang, S., Chen, H., Zhou, C., Feng, Z., Cai, S., and Chen, K.J. (2011, January 5\u20137). Schottky source\/drain Al2O3\/InAlN\/GaN MIS-HEMT with steep sub-threshold swing and high ON\/OFF current ratio. Proceedings of the 2011 International Electron Devices Meeting, Washington, DC, USA."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"259","DOI":"10.1109\/LED.2015.2389611","article-title":"Indium-Based Ternary Barrier High-Electron-Mobility Transistors on Si Substrate With High ON\/OFF Ratio for Power Applications","volume":"36","author":"Chen","year":"2015","journal-title":"IEEE Electron Device Lett."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"206","DOI":"10.1016\/j.sse.2016.11.002","article-title":"In0.18Al0.82N\/AlN\/GaN MIS-HEMT on Si with Schottky-drain contact","volume":"129","author":"Chen","year":"2017","journal-title":"Solid State Electron."},{"key":"ref_10","unstructured":"Then, H.W., Dasgupta, S., Radosavljevic, M., Chow, L., Chu-Kung, B., Dewey, G., Gardner, S., Gao, X., Kavalieros, J., and Mukherjee, N. (2013, January 9\u201311). Experimental observation and physics of \u201cnegative\u201d capacitance and steeper than 40 mV\/decade subthreshold swing in Al0.83In0.17N\/AlN\/GaN MOS-HEMT on SiC substrate. Proceedings of the 2013 IEEE International Electron Devices Meeting, Washington, DC, USA."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"2","DOI":"10.1186\/s40580-018-0135-4","article-title":"Steep switching devices for low power applications: Negative differential capacitance\/resistance field effect transistors","volume":"5","author":"Ko","year":"2018","journal-title":"Nano Converg."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"411","DOI":"10.1016\/S0038-1098(03)00457-5","article-title":"Universal bandgap bowing in group-III nitride alloys","volume":"127","author":"Wu","year":"2003","journal-title":"Solid State Commun."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"377","DOI":"10.1109\/JEDS.2015.2435492","article-title":"Ferroelectricity of HfZrO2 in Energy Landscape with Surface Potential Gain for Low-Power Steep-Slope Transistors","volume":"3","author":"Lee","year":"2015","journal-title":"IEEE J. Electron Device Soc."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"294","DOI":"10.1109\/LED.2015.2402517","article-title":"Steep Slope and Near Non-Hysteresis of FETs with Antiferroelectric-Like HfZrO for Low-Power Electronics","volume":"36","author":"Lee","year":"2015","journal-title":"IEEE Electron Device Lett."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"681","DOI":"10.1109\/LED.2015.2430332","article-title":"Threshold Selector with High Selectivity and Steep Slope for Cross-Point Memory Array","volume":"36","author":"Song","year":"2015","journal-title":"IEEE Electron Device Lett."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"2423","DOI":"10.1109\/TED.2013.2264101","article-title":"Hetero-Tunnel Field-Effect-Transistors with Epitaxially Grown Germanium on Silicon","volume":"60","author":"Lee","year":"2013","journal-title":"IEEE Trans. Electron Device"},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"093714","DOI":"10.1063\/1.2917290","article-title":"Two-dimensional electron gas density in Al1\u2212xInxN\/AlN\/GaN heterostructures (0.03 \u2264 x \u2264 0.23)","volume":"103","author":"Gonschorek","year":"2008","journal-title":"J. Appl. Phys."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"976","DOI":"10.1109\/LED.2012.2194691","article-title":"Impact of Al2O3 Passivation Thickness in Highly Scaled GaN HEMTs","volume":"33","author":"Lee","year":"2012","journal-title":"IEEE Electron Device Lett."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"309","DOI":"10.1109\/LED.2010.2095494","article-title":"Enhancement-Mode InAlN\/AlN\/GaN HEMTs with 10\u221212 A\/mm Leakage Current and 1012 ON\/OFF Current Ratio","volume":"32","author":"Wang","year":"2011","journal-title":"IEEE Electron Device Lett."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"1383","DOI":"10.1109\/LED.2010.2072771","article-title":"Gate-Recessed Enhancement-Mode InAlN\/AlN\/GaN HEMTs with 1.9-A\/mm Drain Current Density and 800-mS\/mm Transconductance","volume":"31","author":"Wang","year":"2010","journal-title":"IEEE Electron Device Lett."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"432","DOI":"10.1109\/LED.2013.2241388","article-title":"Schottky-Barrier Normally Off GaN\/InAlN\/AlN\/GaN HEMT With Selectively Etched Access Region","volume":"34","author":"Jurkovic","year":"2013","journal-title":"IEEE Electron Device Lett."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"755","DOI":"10.1109\/LED.2011.2132751","article-title":"245-GHz InAlN\/GaN HEMTs With Oxygen Plasma Treatment","volume":"32","author":"Lee","year":"2011","journal-title":"IEEE Electron Device Lett."},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"84","DOI":"10.1149\/2.007405jss","article-title":"InxAl1\u2212xN\/AlN\/GaN High Electron Mobility Transistor Structures on 200 mm Diameter Si(111) Substrates with Au-Free Device Processing","volume":"3","author":"Tripathy","year":"2014","journal-title":"ECS J. Solid State Sci. Technol."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/18\/9\/2795\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T15:20:58Z","timestamp":1760196058000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/18\/9\/2795"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,8,24]]},"references-count":23,"journal-issue":{"issue":"9","published-online":{"date-parts":[[2018,9]]}},"alternative-id":["s18092795"],"URL":"https:\/\/doi.org\/10.3390\/s18092795","relation":{},"ISSN":["1424-8220"],"issn-type":[{"type":"electronic","value":"1424-8220"}],"subject":[],"published":{"date-parts":[[2018,8,24]]}}}