{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,30]],"date-time":"2026-01-30T07:24:55Z","timestamp":1769757895381,"version":"3.49.0"},"reference-count":39,"publisher":"MDPI AG","issue":"11","license":[{"start":{"date-parts":[[2018,10,30]],"date-time":"2018-10-30T00:00:00Z","timestamp":1540857600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>This paper presents an in-situ storage topology for ultra-high-speed burst mode imagers, enabling low noise operation while keeping a high frame depth. The proposed pixel architecture contains a 4T pinned photodiode, a correlated double sampling (CDS) amplification stage, and an in-situ memory bank. Focusing on the sampling noise, the system level trade-off of the proposed pixel architecture is discussed, showing its advantages on the noise, power, and scaling capability. Integrated with an AC coupling CDS stage, the amplification is obtained by exploiting the strong capacitance to the voltage relation of a single NMOS transistor. A comprehensive noise model is developed for optimizing the trade-off between the area and noise. As a proof-of-concept, a prototype imager with a 30 \u00b5m pixel pitch was fabricated in a CMOS 130 nm technology. A 108-cell memory bank is implemented allowing dense layout and parallel readout. Two types of CDS amplification stages were investigated. Despite the limited memory capacitance of 10 fF\/cell, the photon transfer curves of both pixel types were measured over different operation speeds up to 20 Mfps showing a noise performance of 8.4 e\u2212.<\/jats:p>","DOI":"10.3390\/s18113683","type":"journal-article","created":{"date-parts":[[2018,10,31]],"date-time":"2018-10-31T03:50:56Z","timestamp":1540957856000},"page":"3683","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":7,"title":["Analysis and Design of a CMOS Ultra-High-Speed Burst Mode Imager with In-Situ Storage Topology Featuring In-Pixel CDS Amplification"],"prefix":"10.3390","volume":"18","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-2910-9726","authenticated-orcid":false,"given":"Linkun","family":"Wu","sequence":"first","affiliation":[{"name":"Imec, 3001 Heverlee, Belgium"},{"name":"Department of Electronics and informatics (ETRO), Vrije Universiteit Brussel, 1050 Brussels, Belgium"}]},{"given":"David","family":"San Segundo Bello","sequence":"additional","affiliation":[{"name":"Imec, 3001 Heverlee, Belgium"}]},{"given":"Philippe","family":"Coppejans","sequence":"additional","affiliation":[{"name":"Imec, 3001 Heverlee, Belgium"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3980-0203","authenticated-orcid":false,"given":"Jan","family":"Craninckx","sequence":"additional","affiliation":[{"name":"Imec, 3001 Heverlee, Belgium"}]},{"given":"Andreas","family":"S\u00fcss","sequence":"additional","affiliation":[{"name":"Imec, 3001 Heverlee, Belgium"}]},{"given":"Maarten","family":"Rosmeulen","sequence":"additional","affiliation":[{"name":"Imec, 3001 Heverlee, Belgium"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4388-7257","authenticated-orcid":false,"given":"Piet","family":"Wambacq","sequence":"additional","affiliation":[{"name":"Imec, 3001 Heverlee, Belgium"},{"name":"Department of Electronics and informatics (ETRO), Vrije Universiteit Brussel, 1050 Brussels, Belgium"}]},{"given":"Jonathan","family":"Borremans","sequence":"additional","affiliation":[{"name":"Imec, 3001 Heverlee, Belgium"}]}],"member":"1968","published-online":{"date-parts":[[2018,10,30]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"44018","DOI":"10.1103\/PhysRevApplied.3.044018","article-title":"Drop Shaping by Laser-Pulse Impact","volume":"3","author":"Klein","year":"2015","journal-title":"Phys. Rev. Appl."},{"key":"ref_2","doi-asserted-by":"crossref","unstructured":"Hayashi, J., Nakatsuka, N., Morimoto, I., and Akamatsu, F. (2016, January 7\u201310). Time evolution of the high temperature region formed by laser induced breakdown and of the development of the flame kernel in the constant volume combustion vessel. Proceedings of the 31st International Congress on High-Speed Imaging and Photonics, Osaka, Japan.","DOI":"10.1117\/12.2268728"},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"294","DOI":"10.1016\/j.biomaterials.2016.01.022","article-title":"Sonoprinting and the importance of microbubble loading for the ultrasound mediated cellular delivery of nanoparticles","volume":"83","author":"Lajoinie","year":"2016","journal-title":"Biomaterials"},{"key":"ref_4","doi-asserted-by":"crossref","unstructured":"Yamanouchi, K. (2017). Extreme Imaging and Beyond. Progress in Photon Science, Springer.","DOI":"10.1007\/978-3-319-52431-3"},{"key":"ref_5","doi-asserted-by":"crossref","unstructured":"Etoh, G.T., Nguyen, Q.A., Kamakura, Y., Shimonomura, K., Le, Y.T., and Mori, N. (2017). The Theoretical Highest Frame Rate of Silicon Image Sensors. Sensors, 17.","DOI":"10.3390\/s17030483"},{"key":"ref_6","unstructured":"(2017, September 21). Sony Corporation Sony Develops the Industry\u2019s First 3-Layer Stacked CMOS Image Sensor with DRAM for Smartphones. Available online: https:\/\/www.sony.net\/SonyInfo\/News\/Press\/201702\/17-013E\/."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"5026","DOI":"10.1063\/1.1626013","article-title":"Brandaris 128: A digital 25 million frames per second camera with 128 highly sensitive frames","volume":"74","author":"Chin","year":"2003","journal-title":"Rev. Sci. Instrum."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"44","DOI":"10.1145\/2461912.2461928","article-title":"Femto-photography: Capturing and visualizing the propagation of light","volume":"32","author":"Velten","year":"2013","journal-title":"ACM Trans. Graph."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"11102","DOI":"10.1063\/1.4941050","article-title":"Optical time-stretch imaging: Principles and applications","volume":"3","author":"Lei","year":"2016","journal-title":"Appl. Phys. Rev."},{"key":"ref_10","first-page":"386","article-title":"El A 256 \u00d7 256 CMOS image sensor with \u0394\u03a3-based single-shot compressed sensing","volume":"55","author":"Oike","year":"2012","journal-title":"Dig. Tech. Pap. IEEE Int. Solid-State Circuits Conf."},{"key":"ref_11","doi-asserted-by":"crossref","unstructured":"Awatsuji, Y. (2017). Ultrafast 3D imaging by holography. Proc. SPIE, 10328.","DOI":"10.1117\/12.2269568"},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"17211","DOI":"10.1364\/OE.25.017211","article-title":"Implementation of a multiplexed structured illumination method to achieve snapshot multispectral imaging","volume":"25","author":"Dorozynska","year":"2017","journal-title":"Opt. Express"},{"key":"ref_13","first-page":"406","article-title":"A 16 Mfps 165kpixel backside-illuminated CCD","volume":"2011","author":"Etoh","year":"2011","journal-title":"Dig. Tech. Pap. IEEE Int. Solid-State Circuits Conf."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"3450","DOI":"10.1109\/TED.2013.2276005","article-title":"A 252-V\/lux\u00b7s, 16.7-Million-Frames-Per-Second 312-kpixel Back-Side-Illuminated Ultrahigh-Speed Charge-Coupled Device","volume":"60","author":"Arai","year":"2013","journal-title":"IEEE Trans. Electron Dev."},{"key":"ref_15","doi-asserted-by":"crossref","unstructured":"Crooks, J., Marsh, B., Turchetta, R., Taylor, K., Chan, W., Lahav, A., and Fenigstein, A. (2013). Kirana: A solid-state megapixel uCMOS image sensor for ultrahigh speed imaging. Sensors, Cameras, and Systems for Industrial and Scientific Applications XIV, Society of Photo-Optical Instrumentation Engineers (SPIE).","DOI":"10.1117\/12.2011762"},{"key":"ref_16","doi-asserted-by":"crossref","unstructured":"Janesick, J.R. (2001). Scientific Charge-Coupled Devices, SPIE Press.","DOI":"10.1117\/3.374903"},{"key":"ref_17","unstructured":"Theuwissen, A.J. (1995). Solid-State Imaging with Charge-Coupled Devices, Springer."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"1648","DOI":"10.1109\/TNS.2004.832584","article-title":"High-speed CMOS image sensor circuits with in situ frame storage","volume":"51","author":"Kleinfelder","year":"2004","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"1375","DOI":"10.1109\/JSEN.2010.2089447","article-title":"CMOS active-pixel sensor with in-situ memory for ultrahigh-speed imaging","volume":"11","author":"Marinov","year":"2011","journal-title":"IEEE Sens. J."},{"key":"ref_20","first-page":"482","article-title":"A rolling-shutter distortion-free 3D stacked image sensor with -160dB parasitic light sensitivity in-pixel storage node","volume":"56","author":"Aoki","year":"2013","journal-title":"Dig. Tech. Pap. IEEE Int. Solid-State Circuits Conf."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"329","DOI":"10.1109\/JSSC.2012.2219685","article-title":"A global-shutter CMOS image sensor with readout speed of 1-tpixel\/s burst and 780-mpixel\/s continuous","volume":"48","author":"Tochigi","year":"2013","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_22","doi-asserted-by":"crossref","unstructured":"Suzuki, M., Suzuki, M., Kuroda, R., Kumagai, Y., Chiba, A., Miura, N., Kuriyama, N., and Sugawa, S. (2016, January 3\u20137). An over 1Mfps global shutter CMOS image sensor with 480 frame storage using vertical analog memory integration. Proceedings of the 2016 IEEE International Electron Devices Meeting, San Francisco, CA, USA.","DOI":"10.1109\/IEDM.2016.7838376"},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"S1021","DOI":"10.1585\/pfr.2.S1021","article-title":"Evolution of Ultra-High-Speed CCD Imagers","volume":"2","author":"Etoh","year":"2007","journal-title":"Plasma Fusion Res."},{"key":"ref_24","unstructured":"S\u00fcss, A., Wu, L., Bacq, J.-L., Spagnolo, A., Coppejans, P., Motsnyi, V., Haspeslagh, L., Borremans, J., and Rosmeulen, M. (June, January 30). A Fully Depleted 52 \u03bcm GS CIS Pixel with 6 ns Charge Transfer, 7 e\u2013rms Read Noise, 80 \u03bcV\/e\u2013 CG and >80% VIS-QE. Proceedings of the 2017 International Image Sensor Workshop, Hiroshima, Japan."},{"key":"ref_25","doi-asserted-by":"crossref","unstructured":"Etoh, T.G., Dao, V.T.S., Shimonomura, K., Charbon, E., Zhang, C., Kamakura, Y., and Matsuoka, T. (2014, January 15\u201317). Toward 1Gfps: Evolution of ultra-high-speed image sensors -ISIS, BSI, multi-collection gates, and 3D-stacking-. Proceedings of the 2014 IEEE International Electron Devices Meeting, San Francisco, CA, USA.","DOI":"10.1109\/IEDM.2014.7047023"},{"key":"ref_26","unstructured":"Merrill, R. (2001, January 7\u20139). Intra-Pixel Reset Noise Cancellation. Proceedings of the 2001 IEEE Workshop on Charge-Coupled Devices and Advanced Image Sensors, Lake Tahoe, NV, USA."},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"155","DOI":"10.1109\/JSSC.2015.2482497","article-title":"A 160 \u00d7 120 pixel analog-counting single-photon imager with time-gating and self-referenced column-parallel A\/D conversion for fluorescence lifetime imaging","volume":"51","author":"Perenzoni","year":"2016","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_28","first-page":"C88","article-title":"A linear response single exposure CMOS image sensor with 0.5e- readout noise and 76ke- full well capacity","volume":"2015","author":"Wakashima","year":"2015","journal-title":"IEEE Symp. VLSI Circuits Dig. Techn. Pap."},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"2180","DOI":"10.1109\/JSSC.2016.2579643","article-title":"A sub-0.5 electron read noise VGA image sensor in a standard CMOS process","volume":"51","author":"Boukhayma","year":"2016","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_30","first-page":"80","article-title":"A 0.44e-rms read-noise 32fps 0.5Mpixel high-sensitivity RG-less-pixel CMOS image sensor using bootstrapping reset","volume":"60","author":"Seo","year":"2017","journal-title":"Dig. Tech. Pap. IEEE Int. Solid-State Circuits Conf."},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"449","DOI":"10.1109\/TBCAS.2011.2114660","article-title":"A CMOS In-Pixel CTIA High-Sensitivity Fluorescence Imager","volume":"5","author":"Murari","year":"2011","journal-title":"IEEE Trans. Biomed. Circuits Syst."},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"1408","DOI":"10.1109\/JSSC.2012.2192662","article-title":"A 1500 fps Highly Sensitive 256 \u00d7256 CMOS Imaging Sensor with In-Pixel Calibration","volume":"47","author":"Xu","year":"2012","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"1672","DOI":"10.1109\/JSSC.2011.2144130","article-title":"A 160\u00d7 120-Pixels Range Camera With In-Pixel Correlated Double Sampling and Fixed-Pattern Noise Correction","volume":"46","author":"Perenzoni","year":"2011","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_34","doi-asserted-by":"crossref","unstructured":"Yamashita, Y., Takahashi, H., Kikuchi, S., Ota, K., Fujita, M., Hirayama, S., Kanou, T., Hashimoto, S., Momma, G., and Inoue, S. (2011). A 300mm wafer-size CMOS image sensor with in-pixel voltage-gain amplifier and column-level differential readout circuitry. Dig. Tech. Pap. IEEE Int. Solid-State Circuits Conf., 408\u2013409.","DOI":"10.1109\/ISSCC.2011.5746373"},{"key":"ref_35","doi-asserted-by":"crossref","unstructured":"Lotto, C., Seitz, P., and Baechler, T. (2011). A sub-electron readout noise CMOS image sensor with pixel-level open-loop voltage amplification. Dig. Tech. Pap. IEEE Int. Solid-State Circuits Conf., 402\u2013403.","DOI":"10.1109\/ISSCC.2011.5746370"},{"key":"ref_36","doi-asserted-by":"crossref","first-page":"2087","DOI":"10.1109\/JSSC.2003.819162","article-title":"Discrete-Time Parametric Amplification Based on a Three-Terminal MOS Varactor: Analysis and Experimental Results","volume":"38","author":"Ranganathan","year":"2003","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_37","doi-asserted-by":"crossref","unstructured":"Wu, L., Bello, D.S.S., Coppejans, P., Craninckx, J., Wambacq, P., Borremans, J., San Segundo Bello, D., Coppejans, P., Craninckx, J., and Wambacq, P. (2016, January 7\u201310). A 20 Mfps high frame-depth CMOS burst-mode imager with low power in-pixel NMOS-only passive amplifier. Proceedings of the 31st International Congress on High-Speed Imaging and Photonics, Osaka, Japan.","DOI":"10.1117\/12.2271135"},{"key":"ref_38","doi-asserted-by":"crossref","unstructured":"Kawahito, S., and Itoh, S. (2008). Noise calculation model and analysis of high-gain readout circuits for CMOS image sensors. Sensors, Cameras, and Systems for Industrial\/Scientific Applications IX, Society of Photo-Optical Instrumentation Engineers (SPIE).","DOI":"10.1117\/12.777641"},{"key":"ref_39","doi-asserted-by":"crossref","unstructured":"Janesick, J.R. (2007). Photon Transfer: DN --> \u03bb, Society of Photo-Optical Instrumentation Engineers (SPIE).","DOI":"10.1117\/3.725073"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/18\/11\/3683\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T15:26:55Z","timestamp":1760196415000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/18\/11\/3683"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,10,30]]},"references-count":39,"journal-issue":{"issue":"11","published-online":{"date-parts":[[2018,11]]}},"alternative-id":["s18113683"],"URL":"https:\/\/doi.org\/10.3390\/s18113683","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2018,10,30]]}}}