{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,4]],"date-time":"2026-04-04T18:06:08Z","timestamp":1775325968320,"version":"3.50.1"},"reference-count":42,"publisher":"MDPI AG","issue":"11","license":[{"start":{"date-parts":[[2018,11,2]],"date-time":"2018-11-02T00:00:00Z","timestamp":1541116800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100004504","name":"Research Council of Lithuania","doi-asserted-by":"publisher","award":["S-LAT-17-3"],"award-info":[{"award-number":["S-LAT-17-3"]}],"id":[{"id":"10.13039\/501100004504","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>We demonstrate that the rectifying field effect transistor, biased to the subthreshold regime, in a large signal regime exhibits a super-linear response to the incident terahertz (THz) power. This phenomenon can be exploited in a variety of experiments which exploit a nonlinear response, such as nonlinear autocorrelation measurements, for direct assessment of intrinsic response time using a pump-probe configuration or for indirect calibration of the oscillating voltage amplitude, which is delivered to the device. For these purposes, we employ a broadband bow-tie antenna coupled Si CMOS field-effect-transistor-based THz detector (TeraFET) in a nonlinear autocorrelation experiment performed with picoseconds-scale pulsed THz radiation. We have found that, in a wide range of gate bias (above the threshold voltage      V th  = 445     mV), the detected signal follows linearly to the emitted THz power. For gate bias below the threshold voltage (at 350 mV and below), the detected signal increases in a super-linear manner. A combination of these response regimes allows for performing nonlinear autocorrelation measurements with a single device and avoiding cryogenic cooling.<\/jats:p>","DOI":"10.3390\/s18113735","type":"journal-article","created":{"date-parts":[[2018,11,5]],"date-time":"2018-11-05T04:26:39Z","timestamp":1541391999000},"page":"3735","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":18,"title":["Silicon Field Effect Transistor as the Nonlinear Detector for Terahertz Autocorellators"],"prefix":"10.3390","volume":"18","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-2165-3866","authenticated-orcid":false,"given":"K\u0119stutis","family":"Ikamas","sequence":"first","affiliation":[{"name":"Institute of Applied Electrodynamics and Telecommunications, Vilnius University, Sauletekio av. 3, LT-10257 Vilnius, Lithuania"},{"name":"The General Jonas \u017demaitis Military Academy of Lithuania, \u0160ilo str. 5A, LT-10322 Vilnius, Lithuania"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ignas","family":"Nevinskas","sequence":"additional","affiliation":[{"name":"Center For Physical Sciences And Technology, Sauletekio av. 3, LT-10257 Vilnius, Lithuania"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9562-5115","authenticated-orcid":false,"given":"Ar\u016bnas","family":"Krotkus","sequence":"additional","affiliation":[{"name":"Center For Physical Sciences And Technology, Sauletekio av. 3, LT-10257 Vilnius, Lithuania"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1610-4221","authenticated-orcid":false,"given":"Alvydas","family":"Lisauskas","sequence":"additional","affiliation":[{"name":"Institute of Applied Electrodynamics and Telecommunications, Vilnius University, Sauletekio av. 3, LT-10257 Vilnius, Lithuania"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2018,11,2]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"133508","DOI":"10.1063\/1.2357936","article-title":"Quadratic autocorrelation of free-electron laser radiation and photocurrent saturation in two-photon quantum well infrared photodetectors","volume":"89","author":"Schneider","year":"2006","journal-title":"Appl. Phys. Lett."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"124","DOI":"10.1002\/lpor.201000011","article-title":"Terahertz spectroscopy and imaging\u2014Modern techniques and applications","volume":"5","author":"Jepsen","year":"2011","journal-title":"Laser Photon. Rev."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"95","DOI":"10.1016\/j.infrared.2006.10.028","article-title":"Autocorrelation measurements of free-electron laser radiation using a two-photon QWIP","volume":"50","author":"Schneider","year":"2007","journal-title":"Infrared Phys. Technol."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"922","DOI":"10.1109\/TTHZ.2015.2482943","article-title":"THz Autocorrelators for ps Pulse Characterization Based on Schottky Diodes and Rectifying Field-Effect Transistors","volume":"5","author":"Preu","year":"2015","journal-title":"IEEE Trans. Terahertz Sci. Technol."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"021113","DOI":"10.1063\/1.4813621","article-title":"Ultrafast graphene-based broadband THz detector","volume":"103","author":"Mittendorff","year":"2013","journal-title":"Appl. Phys. Lett."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"051705","DOI":"10.1063\/1.5011392","article-title":"Field-effect transistors as electrically controllable nonlinear rectifiers for the characterization of terahertz pulses","volume":"3","author":"Lisauskas","year":"2018","journal-title":"APL Photon."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"081109","DOI":"10.1063\/1.2772783","article-title":"Coherent terahertz detection with a large-area photoconductive antenna","volume":"91","author":"Peter","year":"2007","journal-title":"Appl. Phys. Lett."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"214007","DOI":"10.1088\/0957-4484\/24\/21\/214007","article-title":"Large area photoconductive terahertz emitter for 1.55 \u03bcm excitation based on an InGaAs heterostructure","volume":"24","author":"Mittendorff","year":"2013","journal-title":"Nanotechnology"},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"12536","DOI":"10.1038\/srep12536","article-title":"High-power THz to IR emission by femtosecond laser irradiation of random 2D metallic nanostructures","volume":"5","author":"Zhang","year":"2015","journal-title":"Sci. Rep."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"036005","DOI":"10.1117\/1.JNP.10.036005","article-title":"Significant enhancement in the efficiency of photoconductive antennas using a hybrid graphene molybdenum disulphide structure","volume":"10","year":"2016","journal-title":"J. Nanophoton."},{"key":"ref_11","doi-asserted-by":"crossref","unstructured":"Lee, Y.S. (2009). Principles of Terahertz Science and Technology, Springer US.","DOI":"10.1007\/978-0-387-09540-0_5"},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"26358","DOI":"10.1364\/OE.22.026358","article-title":"20 THz broadband generation using semi-insulating GaAs interdigitated photoconductive antennas","volume":"22","author":"Hale","year":"2014","journal-title":"Opt. Express"},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"121114","DOI":"10.1063\/1.1891304","article-title":"High-intensity terahertz radiation from a microstructured large-area photoconductor","volume":"86","author":"Dreyhaupt","year":"2005","journal-title":"Appl. Phys. Lett."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"1322","DOI":"10.1063\/1.1604191","article-title":"Ultrabroadband terahertz field detection by photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs","volume":"83","author":"Liu","year":"2003","journal-title":"Appl. Phys. Lett."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"359","DOI":"10.3952\/lithjphys.49407","article-title":"Semiconductor Materials for Ultrafast Optoelectronic Applications","volume":"49","author":"Krotkus","year":"2009","journal-title":"Lith. J. Phys."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"615","DOI":"10.1109\/2944.974233","article-title":"Analytical modeling and optimization of terahertz time-domain spectroscopy experiments, using photoswitches as antennas","volume":"7","author":"Duvillaret","year":"2001","journal-title":"IEEE J. Sel. Top. Quantum Electron."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"114511","DOI":"10.1063\/1.3140611","article-title":"Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors","volume":"105","author":"Lisauskas","year":"2009","journal-title":"J. Appl. Phys."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"3834","DOI":"10.1109\/TMTT.2012.2221732","article-title":"CMOS Integrated Antenna-Coupled Field-Effect Transistors for the Detection of Radiation From 0.2 to 4.3 THz","volume":"60","author":"Boppel","year":"2012","journal-title":"IEEE Trans. Microw. Theory Tech."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"124","DOI":"10.1109\/JSEN.2012.2223668","article-title":"Subharmonic Mixing With Field-Effect Transistors: Theory and Experiment at 639 GHz High Above T","volume":"13","author":"Lisauskas","year":"2013","journal-title":"IEEE Sens. J."},{"key":"ref_20","unstructured":"\u010cibirait\u0117, D., Bauer, M., R\u00e4mer, A., Chevtchenko, S., Lisauskas, A., Matukas, J., Krozer, V., Heinrich, W., and Roskos, H.G. (September, January 27). Enhanced performance of AlGaN\/GaN HEMT-Based THz detectors at room temperature and at low temperature. Proceedings of the 42nd Intenational Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Cancun, Mexico."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"1413","DOI":"10.1109\/LED.2018.2859300","article-title":"Broadband Terahertz Power Detectors Based on 90-Nm Silicon CMOS Transistors with Flat Responsivity up to 2.2 THz","volume":"39","author":"Ikamas","year":"2018","journal-title":"IEEE Electron. Device Lett."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"380","DOI":"10.1109\/16.485650","article-title":"Detection, mixing, and frequency multiplication of terahertzradiation by two-dimensional electronic fluid","volume":"43","author":"Dyakonov","year":"1996","journal-title":"IEEE Trans. Electron. Dev."},{"key":"ref_23","first-page":"1319","article-title":"Field effect transistors for terahertz detection: Physics and first imaging applications","volume":"30","author":"Knap","year":"2009","journal-title":"J. Infrared Millim. Terahertz Waves"},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"053101","DOI":"10.1063\/1.4705986","article-title":"Detection of nanosecond-scale, high power THz pulses with a field effect transistor","volume":"83","author":"Preu","year":"2012","journal-title":"Rev. Sci. Instrum."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"164503","DOI":"10.1063\/1.4826364","article-title":"Uncooled detector challenges: Millimeter-wave and terahertz long channel field effect transistor and Schottky barrier diode detectors","volume":"114","author":"Sakhno","year":"2013","journal-title":"J. Appl. Phys."},{"key":"ref_26","doi-asserted-by":"crossref","unstructured":"Bauer, M., R\u00e4mer, A., Boppel, S., Chevtchenko, S., Lisauskas, A., Heinrich, W., Krozer, V., and Roskos, H.G. (2015, January 7\u20138). High-sensitivity wideband THz detectors based on GaN HEMTs with integrated bow-tie antennas. Proceedings of the 10th European Microwave Integrated Circuits Conference (EuMIC), Paris, France.","DOI":"10.1109\/EuMIC.2015.7345053"},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"2357","DOI":"10.1109\/16.337449","article-title":"On the universality of inversion layer mobility in Si MOSFET\u2019s: Part I\u2014Effects of substrate impurity concentration","volume":"41","author":"Takagi","year":"1994","journal-title":"IEEE Trans. Electron. Devices"},{"key":"ref_28","doi-asserted-by":"crossref","unstructured":"Carpintero, G., Garcia-Munoz, E., Hartnagel, H., Preu, S., and R\u00e4is\u00e4nen, A. (2015). Semiconductor TeraHertz Technology: Devices and Systems at Room Temperature Operation, Wiley.","DOI":"10.1002\/9781118920411"},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"380","DOI":"10.1109\/16.485650","article-title":"Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid","volume":"43","author":"Dyakonov","year":"1996","journal-title":"IEEE Trans. Electron. Devices"},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"024502","DOI":"10.1063\/1.3676211","article-title":"An improved model for non-resonant terahertz detection in field-effect transistors","volume":"111","author":"Preu","year":"2012","journal-title":"J. Appl. Phys."},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"143515","DOI":"10.1063\/1.2794772","article-title":"Analysis of plasma oscillations in high-electron mobility transistorlike structures: Distributed circuit approach","volume":"91","author":"Khmyrova","year":"2007","journal-title":"Appl. Phys. Lett."},{"key":"ref_32","doi-asserted-by":"crossref","unstructured":"Lisauskas, A., Bauer, M., Ramer, A., Ikamas, K., Matukas, J., Chevtchenko, S., Heinrich, W., Krozer, V., and Roskos, H.G. (2015, January 2\u20136). Terahertz rectification by plasmons and hot carriers in gated 2D electron gases. Proceedings of the 41st Intenational Conference on Noise and Fluctuations (ICNF), Xi\u2019an, China.","DOI":"10.1109\/ICNF.2015.7288628"},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"014508","DOI":"10.1063\/1.4732138","article-title":"Plasmonic terahertz detector response at high intensities","volume":"112","author":"Gutin","year":"2012","journal-title":"J. Appl. Phys."},{"key":"ref_34","doi-asserted-by":"crossref","first-page":"064503","DOI":"10.1063\/1.4862808","article-title":"Theory and measurement of plasmonic terahertz detector response to large signals","volume":"115","author":"Rudin","year":"2014","journal-title":"J. Appl. Phys."},{"key":"ref_35","doi-asserted-by":"crossref","first-page":"164507","DOI":"10.1063\/1.4966575","article-title":"Saturation of photoresponse to intense THz radiation in AlGaN\/GaN HEMT detector","volume":"120","author":"Dyakonova","year":"2016","journal-title":"J. Appl. Phys."},{"key":"ref_36","doi-asserted-by":"crossref","first-page":"89411E","DOI":"10.1117\/12.2044061","article-title":"THz impulse radar for biomedical sensing: nonlinear system behavior","volume":"8941","author":"Brown","year":"2014","journal-title":"Proc. SPIE"},{"key":"ref_37","doi-asserted-by":"crossref","first-page":"1795","DOI":"10.1016\/0038-1101(92)90263-C","article-title":"Unified MOSFET model","volume":"35","author":"Shur","year":"1992","journal-title":"Solid State Electron."},{"key":"ref_38","unstructured":"Franke, C. (2011). Zwei-Photonen-\u00dcberg\u00e4nge und Intersubbanddynamik in Halbleiterquantenfilmen. [Ph.D. Thesis, Technische Universit\u00e4t Dresden]."},{"key":"ref_39","unstructured":"Paschotta, R. (2018, May 04). Encyclopedia of Laser Physics and Technology\u2014Autocorrelators, Pulse Duration, Measurement. Available online: www.rp-photonics.com\/autocorrelators.html."},{"key":"ref_40","doi-asserted-by":"crossref","first-page":"273001","DOI":"10.1088\/0022-3727\/43\/27\/273001","article-title":"Semiconductors for terahertz photonics applications","volume":"43","author":"Krotkus","year":"2010","journal-title":"J. Phys. D Appl. Phys."},{"key":"ref_41","doi-asserted-by":"crossref","first-page":"763","DOI":"10.1049\/el:20040492","article-title":"High-performance terahertz electro-optic detector","volume":"40","author":"Kroll","year":"2004","journal-title":"Electron. Lett."},{"key":"ref_42","doi-asserted-by":"crossref","first-page":"291","DOI":"10.1016\/j.optcom.2007.08.042","article-title":"A method for removing etalon oscillations from THz time-domain spectra","volume":"280","author":"Naftaly","year":"2007","journal-title":"Opt. Commun."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/18\/11\/3735\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T15:27:37Z","timestamp":1760196457000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/18\/11\/3735"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,11,2]]},"references-count":42,"journal-issue":{"issue":"11","published-online":{"date-parts":[[2018,11]]}},"alternative-id":["s18113735"],"URL":"https:\/\/doi.org\/10.3390\/s18113735","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2018,11,2]]}}}