{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,27]],"date-time":"2026-04-27T12:19:33Z","timestamp":1777292373562,"version":"3.51.4"},"reference-count":33,"publisher":"MDPI AG","issue":"11","license":[{"start":{"date-parts":[[2018,11,3]],"date-time":"2018-11-03T00:00:00Z","timestamp":1541203200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100004504","name":"Lietuvos Mokslo Taryba","doi-asserted-by":"publisher","award":["LAT 04\/2016"],"award-info":[{"award-number":["LAT 04\/2016"]}],"id":[{"id":"10.13039\/501100004504","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>InGaAs-based bow-tie diodes for the terahertz (THz) range are found to be well suited for development of compact THz imaging systems. To further optimize design for sensitive and broadband THz detection, one of the major challenges remains: to understand the noise origin, influence of growth conditions and role of defects for device operation. We present a detailed study of photoreflectance, low-frequency noise characteristics and THz sensitivity of InGaAs bow-tie diodes. The diodes are fabricated from InGaAs wafers grown by molecular beam epitaxy (MBE) on semi-insulating InP substrate under different technological conditions. Photoreflectance spectra indicated the presence of strong built-in electric fields reaching up to 49 kV\/cm. It was demonstrated that the spectral density of voltage fluctuations at room temperature was found to be proportional to 1\/f, while at lower temperatures, 77\u2013200 K, Lorentzian-type spectra dominate due to random telegraph signals caused by individual capture defects. Furthermore, varying bias voltage, we considered optimal conditions for device room temperature operation in the THz range with respect to signal-to-noise ratio. The THz detectors grown with beam equivalent pressure In\/Ga ratio equal to 2.04 exhibit the minimal level of the low-frequency noise, while InGaAs layers grown with beam equivalent pressure In\/Ga ratio equal to 2.06 are found to be well suited for fabrication of room temperature bow-tie THz detectors enabling sensitivity of 13 V\/W and noise equivalent power (NEP) of 200 pW\/\u221aHz at 0.6 THz due to strong built-in electric field effects.<\/jats:p>","DOI":"10.3390\/s18113760","type":"journal-article","created":{"date-parts":[[2018,11,5]],"date-time":"2018-11-05T10:43:45Z","timestamp":1541414625000},"page":"3760","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":11,"title":["InGaAs Diodes for Terahertz Sensing\u2014Effect of Molecular Beam Epitaxy Growth Conditions"],"prefix":"10.3390","volume":"18","author":[{"given":"Vilius","family":"Palenskis","sequence":"first","affiliation":[{"name":"Institute of Applied Electrodynamics and Telecommunications, Physics Faculty, Vilnius University, Sauletekio ave. 3, 10257 Vilnius, Lithuania"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Linas","family":"Minkevi\u010dius","sequence":"additional","affiliation":[{"name":"Department of Optoelectronics, Center for Physical Sciences and Technology, Savanoriu ave. 231, 02300 Vilnius, Lithuania"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jonas","family":"Matukas","sequence":"additional","affiliation":[{"name":"Institute of Applied Electrodynamics and Telecommunications, Physics Faculty, Vilnius University, Sauletekio ave. 3, 10257 Vilnius, Lithuania"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5373-373X","authenticated-orcid":false,"given":"Domas","family":"Jokubauskis","sequence":"additional","affiliation":[{"name":"Department of Optoelectronics, Center for Physical Sciences and Technology, Savanoriu ave. 231, 02300 Vilnius, Lithuania"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Sandra","family":"Pralgauskait\u0117","sequence":"additional","affiliation":[{"name":"Institute of Applied Electrodynamics and Telecommunications, Physics Faculty, Vilnius University, Sauletekio ave. 3, 10257 Vilnius, Lithuania"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Dalius","family":"Seliuta","sequence":"additional","affiliation":[{"name":"Department of Optoelectronics, Center for Physical Sciences and Technology, Savanoriu ave. 231, 02300 Vilnius, Lithuania"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7119-7213","authenticated-orcid":false,"given":"Bronislovas","family":"\u010cechavi\u010dius","sequence":"additional","affiliation":[{"name":"Department of Optoelectronics, Center for Physical Sciences and Technology, Savanoriu ave. 231, 02300 Vilnius, Lithuania"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1682-056X","authenticated-orcid":false,"given":"Renata","family":"Butkut\u0117","sequence":"additional","affiliation":[{"name":"Department of Optoelectronics, Center for Physical Sciences and Technology, Savanoriu ave. 231, 02300 Vilnius, Lithuania"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Gintaras","family":"Valu\u0161is","sequence":"additional","affiliation":[{"name":"Department of Optoelectronics, Center for Physical Sciences and Technology, Savanoriu ave. 231, 02300 Vilnius, Lithuania"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2018,11,3]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"3913","DOI":"10.1063\/1.1579565","article-title":"Ion-implanted InGaAs for ultrafast optoelectronic applications","volume":"82","author":"Carmody","year":"2003","journal-title":"Appl. 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