{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T04:05:05Z","timestamp":1760241905426,"version":"build-2065373602"},"reference-count":27,"publisher":"MDPI AG","issue":"11","license":[{"start":{"date-parts":[[2018,11,3]],"date-time":"2018-11-03T00:00:00Z","timestamp":1541203200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Silicon photomultipliers (SiPMs) have improved significantly over the last years and now are widely employed in many different applications. However, the custom fabrication technologies exploited for commercial SiPMs do not allow the integration of any additional electronics, e.g., on-chip readout and analog (or digital) processing circuitry. In this paper, we present the design and characterization of two microelectronics-compatible SiPMs fabricated in a 0.16 \u00b5m\u2013BCD (Bipolar-CMOS-DMOS) technology, with 0.67 mm \u00d7 0.67 mm total area, 10 \u00d7 10 square pixels and 53% fill-factor (FF). The photon detection efficiency (PDE) surpasses 33% (FF included), with a dark-count rate (DCR) of 330 kcps. Although DCR density is worse than that of state-of-the-art SiPMs, the proposed fabrication technology enables the development of cost-effective systems-on-chip (SoC) based on SiPM detectors. Furthermore, correlated noise components, i.e., afterpulsing and optical crosstalk, and photon timing response are comparable to those of best-in-class commercial SiPMs.<\/jats:p>","DOI":"10.3390\/s18113763","type":"journal-article","created":{"date-parts":[[2018,11,5]],"date-time":"2018-11-05T10:43:45Z","timestamp":1541414625000},"page":"3763","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":7,"title":["0.16 \u00b5m\u2013BCD Silicon Photomultipliers with Sharp Timing Response and Reduced Correlated Noise"],"prefix":"10.3390","volume":"18","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-7522-9959","authenticated-orcid":false,"given":"Mirko","family":"Sanzaro","sequence":"first","affiliation":[{"name":"Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, I-20133 Milan, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Fabio","family":"Signorelli","sequence":"additional","affiliation":[{"name":"Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, I-20133 Milan, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Paolo","family":"Gattari","sequence":"additional","affiliation":[{"name":"Technology R&amp;D, STMicroelectronics, I-20041 Agrate Brianza, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Alberto","family":"Tosi","sequence":"additional","affiliation":[{"name":"Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, I-20133 Milan, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1715-501X","authenticated-orcid":false,"given":"Franco","family":"Zappa","sequence":"additional","affiliation":[{"name":"Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, I-20133 Milan, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2018,11,3]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"103","DOI":"10.1016\/j.sna.2007.06.021","article-title":"Principles and features of single-photon avalanche diode arrays","volume":"140","author":"Zappa","year":"2007","journal-title":"Sens. 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