{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,1]],"date-time":"2026-05-01T09:16:26Z","timestamp":1777626986528,"version":"3.51.4"},"reference-count":44,"publisher":"MDPI AG","issue":"11","license":[{"start":{"date-parts":[[2018,11,14]],"date-time":"2018-11-14T00:00:00Z","timestamp":1542153600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["11704055"],"award-info":[{"award-number":["11704055"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Dalian High-level Talents Innovation Supporting Program","award":["2017RQ073"],"award-info":[{"award-number":["2017RQ073"]}]},{"name":"Liaoning Natural Science Foundation","award":["20180510021"],"award-info":[{"award-number":["20180510021"]}]},{"DOI":"10.13039\/501100012226","name":"Fundamental Research Funds for the Central Universities","doi-asserted-by":"publisher","award":["3132016320, 3132016347 and 3132017079"],"award-info":[{"award-number":["3132016320, 3132016347 and 3132017079"]}],"id":[{"id":"10.13039\/501100012226","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>The influence of oxygen vacancy behaviors during a cooling process in semiconductor gas sensors is discussed by the numerical analysis method based on the gradient-distributed oxygen vacancy model. A diffusion equation is established to describe the behaviors of oxygen vacancies, which follows the effects of diffusion and exclusion in the cooling process. Numerical analysis is introduced to find the accurate solutions of the diffusion equation. The solutions illustrate the oxygen vacancy distribution profiles, which are dependent on the cooling rate as well as the temperature interval of the cooling process. The gas-sensing characteristics of reduced resistance and response are calculated. Both of them, together with oxygen vacancy distribution, show the grain size effects and the re-annealing effect. It is found that the properties of gas sensors can be controlled or adjusted by the designed cooling process. The proposed model provides a possibility for sensor characteristics simulations, which may be beneficial for the design of gas sensors. A quantitative interpretation on the gas-sensing mechanism of semiconductors has been contributed.<\/jats:p>","DOI":"10.3390\/s18113929","type":"journal-article","created":{"date-parts":[[2018,11,14]],"date-time":"2018-11-14T10:58:22Z","timestamp":1542193102000},"page":"3929","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":15,"title":["Influence of Oxygen Vacancy Behaviors in Cooling Process on Semiconductor Gas Sensors: A Numerical Analysis"],"prefix":"10.3390","volume":"18","author":[{"given":"Jianqiao","family":"Liu","sequence":"first","affiliation":[{"name":"College of Information Science and Technology, Dalian Maritime University, Dalian 116026, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wanqiu","family":"Wang","sequence":"additional","affiliation":[{"name":"College of Information Science and Technology, Dalian Maritime University, Dalian 116026, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhaoxia","family":"Zhai","sequence":"additional","affiliation":[{"name":"College of Information Science and Technology, Dalian Maritime University, Dalian 116026, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Guohua","family":"Jin","sequence":"additional","affiliation":[{"name":"College of Information Science and Technology, Dalian Maritime University, Dalian 116026, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yuzhen","family":"Chen","sequence":"additional","affiliation":[{"name":"Department of Material Science and Engineering, Dalian Maritime University, Dalian 116026, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wusong","family":"Hong","sequence":"additional","affiliation":[{"name":"College of Information Science and Technology, Dalian Maritime University, Dalian 116026, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Liting","family":"Wu","sequence":"additional","affiliation":[{"name":"College of Information Science and Technology, Dalian Maritime University, Dalian 116026, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Fengjiao","family":"Gao","sequence":"additional","affiliation":[{"name":"College of Information Science and Technology, Dalian Maritime University, Dalian 116026, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2018,11,14]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"1502","DOI":"10.1021\/ac60191a001","article-title":"A new detector for gaseous components using semiconductive thin films","volume":"34","author":"Seiyama","year":"1962","journal-title":"Anal. 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